ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
A brief survey is given of some recent progress regarding ion implantation processingand related effects in 4H- and 6H-SiC. Four topics are discussed; an empirical ion range distributionsimulator, dynamic defect annealing during implantation, formation of highly p+-doped layers, anddeactivation of N donors by ion-induced defects
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.781.pdf
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