ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The boron diffusion in three kinds of group IV semiconductors: silicon, silicon carbideand synthetic diamond has been studied by secondary ion mass spectrometry. Ion implantation of300 keV, 11B-ions to a dose of 21014 cm-2 has been performed. The samples are subsequentlyannealed at temperatures ranging from 800 to 1650 °C for 5 minutes up to 8 hours. In silicon andsilicon carbide, the boron diffusion is attributed to a transient process and the level of out-diffusionis correlated to intrinsic carrier concentration. No transient, out-diffused, boron tail is revealed indiamond at these temperatures
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.453.pdf
Permalink