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  • 1
    Electronic Resource
    Electronic Resource
    Grain growth in laser dehydrogenated and crystallized polycrystalline silicon for thin film transistors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3194-3199 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective dehydrogenation and crystallization are realized by a three-step incremental increase in laser energy density. X-ray diffraction and transmission electron microscopy show that the polycrystalline grains formed with this three-step process are similar to those after a conventional one-step laser crystallization of unhydrogenated amorphous silicon. The grain size increases with increasing laser energy density up to a peak value of a few micrometers. The grain size decreases with further increases in laser energy density. The transistor field effect mobility is correlated to the material properties, increasing gradually with laser energy density until reaching its maximum value. Thereafter, the transistors suffer from leakage through the gate insulators. A dual dielectric gate insulator has been developed for these bottom-gate thin film transistors. Our structure simplifies fabrication of both high quality amorphous and polycrystalline thin film transistors on the same glass substrate. We discuss the application of this process for producing hybrid amorphous and polycrystalline silicon thin film transistors from hydrogenated amorphous silicon on glass substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357505
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  • 2
    Electronic Resource
    Electronic Resource
    Luminescence quantum yield of molecular aggregates and excitons in α-sexithienyl thin films at variable temperature (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5158-5165 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy transport and photoluminescence quantum yield in vacuum sublimed thin films of the α-sexithienyl (T6) model system, are investigated as a function of temperature in the range 30–300 K. The emission from the intrinsic bulk excitons and from the molecular aggregate states, is identified in the photoluminescence spectrum at each temperature. The corresponding absolute quantum yield of photoluminescence is measured with a home-built experimental apparatus based on an integrating sphere, which allows photoluminescence and electroluminescence quantum yield measurements in the temperature range 5–400 K. The photoluminescence quantum yield of the molecular aggregates placed below the exciton band span from 0.1% to 5% in the temperature range 300–30 K. In the same temperature range, the quantum efficiency of the intrinsic excitons increases by a factor of 2 from 0.4% to 1%. Therefore, in organic thin films both the spectral and quantum yield properties depend on the relative concentration of molecular aggregates formed during the growth process. We reconcile in this way the wealth of photoluminescence spectra and quantum yield values reported in the literature for T6 films grown under different conditions and with different thickness, i.e., containing different concentration of aggregate states. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1314305
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  • 3
    Electronic Resource
    Electronic Resource
    Study of interdiffusion in a Te-doped AlAs-GaAs superlattice (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2165-2167 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The enhanced layer interdiffusion in Te-doped AlAs/GaAs superlattices has been studied by secondary ion mass spectrometry. The superlattice sample was grown by organometallic chemical vapor deposition with Te doping at concentrations of 2×1017–3×1018 cm−3 during the growth process. In the temperature range from 800 to 1000 °C, the Al diffusion coefficient has an activation energy of 3.0 eV and is approximately proportional to the Te concentration. These results contrast sharply with Si-induced mixing which, in an analogous experiment, yielded an activation energy of 4.1 eV for the Al diffusion coefficient with a high power law dependence on the Si concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342848
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  • 4
    Electronic Resource
    Electronic Resource
    Structural study of tin and carbon coimplanted silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8417-8419 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The alloy system Six(SnyC1−y)1−x was investigated. The purpose is to form material with reduced strain at silicon heterojunctions. In this work, samples were prepared by coimplantation of tin and carbon ions into silicon wafers within the dosage range 1015–1016 cm−2, followed by rapid thermal annealing. Rutherford backscattering and channeling, Auger sputter profiling, and secondary-ion-mass spectrometry were employed to study the crystallinity, chemical composition, and depth profiles. A near-perfect crystallinity for 0.5 at. % of tin and carbon was achieved. For high-dose implanted samples, tin segregation was observed. This work demonstrates promising features of group-IV semiconductor synthesis by ion implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347410
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  • 5
    Electronic Resource
    Electronic Resource
    Picosecond photoconductive response of polycrystalline silicon thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 64-66 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using autocorrelation measurement, we have studied the picosecond photoconductivity of as-deposited, fine-grain polycrystalline silicon thin films. A strong correlation between photoconductive decay time and polycrystalline silicon deposition temperature has been observed. The fastest autocorrelated photoconductive response is 9 ps full width at half maximum, and is obtained from a polycrystalline silicon sample deposited at 590 °C. We estimated the carrier mobility from the peak autocorrelated current, as well as from the average photocurrent of a single gap. These two values show a large difference for samples deposited at relatively high temperatures, which can be explained by imperfect metal-semiconductor ohmic contacts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103579
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical and structural properties of shallow p+ junctions formed by dual (Ga/B) ion implantation (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1362-1364 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrashallow p+ junctions formed by dual implanation of Ga and B with low-temperature rapid thermal anneal (RTA) are reported. The electrical and structural properties of the shallow junction were studied by sheet resistance and diode reverse recovery measurements, Rutherford backscattering channeling, and secondary-ion mass spectrometry. A junction of 400 A(ring) depth (full width at half maximum) and an average carrier concentration of 3×1019 cm−3 were realized with RTA at 600 °C. It is shown that there is excess damage in the dual-implanted junctions which affects the minority-carrier lifetime.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102515
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  • 7
    Electronic Resource
    Electronic Resource
    Comparative studies of ion-induced mixing of GaAs-AlAs superlattices (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1487-1489 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The species dependence of ion-induced superlattice mixing has been examined in AlAs-GaAs superlattice samples grown by molecular beam epitaxy. The interdiffusion of the superlattices induced by ion implantation with comparable ranges, doses, and subsequent thermal anneals were measured with secondary ion mass spectrometry. The effects of elements of comparable mass (Ga, As, and Ge) and comparable valence (Si and Ge) were studied. The experimental results show that Ga and As implantation cause primarily collision-induced mixing, while Ge implantation results in collision-induced mixing with additional impurity-induced mixing beyond the implant range. In comparison with Ge, Si-induced mixing is similar in nature though there is significant difference in the depth and extent of the mixing. The extent of mixing is found to depend on the local Ge or Si concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99107
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  • 8
    Electronic Resource
    Electronic Resource
    Conversion of InP/In0.53Ga0.47As superlattices to Zn3P2/In1−xGaxAs and Zn3P2/Zn3As2 superlattices by Zn diffusion (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1160-1162 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A standard 600 °C closed-tube Zn diffusion into an unstrained InP/In0.53Ga0.47As superlattice was found to produce new superlattices containing Zn3P2 layers, and in some cases Zn3As2 layers. Crystalline properties and diffusion profiles were examined by transmission electron microscopy and secondary-ion mass spectrometry. Initial doping of Zn enhances the diffusion of In and Ga and results in a superlattice of uniform In and Ga distribution. Upon further infusion of Zn, Zn3P2 forms selectively in the phosphorus layers and propagates from the surface while maintaining an atomically abrupt Zn3P2/In1−xGaxP interface. Zn3As2 conversion is also observed to occur under sufficiently stringent conditions. Diffusion of P and As was not observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101480
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  • 9
    Electronic Resource
    Electronic Resource
    Mixing inhibition and crystalline defects in heavily Si-doped AlAs/GaAs superlattices (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2650-2652 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superlattice mixing in heavily silicon-doped AlAs/GaAs superlattices has been examined by secondary-ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM). Samples were grown by molecular beam epitaxy with Si concentrations of 1018 to 1020 cm−3 introduced during the growth process. Interdiffusion of Al was inhibited at a Si concentration of 1020 cm−3. Defect clusters and prismatic dislocation loops were found to be associated with Si concentrations of 1020 and 1019 cm−3, respectively. Si was observed by SIMS to segregate preferentially into the GaAs layers and TEM observation revealed defect formation in these same layers during the diffusion process, suggesting a strong correlation between Si segregation and defect formation. In the range of Si concentrations employed, the Al diffusion coefficient is found to vary as the third power of the estimated electron concentration, consistent with our previous results at lower concentrations. These results suggest that the diffusion inhibition at high Si concentrations may arise from the trapping of mobile Si species by defects with a consequent reduction of the carrier concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100183
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  • 10
    Electronic Resource
    Electronic Resource
    InGaAs/InP superlattice mixing induced by Zn or Si diffusion (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1051-1053 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent studies have shown that Zn diffusion preferentially induces mixing (interdiffusion) of In and Ga in unstrained InGaAs/InP superlattices, with little diffusion of the anions. In the present study, a 3.1% lattice mismatch is accommodated in the mixed superlattice with no observable defects in layers on the order of the predicted critical layer thickness. At high concentrations, Zn resides preferentially in the InP layers in the form of Zn3P2. In marked contrast to this behavior of Zn, Si diffusion is observed to cause comparable interdiffusion on the cation and anion sublattices within a narrow range of dopant concentration. This result is at odds with some recent mixing models and is consistent with a divacancy mixing mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100406
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