Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
82 (1997), S. 1423-1426
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Deep levels in polycrystalline n-CdS/p-CdTe photovoltaic structures have been studied by deep level transient spectroscopy (DLTS). The results were obtained from cells which have undergone different post-deposition treatment (as-deposited, heat treated, and heat treated in the presence of CdCl2). The DLTS results showed a deep level distribution independent of the post-deposition treatment. For all samples the spectra were dominated by a hole trap, localized atEV+0.48 eV. Metastable hole and electron traps were also observed, mainly in the heat treated (with and without aCdCl2 layer) devices. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.366285
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