Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
76 (1994), S. 2181-2184
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
PtSi film epitaxial orientation and morphology depend greatly on the Si(001) substrate temperature during Pt deposition. 15 nm Pt films were evaporated on the heated substrate in room-temperature to the 1100 K range. The PtSi on the Si substrate forms a continuous film below 850 K and forms islands at above 920 K. In the entire heated range, except for around 1000 K, the dominant epitaxial orientation is PtSi(11¯0)||||Si(001) (A orientation). At around 1000 K, the dominant orientation is PtSi(12¯1)||||Si(001) (called B orientation). In the range from 920 to 950 K, B orientation grains partially exist in the predominant A orientation. Below 1000 K, the predominant factor governing the epitaxial orientation is area mismatch, which is the difference between the PtSi and Si superlattice areas at the interface. The predominantly A-oriented grains observed at above 1050 K can be explained by the superlattice area mismatch concept.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357631
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