Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
59 (1986), S. 2998-3001
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
By studying the step coverage of plasma-deposited amorphous silicon and germanium on patterned substrates, we find that the film formation process under device-quality deposition conditions has a substantial component that behaves like a surface rate-limited chemical vapor deposition process, while conditions producing defective material are associated with a much more physical-vapor-deposition-like process. An explanation involving surface reactions of SiHx radicals is proposed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.336920
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