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  • 1
    Electronic Resource
    Electronic Resource
    n-type ion implantation doping of AlxGa1−xAs (0≤x≤0.7) (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2132-2137 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si-implant activation characteristics in AlxGa1−xAs for Al compositions of 0%–70% AlAs are presented for doses of 5.6×1012 and 2.8×1013 cm−2 at 100 keV. For both doses, the effective activation efficiency (ηeff) is relatively constant from 0% to 20% AlAs (ηeff=64% for 5.6×1012 cm−2 and 37% for 2.8×1013 cm−2 for 20% AlAs), goes through a minimum at 35% AlAs (ηeff=6.6% for 5.6×1012 cm−2 and 2.5% for 2.8×1013 cm−2), and then increases towards 70% AlAs (ηeff=52.8% for 5.6×1012 cm−2 and 31.1% for 2.8×1013 cm−2). The results are explained based on the compositional dependence of the ionization energy and conduction band density-of-states of AlGaAs. The effects of P coimplantation is also studied but demonstrates no significant enhancement of the activation efficiency of Si implantation for 0%–70% AlAs. Finally, data are presented for Se implantation in Al0.2Ga0.8As with a maximum effective activation efficiency of 5.6% achieved. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363556
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  • 2
    Electronic Resource
    Electronic Resource
    p-type ion-implantation doping of Al0.75Ga0.25Sb with Be, C, Mg, and Zn (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1365-1370 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-type ion-implantation doping of Al0.75Ga0.25Sb is reported. The surface morphology and electrical properties of Al0.75Ga0.25Sb are shown by atomic force microscopy and Hall measurements to be degraded after rapid thermal annealing of 650 °C. Implantation of Be and Mg results in sheet hole concentrations twice that of the implanted acceptor dose of 1×1013 cm−2 following a 600 °C anneal. This is explained in terms of double acceptor or antisite defect formation. Implanted C acts as an acceptor but also demonstrates excess hole conduction attributed to implantation-induced defects. Implanted Zn requires higher annealing temperatures than Be and Mg to achieve 100% effective activation for a dose of 1×1013 cm−2 probably as a result of more implantation-induced damage created from the heavier Zn ion. Secondary ion mass spectroscopy of as-implanted and annealed Be, Mg, and C samples are presented. Diffusion of implanted Be (5×1013 cm−2, 45 keV) is shown to have an inverse dependence on temperature that is attributed to a substitutional-interstitial diffusion mechanism. Implanted Mg (1×1014 cm−2, 110 keV) shows dramatic redistribution and loss at the surface of up to 56% after a 600 °C anneal. Implanted C (2.5×1014 cm−2, 70 keV) displays no redistribution even after a 650 °C anneal. This work lays the foundation for using ion-implantation doping in high performance AlGaSb/InGaSb-based p-channel field-effect transistors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361034
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  • 3
    Electronic Resource
    Electronic Resource
    Determination of energy-band dispersion curves in strained-layer structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2227-2229 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simultaneous measurement of both the conduction- and valence-band dispersion curves in single strained-layer structures is presented. These measurements rely on the application of recent observations regarding breaking of the usual selection rules for interband magnetoluminescence transitions in modulation-doped structures. Low-temperature magneto-luminescence data for three representative InGaAs/GaAs n-type single-strained quantum well structures are presented. For energies approaching 50 meV above the band gap, we find that the conduction band is parabolic with an effective mass of 0.071m0. Over the same energy range, the valence bands are highly nonparabolic.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101367
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  • 4
    Electronic Resource
    Electronic Resource
    Unintentional indium incorporation in GaAs grown by molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2321-2323 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have quantified unintentional indium incorporation in GaAs grown by molecular beam epitaxy in a variety of commercial systems. We find that the unintentional indium density in the epitaxial GaAs is more a function of mounting technique and prior machine history than of the manufacturer's design. The indium densities detected in the epitaxial GaAs for substrates that only partially obscure an indium-bearing mount are equal to levels reported to result in minimum defect densities and narrowest photoluminescence linewidths in In-doped GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103881
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  • 5
    Electronic Resource
    Electronic Resource
    Role of substrate threading dislocation density in relaxation of highly strained InGaAs/GaAs quantum well structures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1350-1352 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structures with highly strained InGaAs/GaAs single quantum wells have been grown on GaAs substrates with KOH etch pit densities from ∼1000 to ∼45 000 cm−2. These structures were characterized by photoluminescence microscopy and 77 K Hall measurements to determine the extent to which the substrate threading dislocation density affects the misfit dislocation density at the quantum well interfaces. For well thicknesses near or below the Matthews–Blakeslee critical thickness, similar results are obtained for substrates of different dislocation density. However, for metastable structures significantly above the critical thickness, the misfit dislocation density is a sensitive function of the substrate quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102511
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  • 6
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxy of AlAs0.16Sb0.84 and Al0.8Ga0.2As0.14Sb0.86 on InAs substrates (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1242-1244 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial films of AlAs0.16Sb0.84 and Al0.8Ga0.2As0.14Sb0.86 were grown lattice matched on (100) InAs substrates by molecular beam epitaxy. The material was characterized by x-ray diffraction, 4 K photoluminescence, and capacitance-voltage measurement techniques. At 300 K, background acceptor concentrations of 1.8×1015 and 1.4×1016 cm−3 were determined for the unintentionally doped AlAsSb and AlGaAsSb epitaxial layers, respectively. Compensating the AlAsSb and AlGaAsSb epitaxial layers with sulfur doping resulted in high-resistivity material with an effective donor concentration of about 1014 and 1015 cm−3, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102526
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  • 7
    Electronic Resource
    Electronic Resource
    On-line determination of alloy composition during ternary III/V molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 777-779 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a simple, new method for deducing surface alloy composition during ternary III/V molecular beam epitaxy. The method is based on on-line reflection mass spectrometry of the group V flux "reflected'' from the surface during momentary terminations of individual group III fluxes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101804
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  • 8
    Electronic Resource
    Electronic Resource
    Anisotropic thermionic emission of electrons contained in GaAs/AlAs floating gate device structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1226-1228 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermionic emission rates are reported for electrons in GaAs epilayers, where electrostatic barriers within the layers and GaAs/AlAs heterojunctions form different sides of the potential well. Attempt times at the two barrier types were observed to differ by factors above 107 due to differing constraints on momentum conservation during emission. These emissions represent escape mechanisms for charge stored in a closed geometry, III-V compound floating gate transistor, with potential application as dynamic random access or nonvolatile memories.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101662
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  • 9
    Electronic Resource
    Electronic Resource
    Electron/hole energy shifts in narrow GaAs/AlAs quantum wells: Inhomogeneous broadening due to half-monolayer well-width fluctuations (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1404-1406 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use absorption, photoluminescence, and x-ray diffraction spectra of two GaAs/AlAs type II heterostructures, whose GaAs well thicknesses differ by (approximately-equal-to)4 A(ring) to obtain a direct measurement of the individual quantum confinement energy shifts of the heavy hole, light hole, and electron levels. We find that excitonic absorption linewidths are dominated by inhomogeneous broadening that arises from half-monolayer well-thickness fluctuations. For self-consistency these shifts are applied to separately determine the individual valence-band and conduction-band offsets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103448
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  • 10
    Electronic Resource
    Electronic Resource
    Characterization of thin AlGaAs/InGaAs/GaAs quantum-well structures bonded directly to SiO2/Si and glass substrates (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 459-462 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained GaAs/InGaAs/AlGaAs quantum-well structures grown on GaAs have been removed from their original substrates by a lift-off process and bonded directly to glass or SiO2-coated Si substrates. Both undoped and modulation-doped structures have been characterized before and after transfer by Hall measurements, variable temperature x-ray diffraction, and photoluminescence. The bonded structures retain the high quality of the as-grown layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343850
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