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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 6 (1987), S. 977-978 
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 31 (1966), S. 597-599 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of medicinal chemistry 10 (1967), S. 1166-1167 
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4077-4079 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements were carried out in order to investigate the dependence of the optical properties of p-Cd0.96Zn0.04Te single crystals on hydrogen passivation conditions. After the p-Cd0.96Zn0.04Te was annealed at 500 °C in a Cd atmosphere for 5 h, the luminescence due to the recombination of the electrons in the conduction band with acceptors (eA°) and to the donor–acceptor pair (DAP) transitions disappeared. After the p-Cd0.96Zn0.04Te was hydrogenated, the intensity of the exciton luminescence increased so that the (eA°) and DAP peaks related to the Cd vacancies disappeared, and the defect band in the low energy range between 1.4 and 1.5 eV also vanished. These results indicate that hydrogen atoms passivated not only shallow donors but also deep acceptor impurities and that the hydrogen atoms were separated from the hydrogenated samples at 400 °C due to their thermal energy.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2774-2780 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth and morphology of intermetallic compounds between the solder and substrate play an important role in the solderability and reliability of electronic solder joints. Solder on thin films, as in chip joint, acts as an electrical and mechanical/physical interconnection between the chip and the substrate. We have studied the interfacial reactions between eutectic SnPb (63Sn37Pb, wt%) and Cr/Cu/Au thin films. Our results found here have been compared to the solder reaction on bulk Cu. The eutectic solder has 7° of wetting angle on Cr/Cu/Au thin films rather than 11° on Cu substrate. Sideband around the solder cap was found in both the thin film case and the Cu case. Spalling of Cu6Sn5 compound grains occurred in the thin-film case when the Cu film was consumed but not in the case of bulk Cu. We observed a shape change from hemispherical "scallops'' to spheroids before spalling took place. The shape change is assisted by ripening a reaction among the scallops. We have calculated a critical size of the scallop, depending on the Cu film thickness, when the shape change or spalling starts. © 1996 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3497-3504 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of isoelectronic doping of GaAs by In or Sb on the electron deep levels in n-GaAs grown by molecular-beam epitaxy have been investigated in the growth temperature range 500–600 °C for Si doping levels of 4–7×1016 cm−3 and As-stabilized conditions. The two dominant traps M3 and M6 are drastically reduced in concentration by up to three orders of magnitude for M3 (from 1015 cm−3 down to 〈1012 cm−3) and two and a half orders of magnitude for M6 by introducing 0.2–1 at.% In or Sb and increasing growth temperatures from 500 to 550 °C. The trap concentrations of M3 and M6 were also significantly reduced by increasing the growth temperature to 600 °C without In or Sb doping and by decreasing the growth rate from 1.0 to 0.3 μm/h. The incorporation coefficients of In and Sb have been measured and are found to decrease with increasing growth temperature. The growths with high M3 and M6 trap densities are shown to have short minority-carrier diffusion lengths. Indium isoelectronic doping, which is presumed to take place on a gallium sublattice site, and Sb doping, which is expected to take place on an arsenic sublattice site, appear to have rather similar effects in suppressing the concentration of the M3 and M6 electron traps. This suggest that both of these traps are in some way related to (VAsVGa) complexes or (VAsXVGa) complexes where X is different for M3 and M6 and might be interstitial or impurity related.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 408-410 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric PbTiO3 thin films have been prepared by a low-pressure MOCVD process. Epitaxial films with a crystal structure of a bulk equilibrium tetragonal phase were readily obtained within a range of growth conditions. However, by providing excess Pb in the growth process, we have observed an epitaxy-induced phase for near-stoichiometry PbTiO3 which possesses a perovskite-like, but possible, orthorhombic structure.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3174-3176 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conditions for deposition of Cu and Cu-oxide thin films by reactive dc sputtering have been investigated by characterizing the crystal structure of growing films both during and immediately following deposition using an in situ x-ray diffraction technique. The relationship between sputtering conditions and the phases deposited was established for a variety of conditions. At each temperature studied, increasing the oxygen pressure in the system resulted in a systematic change in the phases deposited. Of significant importance was the identification of temperature-pressure regimes in which CuO was stable during deposition but reverted to Cu2O after the sputtering plasma was extinguished, suggesting a shift in the oxidizing potential in the plasma environment. These results also suggest that the in situ analysis technique may be ideally suited for the investigation of phase relationships and phase diagrams in other systems.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2337-2339 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used scanning electron microscopy to study the interfacial morphology of the Cu-Sn compounds formed between a eutectic SnPb alloy and Cu at 200 °C. A selective etching reveals the three-dimensional morphology of the Cu-Sn compounds. On the solder side, the compounds grow rapidly as big scallops and the interface becomes extremely rough as compared to the Cu side of the interface. In order to understand this rapid and extremely irregular growth of the Cu-Sn compounds, we propose that it is caused by the dissolution of Cu into the liquid solder and the coarsening of the scallop-type compounds by Ostwald ripening. The growth of the Cu-Sn compounds has a serious impact on solder joint rework in electronic packaging. © 1995 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2002-2004 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: What is the rate of consumption of Cu in soldering reactions has been a critical question in electronic packaging technology. The Cu films are consumed by Cu–Sn compound formation. Because the Cu thickness is limited and the rework of a solder joint requires a layer of unreacted Cu, the loss of Cu in soldering must be under control. At the solder interface, Cu–Sn intermetallic compounds do not form layered structures. Rather, the Cu6Sn5 phase grows as scalloplike grains into the molten solder and ripening occurs between the grains. Therefore, it has been difficult to determine the compound growth rate, and in turn the Cu consumption rate. Using cross-sectional and top-polished samples, we have measured the total volume of Cu–Sn intermetallic compounds formed between eutectic SnPb alloy and Cu substrate as a function of reflow time and temperature. We have deduced that after 1 min reflow, for example, the thickness of Cu consumed was about 0.36, 0.47, and 0.69 μm at 200, 220, and 240 °C, respectively. © 1995 American Institute of Physics.
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