ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Transparent indium-doped ZnO (IZO) films with low In content (〈6at%) were fabricatedthrough radio-frequency (rf) helicon magnetron sputtering. Formation of In-Zn-O solid solution wasconfirmed by X-ray diffraction (XRD) patterns. Incorporation of indium into ZnO films enhances theoptical transmission in the visible wavelength. The optical band-gaps slightly increase from 3.25eV(ZnO) to 3.28eV (In0.04Zn0.96O) and to 3.30eV (In0.06Zn0.94O) due to Burstain-Moss effect. TheUrbach tail parameter E0, which is believed to be a function of structural disorder, increases from79meV (ZnO), to 146meV (In0.04Zn0.96O), and to 173meV (In0.06Zn0.94O), which is consistent withincrease of Full-Width Half-Maximum (FWHM) in corresponding XRD patterns. Decreasing incrystal quality with increasing indium concentration is also confirmed by photoluminescence spectra
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/39/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.11-12.159.pdf
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