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  • 1
    Electronic Resource
    Electronic Resource
    Anisotropy induced by the bowed-substrate sputtering technique in positive/negative magnetostriction FeB/CoSiB bilayers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4809-4811 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CoSiB and FeB single layers and CoSiB/FeB bilayers with thicknesses ranging from 250 to 1500 Å were grown on bowed glass substrates using rf sputtering. A magnetoelastic anisotropy was induced in the magnetic layers after removing the films from the sputtering chamber. The positive (FeB) and the negative (CoSiB) magnetostrictive single layers showed an easy magnetization axis transverse and parallel to the compression axis, respectively. The magnetic behavior of the CoSiB/FeB bilayers is shown to be extremely sensitive to the thickness of each layer, to their thickness ratios, and also to the deposition sequence of the layers on the substrate. These results are discussed in terms of the interactions between two magnetic phases with easy magnetization axes transverse to each other. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370489
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetic behavior of an array of cobalt nanowires (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5480-5482 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cobalt nanowires have been electrodeposited into the pores of Anodisc™ alumina membranes after placing on one side a layer of sputtered copper, which acts as electrode and substrate during the electrodeposition. Nanowires are 60 μm long, 170–220 nm in diameter depending on the size of the pores of the alumina membrane. This array of nanowires exhibits uniaxial magnetic anisotropy related to the particular shape of each individual nanowire. On the contrary to the expected behavior in a uniaxial magnetic system, the coercivity of the array exhibits a maximum when the applied field is in a perpendicular direction with respect to the easy axis. This magnetic behavior is analyzed considering dipolar interactions among nanowires, and the magnetization of the array is obtained as a function of the magnetic characteristics of each nanowire using an iterative method. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369868
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  • 3
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance in a low-temperature GaAs/MnAs nanoscale ferromagnet hybrid structure (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3291-3293 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of a giant magnetoresistance effect in a low-temperature (LT-)GaAs/MnAs nanoscale ferromagnet hybrid structure. The MnAs nanomagnets are formed by ion implantation of Mn into LT GaAs and subsequent annealing. We have studied the magnetotransport using a vertically biased p+-GaAs/LT-GaAs:MnAs/p+-GaAs structure. A negative magnetoresistance (Δρ/ρ=[ρ(B)−ρ(0)]/ρ(0)) of up to −80% (B=7 T) is observed at low temperatures (T〈20 K), which changes its sign from negative to positive between T=15 K and T=20 K. The value of the positive magnetoresistance decreases with increasing temperature from +115% (20 K) to +1.4% (300 K). The magnetoresistance variations with B and T are correlated with the nanomagnet spacing in the structure. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122748
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  • 4
    Electronic Resource
    Electronic Resource
    Determination of closure domain penetration in electrodeposited microtubes by combined magnetic force microscopy and giant magneto-impedance techniques (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3888-3891 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The domain structure of electrodeposited Co90P10 microtubes exhibiting radial magnetic anisotropy and giant magneto-impedance effect has been characterized by combined magnetic force microscopy imaging and impedance measurements. It has been shown that the size of the closure domains increases with the CoP layer thickness. Furthermore, the depth of the closure domains has been quantitatively determined from the high frequency behavior. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1346998
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  • 5
    Electronic Resource
    Electronic Resource
    Giant magneto-impedance in heterogeneous microwires (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6501-6505 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent results concerning the giant magneto-impedance effect, GMI, in magnetic microwires having diameter in the range of a few micrometers and heterogeneous character are introduced in this work. Two types of microwires have been studied, namely, (i) magnetic microwires covered by insulating Pyrex glass coating and (ii) copper wires covered by electrodeposited magnetic microtubes. The magnetic anisotropy distribution in each type of microwire is correlated with giant magneto-impedance. While the main source of anisotropy in glass coated microwires is of magnetoelastic origin created by the stresses induced during quenching and by the coating, in the case of the microtubes the origin is the columnar growth during the electrodeposition. The influence on GMI of various treatments that modify the anisotropy is analyzed. Heterogeneous microwires with different thicknesses of insulating coating and of magnetic tube are analyzed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1323539
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  • 6
    Electronic Resource
    Electronic Resource
    Electronic states tuning of InAs self-assembled quantum dots (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3172-3174 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the dimensional tuning of InAs self-assembled quantum dots (QDs) by changing the growth kinetics during the capping of InAs islands with GaAs. Modifying the growth sequence during the capping of InAs islands, allows us to tune the thickness and lateral dimensions of the QDs while keeping the wetting layer thickness constant. Using the same method but embedding the tuned InAs islands into AlAs layers allows to further blueshift the photoluminescence emission to higher energies while keeping the wetting layer thickness constant. The main process responsible for the QDs size modification is consistent with a kinetically controlled materials redistribution of the InAs islands that minimizes the energy of the epitaxial layers at the start up of the GaAs capping deposition. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121583
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  • 7
    Electronic Resource
    Electronic Resource
    Formation of nanoscale ferromagnetic MnAs crystallites in low-temperature grown GaAs (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2532-2534 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the formation of nanosize ferromagnetic MnAs crystallites imbedded in low-temperature grown GaAs using Mn+ ion implantation and subsequent annealing. The structural and magnetic properties of the crystallites have been characterized by transmission electron microscopy, electron beam induced x-ray fluorescence, and superconducting quantum interference device magnetometry. After an optimized thermal annealing at 750 °C, MnAs crystallites of 50 nm in size are formed. These nanomagnets show room temperature ferromagnetism. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120109
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  • 8
    Electronic Resource
    Electronic Resource
    Intermixing and shape changes during the formation of InAs self-assembled quantum dots (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2014-2016 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial stages of GaAs overgrowth over self-assembled coherently strained InAs quantum dots (QDs) are studied. For small GaAs coverages (below 5 nm), atomic force microscopy (AFM) images show partially covered island structures with a regular size distribution which are elongated in the [011] direction. Analysis of the AFM profiles show that a large anisotropic redistribution of the island material is taking place during the initial GaAs overgrowth. Short time annealing experiments together with photoluminescence spectroscopy on annealed QDs are consistent with a Ga and In intermixing during the overgrowth. Surface QDs capped with 5 nm or more GaAs show a strong luminescence intensity indicating that surface QDs are remarkably insensitive to surface recombination effects. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119772
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  • 9
    Electronic Resource
    Electronic Resource
    Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001) (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 409-411 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In segregation effects during InAs growth on GaAs(001) and critical thickness for InAs self-assembled quantum dots are studied using a real time, in situ technique capable of measuring accumulated stress during growth. Due to a large (∼50%) surface In segregation of floating In, self-assembled dot formation takes place when less than one monolayer of InAs is pseudomorphically grown on GaAs. A picture of the growth process is discussed on the basis of the equilibrium between InAs and floating In dominated by the stress energy. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126992
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  • 10
    Electronic Resource
    Electronic Resource
    Critical size for localization of the L-like conduction states in InAs quantum dots grown on GaAs (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2919-2921 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The localization of the L-like conduction states is found to change from the islands to the substrate in InAs quantum dots grown on GaAs as the island-size decreases. This is due to a size-induced modification of the strain state of the islands. The critical size should correspond to dislocation formation. As a result, small InAs islands coherently strained to GaAs exhibit optical properties markedly different from those of bulk InAs. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126855
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