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  • 1
    Electronic Resource
    Electronic Resource
    Asymptotic properties of a semilinear heat equation with strong absorption and small diffusion (1990)
    Springer
    Mathematische Annalen 288 (1990), S. 675-695 
    Details
    ISSN: 1432-1807
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01444558
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  • 2
    Electronic Resource
    Electronic Resource
    Hyperfine quantum beats in C"2N"2
    Amsterdam : Elsevier
    Chemical Physics Letters 221 (1994), S. 39-45 
    Details
    ISSN: 0009-2614
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0009-2614(94)87013-6
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  • 3
    Electronic Resource
    Electronic Resource
    Analysis of current fluctuations in silicon pn+ and p+n homojunctions (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6975-6981 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed study of bipolar transport under forward-bias conditions is evaluated by Ensemble Monte Carlo simulation in two structures (p+n and pn+ junctions). The static characteristics of both structures are presented. In particular, this study focuses on a microscopic analysis of current fluctuations. A decomposition of the autocorrelation function of the total current fluctuations in electron, hole and crossed contributions is performed. In this way, the importance of each type of carrier in the spectral density of current fluctuations in both structures for a wide frequency range is determined. In the low frequency range, the presence of shot, thermal and excess noise was found. The Ensemble Monte Carlo method also permits ready evaluation of the noise equivalent temperature in both structures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361462
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  • 4
    Electronic Resource
    Electronic Resource
    Torsional mode magnetoelastic resonance in ferromagnetic amorphous wire (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5819-5827 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A torsional pendulum has been built using a stress relieved FeSiB amorphous wire. Torsional motion is magnetoelastically induced by means of the simultaneous application of longitudinal Hz and circular Hφ magnetic fields. The experimental setup allows one to determine both the torsional deformation and the changes in the longitudinal magnetization Mz of the wire. Free and forced oscillations are observed depending on the parameters of the applied fields. In both forced and free oscillation modes two resonant peaks are observed. Their frequency and amplitude dependences on the axial Hz and circular fields Hφ have been studied. Changes in shear modulus ΔG valued 60% in excess have been measured. To interpret the experimental results a theoretical model is developed taking into account the existence of two different magnetic regions in the wire, core, and shell having a different distribution of axial, radial, and shear stresses. The calculations explain the more remarkable aspects of the observed behavior. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359161
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  • 5
    Electronic Resource
    Electronic Resource
    Bending stresses and bistable behavior in Fe-rich amorphous wire : 38th Annual Confrerence on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5791-5793 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The aim of this work is to analyze for the first time the changes in magnetic properties of an Fe-rich amorphous wire (Fe77.5Si7.5B15) when it is submitted to bending stresses. Upon a reduction of the radius of curvature, Rc, of the wire (i.e., increasing bending stresses), the main changes in the magnetic properties are summarized as follows: (a) Bistable behavior disappears when reducing Rc below about 11 cm but it is again observed for Rc less than about 2.5 cm. This latter effect is also obtained for short wires (less than around 7 cm) which do not show spontaneous bistability. (b) For the case when bending stresses make bistability disappear, the susceptibility increases more than one order of magnitude with regards to the case of bistable wire, and parallel to the increase of susceptibility, a reduction of remanent magnetization is observed. The disappearance and later occurrence of the bistable behavior with increasing bending stresses are discussed in terms of the tensile and compressive stresses induced when the sample is bent. The possibility of having bistable wires with toroidal symmetry is also discussed owing to its interest for particular applications as pulse generators with reduced size and magnetic switches.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355564
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  • 6
    Electronic Resource
    Electronic Resource
    Microscopic analysis of voltage noise operation mode in SiGe/Si bipolar heterojunctions: Influence of the SiGe strained layer (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1511-1514 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Monte Carlo analysis of bipolar transport and voltage fluctuations in a p+-Si/n-Si0.7Ge0.3 heterojunction and in a p+n Si homojunction under different operation regimes is presented. Comparison of the spectral density of voltage fluctuations at low frequency, SV(x,0), between both structures reveals the strong effect of the SiGe layer on the noise behavior in the heterojunction. Alloy scattering hinders the electron mobility enhancement expected from the removal of valley degeneracy in the SiGe layer. Despite this mobility reduction, the greater accumulation of carriers in the low-doped region supported by the valence band discontinuity reduce SV(x,0) in the heterojunction for a given average voltage. This study also reveals the impact of hot carriers on noise performance in the quasisaturation regime of both diodes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373847
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetic behavior of an array of cobalt nanowires (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5480-5482 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cobalt nanowires have been electrodeposited into the pores of Anodisc™ alumina membranes after placing on one side a layer of sputtered copper, which acts as electrode and substrate during the electrodeposition. Nanowires are 60 μm long, 170–220 nm in diameter depending on the size of the pores of the alumina membrane. This array of nanowires exhibits uniaxial magnetic anisotropy related to the particular shape of each individual nanowire. On the contrary to the expected behavior in a uniaxial magnetic system, the coercivity of the array exhibits a maximum when the applied field is in a perpendicular direction with respect to the easy axis. This magnetic behavior is analyzed considering dipolar interactions among nanowires, and the magnetization of the array is obtained as a function of the magnetic characteristics of each nanowire using an iterative method. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369868
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  • 8
    Electronic Resource
    Electronic Resource
    Interacting amorphous ferromagnetic wires: A complex system (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 2768-2774 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetization reversal of high and positive magnetostriction amorphous wires gives rise to a square hysteresis loop owing to their particular domain structure. When two quasi-identical wires are placed close together, the lack of simultaneous magnetization reversal produces a temporal instability in the hysteresis loop as a consequence of the magnetostatic interaction between them. This instability, having chaotic properties, is controlled by the amplitude and frequency of the applied magnetic field and depends on the length of the wires and distance between them. A theoretical model, based on an iterative algorithm, has been developed in order to understand the properties of the whole magnetization. The instability seems to originate in an irreversible rearrangement of the closure domain structure at the ends of the wires after each magnetization reversal. The magnetization of the set of wires follows a potential law that can be explained in the framework of the self-organized criticality, a theory of the complexity. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369592
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  • 9
    Electronic Resource
    Electronic Resource
    Microscopic analysis of the influence of strain and band-gap offsets on noise characteristics in Si1−xGex/Si heterojunctions (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5012-5020 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed study under forward-bias conditions of the physical origin of high frequency noise in p+(Si)-n (Si1−xGex) heterojunctions using ensemble Monte Carlo simulation is reported. Based on the internal magnitudes, we determine how the strained SiGe layer induces different features in the perpendicular transport of a heterojunction as compared with that of a silicon p+n homojunction. The main part of this study focuses on a comparative microscopic analysis of current fluctuations in homojunction and heterojunctions over a wide range of frequencies. A method based on considering a spatial analysis of noise to isolate the contributions of both types of carrier on the Si and Si1−xGex epilayers of the devices is described. The role of electrons and holes in the different regions of the devices and the combined effects of the band discontinuities and strain on noise characteristics in Si1−xGex/Si bipolar heterojunctions is discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368748
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  • 10
    Electronic Resource
    Electronic Resource
    Magnetoelastic anisotropy in amorphous wires due to quenching : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6525-6527 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous wires are prepared by the in-water quenching technique. This procedure gives rise to local magnetoelastic anisotropies arising from the coupling between frozen-in internal stresses and magnetostriction. Azimuthal and axial components of internal stresses have been experimentally confirmed by the asymmetry of the Matteucci effect at different applied torques for the Fe77.5Si7.5B15 amorphous wire. According to classical theory of elasticity, internal stresses produced by the thermal gradient inside the wire during the quenching have been calculated. The nonzero values of azimuthal and axial stresses have been derived in addition to the well accepted radial stresses. This explains the present experimental results. Remanence and its dependence on tensile and torsional stresses has been also calculated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349895
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