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  • 1
    Publication Date: 2016-08-17
    Description: Circadian clocks are composed of transcriptional/translational feedback loops (TTFLs) at the cellular level. In Drosophila TTFLs, the transcription factor dCLOCK (dCLK)/CYCLE (CYC) activates clock target gene expression, which is repressed by the physical interaction with PERIOD (PER). Here, we show that amino acids (AA) 657–707 of dCLK, a region that...
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
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  • 2
    Publication Date: 2011-05-18
    Description: Fibroblasts are important participants in inflammation. Although not leukocytes, their capacity to produce cytokines, chemokines, and other inflammatory factors locally in tissues suggests that they can contribute to inflammatory diseases. For example, fibroblasts in a rheumatoid arthritis (RA) joint are a dominant source of IL-6 and RANKL in the synovium, both of which are therapeutic targets for inflammation and bone erosion. Previously, we found that fibroblasts can be targeted by mAb directed against cadherin-11 (cad-11), a mesenchymal cadherin that fibroblasts selectively express. Targeting cad-11 significantly reduced inflammation as assessed by joint swelling and clinical inflammation scores. However, the mechanism by which anti–cad-11 reduced inflammation was not known. Here, we show that cad-11 engagement induces synovial fibroblasts to secret proinflammatory cytokines including IL-6. Cad-11 engagement strongly synergized with TNF-α and IL-1β in the induction of IL-6. Importantly, cad-11 activated MAP kinases and NF-κB for IL-6 induction. IL-6 levels in ankles of inflamed joints were reduced in cad-11 mutant mice compared to wild-type mice with inflammatory arthritis. Thus, we suggest that cad-11 modulates synovial fibroblasts to evoke inflammatory factors that may contribute to the inflammatory process in RA.
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
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  • 3
    Publication Date: 2014-11-25
    Description: A scalable approach for integrated photonic networks in single-crystal diamond using triangular etching of bulk samples is presented. We describe designs of high quality factor ( Q =   2.51 × 10 6 ) photonic crystal cavities with low mode volume ( V m  =   1.062 × ( λ/n ) 3 ), which are connected via waveguides supported by suspension structures with predicted transmission loss of only 0.05 dB. We demonstrate the fabrication of these structures using transferred single-crystal silicon hard masks and angular dry etching, yielding photonic crystal cavities in the visible spectrum with measured quality factors in excess of Q  = 3 × 10 3 .
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 4
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    American Association for the Advancement of Science (AAAS)
    Publication Date: 2005-04-16
    Description: Cell-cell fusion is fundamental to the development and physiology of multicellular organisms, but little is known of its mechanistic underpinnings. Recent studies have revealed that many proteins involved in cell-cell fusion are also required for seemingly unrelated cellular processes such as phagocytosis, cell migration, axon growth, and synaptogenesis. We review advances in understanding cell-cell fusion by contrasting it with virus-cell and intracellular vesicle fusion. We also consider how proteins involved in general aspects of membrane dynamics have been co-opted to control fusion of diverse cell types by coupling with specialized proteins involved in cell-cell recognition, adhesion, and signaling.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Chen, Elizabeth H -- Olson, Eric N -- New York, N.Y. -- Science. 2005 Apr 15;308(5720):369-73.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Molecular Biology and Genetics, Johns Hopkins University School of Medicine, Baltimore, MD 21205, USA. echen@jhmi.edu〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/15831748" target="_blank"〉PubMed〈/a〉
    Keywords: Animals ; *Cell Fusion ; Cytoplasmic Vesicles/physiology ; Cytoskeleton/physiology ; Disease ; Humans ; Membrane Fusion ; Membrane Proteins/physiology ; Models, Biological ; Signal Transduction ; Therapeutics ; Viral Fusion Proteins/metabolism ; Virus Physiological Phenomena
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 5
    Publication Date: 2013-03-09
    Description: Cell-cell fusion is critical for the conception, development, and physiology of multicellular organisms. Although cellular fusogenic proteins and the actin cytoskeleton are implicated in cell-cell fusion, it remains unclear whether and how they coordinate to promote plasma membrane fusion. We reconstituted a high-efficiency, inducible cell fusion culture system in the normally nonfusing Drosophila S2R+ cells. Both fusogenic proteins and actin cytoskeletal rearrangements were necessary for cell fusion, and in combination they were sufficient to impart fusion competence. Localized actin polymerization triggered by specific cell-cell or cell-matrix adhesion molecules propelled invasive cell membrane protrusions, which in turn promoted fusogenic protein engagement and plasma membrane fusion. This de novo cell fusion culture system reveals a general role for actin-propelled invasive membrane protrusions in driving fusogenic protein engagement during cell-cell fusion.〈br /〉〈br /〉〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3631436/" target="_blank"〉〈img src="https://static.pubmed.gov/portal/portal3rc.fcgi/4089621/img/3977009" border="0"〉〈/a〉   〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3631436/" target="_blank"〉This paper as free author manuscript - peer-reviewed and accepted for publication〈/a〉〈br /〉〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Shilagardi, Khurts -- Li, Shuo -- Luo, Fengbao -- Marikar, Faiz -- Duan, Rui -- Jin, Peng -- Kim, Ji Hoon -- Murnen, Katherine -- Chen, Elizabeth H -- R01 GM098816/GM/NIGMS NIH HHS/ -- New York, N.Y. -- Science. 2013 Apr 19;340(6130):359-63. doi: 10.1126/science.1234781. Epub 2013 Mar 7.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Molecular Biology and Genetics, Johns Hopkins University School of Medicine, Baltimore, MD 21205, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/23470732" target="_blank"〉PubMed〈/a〉
    Keywords: Actins/*metabolism ; Animals ; Caenorhabditis elegans Proteins/genetics/*metabolism ; Cell Adhesion Molecules/genetics/*metabolism ; *Cell Communication ; Cell Culture Techniques ; *Cell Fusion ; Cell Line ; Cell Surface Extensions/metabolism/physiology ; Drosophila Proteins/genetics/metabolism ; Drosophila melanogaster/cytology ; Immunoglobulins/genetics/metabolism ; Membrane Glycoproteins/genetics/*metabolism ; Membrane Proteins/genetics/metabolism ; Muscle Proteins/genetics/metabolism
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 952-954 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The carrier profile for InAs films grown on GaP is modeled as a first-order approximation which assumes that 90° edge dislocation intersections and the threading dislocation intersections act as shallow donors. Due to dislocation annihilation during growth, the threading dislocation intersection density decreases as the inverse of the distance x from the InAs/GaP interface, D(x)=D0x0/(x0+x), where D0 and x0 are dislocation density at the InAs/GaP interface and the first annihilation position from the interface, respectively. The carrier profile in InAs films can be described by a similar equation that is deduced from the threading dislocation intersection profile. The calculated carrier profiles agree well with measured carrier profiles. This correlation supports our hypothesis that both the edge dislocation intersections and the threading dislocation intersections act as shallow donor sources. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1551-1553 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of lattice mismatched InAs/GaP heterojunctions are examined. In spite of a high dislocation density at the heterointerface, the current versus voltage characteristics show nearly ideal behavior with low reverse leakage currents and high breakdown voltages. The forward current varied exponentially with bias displaying ideal factors of 1.10 or less. Band offsets estimated from current–voltage and capacitance–voltage analysis are consistent with previous estimates based on differences in Schottky barrier heights. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1678-1680 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate annealed low-temperature grown (LTG) GaAs to be a highly effective etch-stop layer while photoetching n-type normal-growth-temperature GaAs. During this process, the etch rate is controlled by the transport of photogenerated carriers to the semiconductor/electrolyte interface. Because of the very short minority carrier lifetime in LTG-GaAs, only a very small portion of photogenerated carriers can reach the semiconductor surface to complete the electrolytic decomposition reaction. Therefore, the etch rate of LTG-GaAs is reduced considerably. In our studies, the etch rate selectivity can be as high as 800. Furthermore, we demonstrate that doping concentration, presence of an ohmic contact, photon energy, and pH value of the etching solution can be used to control the etch rate of n-GaAs during the photoetching process. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 55 (1990), S. 3697-3699 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Crystal Growth 139 (1994), S. 251-258 
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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