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  • 1
    Electronic Resource
    Electronic Resource
    Performance characteristics of In0.2Ga0.8As/GaAs multiquantum-well lasers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3822-3825 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The performance characteristics of ridge waveguide In0.2Ga0.8As/GaAs multiquantum-well lasers are reported. The lasers emit more than 50 mW/facet in the temperature range 20–100 °C in the fundamental transverse mode. The external differential quantum efficiency of 250-μm-long lasers is 0.4 mW/mA/facet. The internal optical loss is 14 cm−1. The optical gain is found to vary linearly with current. The increase in threshold current with increasing temperature in these lasers is primarily due to decreasing carrier lifetime (increased carrier loss) at high temperature. Increasing the heterobarrier height may further improve the high-temperature performance of these devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346265
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  • 2
    Electronic Resource
    Electronic Resource
    High-speed modulation and nonlinear damping effect in InGaAs/GaAs lasers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2476-2478 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high-speed modulation characteristics of ridge waveguide InGaAs/GaAs strained quantum well lasers have been investigated. The lasers have bandwidth of 12 GHz at 21 mW of output power. The differential gain coefficient, the nonlinear damping factor (κ factor) and the gain suppression coefficient (ε) are found to be 6.4 × 10−16 cm2, 0.6 ns and 6.2 × 10−17 cm3, respectively. The above differential gain coefficient and κ factor for InGaAs/GaAs strained quantum-well lasers are a factor of 2 larger than that for unstrained InGaAs/InP quantum-well lasers. The ε value for these strained and unstrained quantum-well lasers are comparable.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349405
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  • 3
    Electronic Resource
    Electronic Resource
    Substrate orientation effects on dopant incorporation in InP grown by metalorganic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4095-4097 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the doping incorporation and activation of InP growth using metalorganic chemical vapor deposition on 〈100(approximately-greater-than), 〈311(approximately-greater-than)B, and 〈110(approximately-greater-than) InP substrates. Effects of orientation, growth temperature, and V/III fluxes were studied. The dopants used were Zn from dimethylzinc [(CH3)2Zn] and diethylzinc [(C2H5)2Zn], S from hydrogen sulfide [H2S], Si from silane [SiH4], and Sn from tetraethyltin [(C2H5)4Sn]. The incorporation and activation of the p-type dopant Zn are elevated on the 〈311(approximately-greater-than)B and 〈110(approximately-greater-than) planes, while the incorporation is suppressed for the n-type dopants (S, Si, and Sn). The n-type dopant Sn has similar incorporation and activation on the various substrate orientations studied. Anomalous Zn doping on the higher order planes 〈311(approximately-greater-than)B and 〈110(approximately-greater-than) lead to the Zn incorporation exceeding the solubility limit in InP. Incorporated Zn levels as high as 1.0×1019 cm−3 were measured, and the corresponding activated Zn level was as high as 5.4×1018 cm−3 on a 〈110(approximately-greater-than) InP substrate. Interdiffusion of the p-type dopant Zn into the S-doped n-type InP substrate is inhibited by a high S-doping level and segregates at the substrate–epilayer interface. If the S-doping level is lower than the Zn concentration, then Zn diffuses deep into the substrate at a uniform level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352839
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  • 4
    Electronic Resource
    Electronic Resource
    (GaAs)m(AlAs)n short-period superlattice quantum-well lasers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2085-2088 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and performance characteristics of (GaAs)3/(AlAs)1 short-period superlattice (SPS) quantum-well lasers emitting at 737 nm. The SPSs consists of eight periods of 3 and 1 monolayers of GaAs and AlAs, respectively. The (GaAs)m/(AlAs)n SPSs have many advantages over their equivalent AlGaAs alloy counterparts. The broad-area threshold current density, Jth, for 500-μm-long lasers is 510 A cm−2. The 500-μm-long ridge waveguide lasers have a threshold current of 48 mA with a characteristic temperature of 68 K in the temperature range 19–60 °C. The external differential quantum efficiency near threshold is 0.58 mW/mA/facet. The devices lase in a single mode with spectral width within the resolution limit of the spectrometer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353155
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  • 5
    Electronic Resource
    Electronic Resource
    Analysis of current spreading, carrier diffusion, and transverse mode guiding in surface emitting lasers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1961-1963 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for current spreading and carrier distribution in the active region of a gain-guided or weakly index-guided surface emitting laser is presented. At high currents, current "crowding'' takes place which reduces the amount of carrier spreading beyond the contact and hence can help stabilize the fundamental mode oscillation. The fundamental mode is a Gaussian whose width varies approximately as the square root of the contact radius.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346594
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  • 6
    Electronic Resource
    Electronic Resource
    Fabrication and performance characteristics of buried-facet optical amplifiers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3943-3947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fabrication, performance characteristics, and design rules of buried-facet optical amplifiers are described. Chip gain of 25 dB, gain ripple of 〈1 dB, and gain difference of ≤1 dB for TE- and TM-polarized light are observed. The gain ripple and polarization dependence of gain correlate well with the ripple and polarization dependence of the amplified spontaneous emission spectrum. The performance of buried-facet amplifiers is comparable to that of cleaved-facet amplifiers with very good antireflection (R〈10−4) coatings. The buried-facet design reduces the requirement on antireflection coatings and makes the fabrication process more reproducible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345003
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  • 7
    Electronic Resource
    Electronic Resource
    Spectroscopic properties of Yb-doped silica glass (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 576-581 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out a systematic study of optical emission in Yb-doped fiber glass materials which can be used for fiber laser applications. The stimulated emission crosssections of these materials have been calculated. The wavelength dependence of emission of these materials has been studied. The peak emission cross section in Yb-doped silica glass is 2.6 pm2 and the peak wavelength is at 974 nm. The codopants do not significantly alter the emission cross section or the peak wavelength of this cross section.© 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1425445
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  • 8
    Electronic Resource
    Electronic Resource
    Temperature dependence of carrier lifetime and Auger recombination in 1.3 μm InGaAsP (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5443-5449 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carrier lifetime has been measured by the luminescence decay of a 1.3-μm-InGaAsP layer excited by a mode locked YAG laser at 1.06 μm. The measurements have been done as a function of excitation intensity for nearly three orders of magnitude of carrier concentration (4×1016–2×1019 cm−3) and for different temperatures (between 32 and 346 K). At low and moderate carrier density, the lifetime τ follows the variation with excitation of the theoretical radiative lifetime. At high carrier density (above 1018 cm−3) the carrier decay rate increases more rapidly than the radiative one and around room temperature this can be accounted for by an additional recombination mechanism whose variation with excitation is typical of an Auger process. The Auger coefficient (Ca=2.6×10−29 cm6 s−1) does not vary with temperature within experimental uncertainty. This suggests that though Auger recombination is for a large part responsible for the low T0 value of 1.3-μm InGaAsP lasers, the temperature dependence of the Auger coefficient does not contribute to it.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334820
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  • 9
    Electronic Resource
    Electronic Resource
    Spectroscopic properties of Nd-doped glass for 944 nm laser emission (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3079-3083 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A tunable laser operating near 944 nm is important for the detection of water vapor in the atmosphere. In this work, we have carried out a systematic study of Nd doped fiber glass materials which can be used for this purpose. The emission cross sections of these materials at 944 nm have been calculated. The wavelength dependence of emission of these materials has been studied. Among the silica-based materials Nd doped silica fiber glass has the largest cross section for 944 nm laser emission. The codopants reduce this cross section. Some Nd doped nonsilica materials such as Ba0.25Mg0.75Y2Ge2O12 and chloride glass have higher stimulated emission cross section than silica-based materials. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1347953
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  • 10
    Electronic Resource
    Electronic Resource
    Modulation doped InGaAsP quantum well laser emitting at 1.55 μm (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 38-42 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A number of parameters, such as gain, modulation response, linewidth enhancement factor and relative intensity noise, in a modulation-doped InGaAsP quantum well (QW) laser emitting at 1.55 μm have been theoretically investigated. The results indicate that the relaxation oscillation frequency for a p-type modulation doped QW laser is enhanced by a factor of more than 2 compared to that for undoped MQW lasers, the linewidth enhancement factor of a p-type modulation doped QW laser is reduced to 1/2 that of an undoped MQW laser and the relative intensity noise is reduced by a factor of 〉10 dB compared to that for undoped MQW lasers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1376403
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