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  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial SnO2 thin films grown on (1¯012) sapphire by femtosecond pulsed laser deposition (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1060-1065 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An ultrafast (100 fs) Ti sapphire laser (780 nm) was used for the deposition of SnO2 thin films. The laser-induced plasma generated from the SnO2 target was characterized by optical emission spectroscopy and electrostatic energy analysis. It was found that the ionic versus excited-neutral component ratio in the plasma plume depends strongly on the amount of background oxygen introduced to the deposition chamber. Epitaxial SnO2 films with high quality and a very smooth surface were deposited on the (1¯012) sapphire substrate fabricated at 700 °C with an oxygen background pressure of ∼0.1 mTorr. The films are single crystalline with the rutile structure, resulting from the high similarity in oxygen octahedral configurations between the sapphire (1¯012) surface and the SnO2 (101) surface. Hall effect measurements showed that the electron mobility of the SnO2 film is lower than that of bulk single crystal SnO2, which is caused by the scattering of conduction electrons at the film surface, substrate/film interface, and crystal defects. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1426245
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical and stoichiometric characteristics of CdTe films deposited by the hot-wall flash-evaporation technique (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5076-5079 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and stoichiometric characteristics of polycrystalline CdTe films deposited by the hot-wall flash-evaporation technique are reported for different deposition parameters. The crystallites in these films grow in a columnar type of grain. The stoichiometry of the films is largely dependent on substrate (Ts) and wall temperatures (Tw) during deposition. At low values of Ts and Tw (∼92 and 425 °C, respectively) a large excess of Te is present (∼30 at. %). At Ts(approximately-equal-to)192 °C and Tw(approximately-equal-to)560 °C, nearly stoichiometric films were obtained. The electrical characteristics were strongly dependent on the amount of excess Te present in the samples. A change in the resistivity of up to seven orders of magnitude was measured between the samples with ∼30 at. % of excess Te and those with a stoichiometry close to 1:1. Also a large difference in the resistivity measurements was observed on the surface and across the samples for the different deposition conditions studied. The behavior of the resistivity with temperature in the 100–500 K range is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338957
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  • 3
    Electronic Resource
    Electronic Resource
    Structure–property relationship of nanocrystalline tin dioxide thin films grown on (1¯012) sapphire (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6056-6061 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work demonstrates the correlation between the microstructure of nanocrystalline SnO2 thin films and their electrical transport properties and sensitivities to reducing gases. SnO2 thin films were deposited on the (1¯012) surface of α-Al2O3 (sapphire) using electron beam evaporation of a pure SnO2 ceramic source, followed by postdeposition annealing in synthetic air. SnO2 thin films with randomly oriented nanosized grains were obtained by annealing an amorphous SnO film deposited at room temperature. Films with nanosized SnO2 laminates were obtained by annealing epitaxial α-SnO films deposited at 600 °C. The laminates are oriented with their (101) planes parallel to the substrate surface and have a high density of coherent twin boundaries. Hall measurements indicate that the electron concentration of the film with laminate grains is much lower than for the film with random grains. It is proposed that the high density twin boundaries inside the laminates trap conducting electrons and significantly reduce the electron concentration. As a result, the sensitivity to reducing gases of the laminar film is higher than that of the corresponding film with randomly oriented SnO2 grains. It was also found that the grain size has strong effects on the sensitivity of SnO2 films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368866
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  • 4
    Electronic Resource
    Electronic Resource
    Metal chelate fluorescence enhancement by nonionic micelles: surfactant and auxiliary ligand nature influence on the niobium-lumogallion complex (1986)
    s.l. : American Chemical Society
    Analytical chemistry 58 (1986), S. 2161-2166 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00124a012
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  • 5
    Electronic Resource
    Electronic Resource
    Epitaxial nanocrystalline tin dioxide thin films grown on (0001) sapphire by femtosecond pulsed laser deposition (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 614-616 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystalline tin dioxide (SnO2) thin films of different thicknesses were fabricated on the (0001) surface of α-Al2O3 (sapphire) using femtosecond pulsed laser deposition. X-ray diffraction and transmission electron microscopy (TEM) analysis revealed that the microstructure of the films strongly depends on the film thickness. The films with a small thickness (〈30 nm) are composed of nanosized columnar (100) oriented grains (3–5 nm in diameter) which grow epitaxially on the substrate with three different in-plane grain orientations. The (101) oriented grains (25 nm in diameter) appear when the film thickness becomes larger than a critical value (about 60 nm). The volume fraction of the (101) grains increases with film thickness. Cross-section TEM studies indicated that the (101) oriented grains nucleate on the top of the (100) oriented nanosized grains and show abnormal grain growth driven by surface energy minimization. As a result, the electrical transport properties are strongly dependent on the film thickness. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1386406
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  • 6
    Electronic Resource
    Electronic Resource
    Immunoglobulin heterogeneity in the rainbow trout, Salmo gairdneri Richardson (1989)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of fish diseases 12 (1989), S. 0 
    Details
    ISSN: 1365-2761
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: Abstract. Hetereogeneity of rainbow trout immunoglobulins was demonstrated by using monoclonal antibody 1A6 and polyacrylamide-gradient gel electrophoresis. Immunoglobulins defined by elisa using monoclonal antibody 1A6 were about 30% of the total immunoglobulins, detected by elisa using polyclonal antibodies, in healthy rainbow trout. In trout obtained from farms with a previous history of infectious viral diseases, 1A6-immunoglobulins were only about 14% of the total. Several serum pools from infected trout could be totally depleted of 1A6-immunoglobulins (about 12% of total immunoglobulins) by affinity chromatography over Sepharose immobilized monoclonal antibody 1A6. Polyacrylamide-gradient gel electrophoresis under denaturing conditions of total immunoglobulins, 1A6 immunoglobulins and no-1A6 immunoglobulins purified by affinity chromatography, showed a majority heavy chain of 70 KDa and a minority heavy chain of about 60 KDa, two light chains of 24 and 26 KDa, and a 11–14 KDa polypeptide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2761.1989.tb00557.x
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  • 7
    Electronic Resource
    Electronic Resource
    SOLVING TRANSIENT DYNAMIC CRACK PROBLEMS BY THE HYPERSINGULAR BOUNDARY ELEMENT METHOD (1997)
    Oxford, UK : Blackwell Publishing Ltd
    Fatigue & fracture of engineering materials & structures 20 (1997), S. 0 
    Details
    ISSN: 1460-2695
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract— The subject of hypersingular boundary integral equations is a rapidly developing topic due to the advantages which this kind of formulation offers compared to the standard boundary integral method. The hypersingular formulation is particularly well suited for fracture mechanics problems, where there are important gradients of the stress field and singularities. This formulation for time domain antiplane problems has been recently addressed by the authors and in the present paper, the formulation for time domain plane problems is presented and applied for the first time. A mixed Boundary Element approach based on the standard integral equation and the hypersingular integral equation is developed. The mixed formulation allows for a very simple discretization of the problem, where no subregion is needed. Conforming quadratic elements are used for the crack and the external boundaries. The hypersingular integral equation is used for collocation points within the crack elements, while the standard integral representation is used for the external boundaries. Several examples with different crack geometries are studied to illustrate the possibilities of the method. The Stress Intensity Factor (S.I.F.) is very accurately computed from the crack tip opening displacements along the crack tip element. The results show that the proposed approach for S.I.F. evaluation is simple and produces accurate solutions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1460-2695.1997.tb00309.x
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  • 8
    Electronic Resource
    Electronic Resource
    ON THE USE OF THE STRIP-YIELD MODEL TO PREDICT FATIGUE CRACK GROWTH UNDER IRREGULAR LOADING (1997)
    Oxford, UK : Blackwell Publishing Ltd
    Fatigue & fracture of engineering materials & structures 20 (1997), S. 0 
    Details
    ISSN: 1460-2695
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract— In this paper, the behaviour of the LEFM strip-yield model proposed by Newman and implemented in the FASTRAN II computer program is analyzed. The capabilities of the model to predict crack growth life under variable amplitude loading is considered. Special attention is paid to the effect of the constraint factors used to consider the stress condition (plane stress to plane strain), the effect of the finite length loading sequence and the effect of overloads into an irregular loading history. The results of simulation for 30 different loading histories obtained from the same stationary random process are analyzed and compared with the experimental results obtained for 2024-T351 aluminium alloy. The simulated lives present a fairly good fit with the experimental results, with a strong influence of the constraint factor selected and of the maximum peak in the loading history. Although predictions are usually good, it has been found that for any constraint factor producing good life predictions (with respect to the mean value of the Life obtained with the 30 loading histories) the results of each particular simulation may be over- or under-conservative depending on the maximum peak in the loading history used.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1460-2695.1997.tb00306.x
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  • 9
    Electronic Resource
    Electronic Resource
    CALCULATION OF THE STRESS INTENSITY FACTOR AND ESTIMATION OF ITS ERROR BY A SHAPE SENSITIVITY ANALYSIS (1997)
    Oxford, UK : Blackwell Publishing Ltd
    Fatigue & fracture of engineering materials & structures 20 (1997), S. 0 
    Details
    ISSN: 1460-2695
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract— The precision with which the stress intensity factor (SIF) can be calculated from a finite element solution depends essentially on the extraction method and on the discretization error. In this paper, the influence of the discretization error in the SIF calculation was studied and a method for estimating the resulting error was developed. The SIF calculation method used is based on a shape design sensitivity analysis; this assures that the resulting error in the extracted SIF depends solely on the global discretization error present in the finite element solution. Moreover, this method allows us to extend the Zienkiewicz-Zhu discretization error estimator to the SIF calculation. The reliability of the proposed method was analysed solving a two-dimensional problem using an h-adaptive process. Also the convergence of the error with the h-adaptive refinement was studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1460-2695.1997.tb00310.x
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  • 10
    Electronic Resource
    Electronic Resource
    Thermodynamic characterization by inverse gas chromatography of a 50% methyl, 50% trifluoropropyl polysiloxane (1992)
    s.l. : American Chemical Society
    Macromolecules 25 (1992), S. 4665-4670 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00044a031
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