ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Line shaped electron beam was used for the recrystallization of nanocrystalline silicon layerthat had been deposited on the low cost borosilicate glass-substrate in this paper. Polycrystallinesilicon films of a 20μm thickness, which are the base for a solar cell absorber, have been investigated.Tungstendisilicide (WSi2) was formed at the tungsten/silicon interface as well as grain boundaries ofthe silicon. WSi2 improved the wetting and adhesion of the silicon melt. The surface morphology ofthe film was strongly influenced by the recrystallization energy density applied. Low energy densityresulted in non wetted WSi2/W areas due to the reaction between the silicon melt and the tungsten.With the increased energy, the capping layer become smooth and continuous due to the pinholesbecomes fewer and smaller. Excess of the energy density led to larger voids in the capping layer,more WSi2/Si eutectic crystallites, a thinner tungsten layer, and a thicker tungstendisilicide layer
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/15/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.544-545.471.pdf
Permalink