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  • 1
    Electronic Resource
    Electronic Resource
    Structural and transport properties of infinite layer Ba"1"-"xSr"xCuO"2"+"δ films grown by MBE
    Amsterdam : Elsevier
    Physica C: Superconductivity and its applications 235-240 (1994), S. 977-978 
    Details
    ISSN: 0921-4534
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0921-4534(94)91713-2
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  • 2
    Electronic Resource
    Electronic Resource
    Erratum: "Probing domain microstructure in ferroelectric Bi4Ti3O12 thin films by optical second harmonic generation" [J. Appl. Phys. 89, 1387 (2001)] (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5230-5230 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1360714
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  • 3
    Electronic Resource
    Electronic Resource
    Room-temperature ferroelectricity in strained SrTiO 3 (2004)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 430 (2004), S. 758-761 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. Adjusting the ferroelectric transition temperature (Tc) is traditionally accomplished by chemical substitution—as in ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature02773
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  • 4
    Electronic Resource
    Electronic Resource
    Microstructure of epitaxial SrRuO3 thin films on (001) SrTiO3 (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 909-911 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metallic oxide films of SrRuO3 deposited on (001) SrTiO3 by pulsed laser deposition have been investigated by transmission electron microscopy (TEM) techniques. These films have a single crystalline structure with an extremely smooth surface. A TEM study of cross-sectional samples shows that the film grew epitaxially on the (001) surface of the SrTiO3 substrate. The films grew along the [110] directions with an in-plane orientation relationship of either SrRuO3[1¯10]//SrTiO3 [100] and SrRuO3[001]//SrTiO3[010], or SrRuO3[11¯0]//SrTiO3[010] and SrRuO3[001]//SrTiO3 [100]. Domains with a rotation of 90° around SrRuO3[110] were observed in the dark-field image of plan-view samples. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120870
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of stress relaxation of epitaxial SrRuO3 thin film on microstructures (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4188-4191 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the effect of lattice stress relaxation on the microstructures of epitaxial thin films by domain structure studies of epitaxial SrRuO3 thin films grown on vicinal (001) SrTiO3 substrates. X-ray diffraction analysis revealed that the as-grown films are single domain and have a strained lattice due to the lattice mismatch with the substrate. In contrast, plan-view transmission electron microscopy (TEM) images obtained from the same films showed the coexistence of domains with three different crystallographic orientations. The discrepancy is attributed to the lattice stress relaxation occurring on the TEM specimens as the substrate material is eliminated by ion milling or etching, resulting in the formation of elastic domains with different crystallographic orientations. These studies directly reveal a crucial effect of the lattice strain relaxation on the microstructures and properties of epitaxial thin films when the substrate material is removed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371345
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  • 6
    Electronic Resource
    Electronic Resource
    Structure–property relationship of nanocrystalline tin dioxide thin films grown on (1¯012) sapphire (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6056-6061 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work demonstrates the correlation between the microstructure of nanocrystalline SnO2 thin films and their electrical transport properties and sensitivities to reducing gases. SnO2 thin films were deposited on the (1¯012) surface of α-Al2O3 (sapphire) using electron beam evaporation of a pure SnO2 ceramic source, followed by postdeposition annealing in synthetic air. SnO2 thin films with randomly oriented nanosized grains were obtained by annealing an amorphous SnO film deposited at room temperature. Films with nanosized SnO2 laminates were obtained by annealing epitaxial α-SnO films deposited at 600 °C. The laminates are oriented with their (101) planes parallel to the substrate surface and have a high density of coherent twin boundaries. Hall measurements indicate that the electron concentration of the film with laminate grains is much lower than for the film with random grains. It is proposed that the high density twin boundaries inside the laminates trap conducting electrons and significantly reduce the electron concentration. As a result, the sensitivity to reducing gases of the laminar film is higher than that of the corresponding film with randomly oriented SnO2 grains. It was also found that the grain size has strong effects on the sensitivity of SnO2 films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368866
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  • 7
    Electronic Resource
    Electronic Resource
    Oxidation and phase transitions of epitaxial tin oxide thin films on (1¯012) sapphire (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6048-6055 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the structural behavior and electrical transport properties of epitaxial α-SnO thin films grown on the (1¯012) α-Al2O3 (sapphire) substrate. Hall effect measurements revealed that the epitaxial as-deposited SnO film is a p-type semiconductor. In situ x-ray diffraction studies show that the α-SnO phase is metastable and will transform into SnO2 with the rutile type structure when annealed at high temperatures in air. The onset of this phase transformation was observed to begin approximately at 300 °C during heating. Shortly thereafter, rutile SnO2 was observed to coexist with α-SnO and intermediate products such as Sn and Sn3O4. After being annealed at temperatures above 600 °C, the film then fully transformed into the rutile SnO2 phase. Our results show that the α-SnO to SnO2 structural transformation proceeds initially by the localized disproportionate redistribution of internal oxygen at low temperature, followed by the transformation of the remaining SnO phase and intermediate phases into SnO2 via the inward diffusion of external oxygen at higher temperatures. Most of the SnO2 crystallites nucleate epitaxially on α-SnO with the orientation relationship of (101)SnO2//(001)SnO and their growth processes are controlled by the (101)SnO2//(001)SnO interfaces, leading to a (101) texture and a laminar grain shape for SnO2. The relationship between the electrical transport properties and the structural evolution of the film has also been investigated. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368865
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  • 8
    Electronic Resource
    Electronic Resource
    Microstructure and growth mechanism of epitaxial SrRuO3 thin films on (001) LaAlO3 substrates (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6365-6369 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SrRuO3 thin films deposited on (001) LaAlO3 substrates by 90° off-axis sputtering at 600 °C were studied by atomic force microscopy (AFM) and transmission electron microscopy (TEM). Both AFM and cross-section TEM investigations show that the films have a rough surface. Plan-view TEM studies demonstrate that the films are composed of all three different types of orientation domains (twins). These domain structures and surface morphology are different from the SrRuO3 film deposited on the (001) SrTiO3 substrate which has an atomically flat surface and is composed of only the [110]-type domains. The reason for these differences was ascribed as the effect of lattice mismatch across the film/substrate interface. It is proposed that a SrRuO3 thin film grows on a (001) SrTiO3 substrate through a two-dimensional nucleation process, while a film on LaAlO3 grows with three steps: the coherent growth of a few monolayers at the initial stage through a two-dimensional nucleation process; the formation of misfit dislocations when the film reaches a critical thickness; and an island-like growth thereafter due to the nonuniform distribution of stress along the film surface. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368160
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial SnO2 thin films grown on (1¯012) sapphire by femtosecond pulsed laser deposition (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1060-1065 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An ultrafast (100 fs) Ti sapphire laser (780 nm) was used for the deposition of SnO2 thin films. The laser-induced plasma generated from the SnO2 target was characterized by optical emission spectroscopy and electrostatic energy analysis. It was found that the ionic versus excited-neutral component ratio in the plasma plume depends strongly on the amount of background oxygen introduced to the deposition chamber. Epitaxial SnO2 films with high quality and a very smooth surface were deposited on the (1¯012) sapphire substrate fabricated at 700 °C with an oxygen background pressure of ∼0.1 mTorr. The films are single crystalline with the rutile structure, resulting from the high similarity in oxygen octahedral configurations between the sapphire (1¯012) surface and the SnO2 (101) surface. Hall effect measurements showed that the electron mobility of the SnO2 film is lower than that of bulk single crystal SnO2, which is caused by the scattering of conduction electrons at the film surface, substrate/film interface, and crystal defects. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1426245
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  • 10
    Electronic Resource
    Electronic Resource
    Interfacial structure of epitaxial MgB2 thin films grown on (0001) sapphire (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 685-687 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure and interfacial atomic structure of MgB2 thin films fabricated on the (0001) Al2O3 substrate were characterized by transmission electron microscopy. It was found that the MgB2 films grow epitaxially on the substrate with an orientation relationship with respect to the substrate as: (0001)MgB2(parallel)(0001)Al2O3 and [112¯0]MgB2(parallel)[101¯0]Al2O3. At the film/substrate interface, both MgO and MgAl2O4 phases were observed, which also grow epitaxially on the (0001) Al2O3 substrate. The formation of these intermediate phases is ascribed to the existence of oxygen during the annealing. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1489101
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