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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3030-3032 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the anisotropic transport properties of Bi2223/Ag tapes with and without the silver sheath. The anisotropy ratio of the resistivity along the rolling plane to the resistivity perpendicular to the rolling plane (∼4–10) is orders of magnitude smaller than single-crystal anisotropy ratios. Results are consistent with current flow along crystallographic ab planes even for transport normal to the tape plane.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transport critical current density Jc of oxide-powder-in-tube mono- and multifilamentary Bi-2223/Ag tapes has been determined before and after irradiation by 0.8 GeV protons at fluences up to 7.0×1016 protons/cm2. Proton-induced fission of the Bi nuclei produced up to 8.6×1013 fissions/cm3, creating long tracks at densities equivalent to matching fields up to 1.1 T. Relative to unirradiated tapes, Jc values at 75 and 64 K show no decrease in self field, indicating no breakdown of intergranular coupling, and show large, dose-dependent enhancements in magnetic fields oriented parallel to the tape normal. © 1995 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1069-1071 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conductive RuO2 thin films have been heteroepitaxially grown by pulsed laser deposition on Si substrates with yttria-stabilized zirconia (YSZ) buffer layers. The RuO2 thin films deposited under optimized processing conditions are a-axis oriented normal to the Si substrate surface with a high degree of in-plane alignment with the major axes of the (100) Si substrate. Cross-sectional transmission electron microscopy analysis on the RuO2/YSZ/Si multilayer shows an atomically sharp interface between the RuO2 and the YSZ. Electrical measurements show that the crystalline RuO2 thin films are metallic over a temperature range from 4.2 to 300 K and are highly conductive with a room-temperature resistivity of 37±2 μΩ cm. The residual resistance ratio (R300 K/R4.2 K) above 5 for our RuO2 thin films is the highest ever reported for such films on Si substrates. © 1996 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 665-667 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the (a00) oriented as well as the (00l) oriented epitaxial SrBi2Ta2O9 thin film grown on (100) LaAlO3 and (200) yttria-stabilized zirconia single crystal substrates. On (100) SrTiO3 single crystal substrate, we only observe the (00l) oriented epitaxial growth of SrBi2Ta2O9 thin film. We infer that the (a00) oriented epitaxial growth results from the strain by the lattice mismatch. The band gaps of the (00l) and the (a00) oriented SrBi2Ta2O9 films are ∼3.9 and ∼3.5 eV, respectively. The two epitaxial orientations of ferroelectric SrBi2Ta2O9 thin film can provide an opportunity to study the effects on microwave and optical waveguides as well as underlying anisotropic physical properties. © 1998 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1426-1428 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We prepared for Mott–Hubbard-type perovskite La0.5Sr0.5TiO3+δ thin films under an oxygen reduced environment, 5% H2/Ar. Control of the partial pressure during deposition could change the conductivity of the films, and induces a metal–insulator transition. In addition, we observed an excellent transparency at visible light with a metallic behavior, where this property could be utilized as a transparent conductor. © 2001 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 435-437 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the electric field dependence of ferroelectric phase transition in epitaxial SrTiO3 (STO) thin films grown by the pulsed-laser ablation deposition method. Metallic oxides SrRuO3 (SRO) and La0.5Sr0.5CoO3 (LSCO) were used as the bottom electrodes, and the bottom electrodes influence the dielectric properties of STO films. The change in the dielectric properties originates from the different work functions and the lattice mismatches among STO film, the bottom electrode, and the substrate. However, the field-induced ferroelectric phase transition temperatures of the STO/SRO/(100) STO and the STO/LSCO/(100) LaAlO3 systems are proportional to the applied electric field, indicating a field-induced first-order ferroelectric phase transition. © 2000 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1574-1576 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a scanning microwave microscope, we investigated the local electrical properties of epitaxial CaRuO3 thin films. The films showed a metal–insulator transition depending on the growth temperature and their thickness. We observed spatially separated highly conducting and poorly conducting regions in the films grown at a high temperature of 800 °C, which showed insulating behavior. The conduction in the CaRuO3 thin films with insulating behavior is percolative through the highly conducting regions and is closely related to this two-phase behavior. © 2002 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 549-551 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report structural and ferroelectric properties of epitaxial PbZr0.53Ti0.47O3 thin films on SrRuO3 and La0.5Sr0.5CoO3 grown on (100) LaAlO3 single crystal substrates, where all the films were deposited by the pulsed-laser deposition method. While the PbZr0.53Ti0.47O3 film on La0.5Sr0.5CoO3/LaAlO3 shows (00l)-oriented heteroepitaxial growth with a rhombohedral structure, the PbZr0.53Ti0.47O3 film on SrRuO3/LaAlO3 shows a tetragonal mixture of (00l) and (h00) heteroepitaxial growth and the (00l)-oriented rhombohedral heteroepitaxial growth. The mixture of the rhombohedral and the tetragonal structures of the PbZr0.53Ti0.47O3 film on SrRuO3/LaAlO3 influences the ferroelectric properties by domain pinning. © 1999 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 67 (1995), S. 2858-2863 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 116 (2002), S. 3058-3062 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: For a critical binary liquid mixture where the surface tension difference between the two components is very large, the component with the lowest surface tension completely saturates the liquid-vapor surface. The variation in the local volume fraction v(z), with depth z into the liquid mixture, is described by a universal surface scaling function P±≡P±(z/ξ±), which takes differing forms in the one- (+) and two-phase (−) regions, where ξ represents the bulk correlation length. Carpenter et al. [Phys. Rev. E 59, 5655 (1999); 61, 532 (2000)] determined P± using the ellipsometric critical adsorption data of four different critical binary liquid mixtures. A deficiency of this prior study was that each of the liquid mixtures possessed at least one polar component, which could have generated distortions in the function P±(z/ξ±). In this publication, we demonstrate that P±, determined in the previous study, provides an excellent description of the nonpolar critical binary liquid mixture 1,1,2,2-tetrabromoethane+n-dodecane. © 2002 American Institute of Physics.
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