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  • 1
    Publication Date: 2024-01-12
    Description: The nocturnal distribution and resource use by Ryukyu flying foxes was studied along 28 transects, covering five types of habitats, on Iriomote Island, Japan, from early June to late September, 2005. Bats were mostly encountered solitarily (66.8%) or in pairs (16.8%), with a mean linear density of 2.5 \xc2\xb1 0.6 bats/km of transect/night. Across the island, however, bat densities were distributed non-randomly among transect-nights, not correlated with transect length, and showed a slightly clumped distribution (variance/mean = 3.3). Outskirt trails contributed higher values to the relative importance of bat abundance, but the highest mean abundances occurred mostly at village sites on the west coast, which on average devoted only a quarter of their land area to agriculture/husbandry compared to those on the east coast. This supports our prediction that higher bat abundances are found in areas with less anthropogenic interference and more forest. Among habitats, the mean total abundance and density were lower in cultivated areas than in villages and inland forests. Bat perches in cultivated areas were also lower, and were in correspondence with lower shrub and canopy heights, and less canopy coverage. Flying fox abundance was correlated moderately with the heterogeneity of the tree composition, and strongly with the density of major fruiting trees. Thirty-nine species of plants and some animal items were used by Ryukyu flying foxes, including at least 31 species of fruits, 13 species of flowers, and leaves of seven species, with 14 species new to the record. Ficus septica and F. variegata were the most frequently encountered and dominant items in both fecal and rejecta/dropped samples, followed mostly by other figs and mulberries in the former, but by larger-seed non-Moraceae plants in dropped samples. Our results suggest that for conservation of flying foxes undisturbed forests providing an adequate resource basis are of major importance.
    Keywords: abundance ; bats ; Chiroptera ; diet ; figs ; frugivores ; habitat
    Repository Name: National Museum of Natural History, Netherlands
    Type: info:eu-repo/semantics/article
    Format: application/pdf
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 11 (1999), S. 862-874 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the present study we take a fresh look at a laminar flow evolving into a larger channel through a step configured in a backward-facing format. We conduct steady three-dimensional Navier–Stokes flow analysis in the channel using the step geometry and flow conditions reported by Armaly et al. This allows a direct comparison with the results of physical experiments, thus serving to validate the numerical results computed in the range of 100≤Re≤1000. Results show that there is generally excellent agreement between the present results and the experimental data for Re=100 and 389. Fair agreement for Re=1000 is also achieved, except in the streamwise range of 15≤x≤25. The main difference stems from the fact that the roof eddy is not extended toward the midspan in the channel with a span width 35 times of the height of the upstream channel. In the present study we also reveal that the flow at the plane of symmetry develops into a two-dimensional-like profile only when the channel width is increased up to 100 times of the upstream step height for the case with Re=800. The present computational results allow the topological features of the flow to be identified using critical point theory. The insight thus gained is useful in revealing a mechanism for the development of an end-wall-induced three-dimensional vortical flow with increasing Reynolds number. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4110-4112 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synchrotron radiation photoemission spectroscopy has been used to study thermal SiO2/Si(100) interfaces. Oxides were grown at 700 °C and were then post-annealed at higher temperatures. Various Si oxidation states Si+x (x represents the oxidation state) at the interface were detected from Si 2p core level measurements. The results show that the amount of both Si+3 and Si+2 increases while that of Si+1 remains constant as a function of anneal temperature. It is also found that the peak width of the substrate Si 2p increases with increasing anneal temperature. This is attributed to the disordering of substrate Si atoms adjacent to the interface. The above results are interpreted in terms of anneal-induced structural relaxation to reduce the long-range strain on both sides of the interface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6858-6864 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface roughness was determined by x-ray diffraction for Ge films on Ge(001) grown by molecular beam epitaxy at room temperature. The truncation rod intensities and transverse-scan line profiles were measured as a function of perpendicular momentum transfer. Depending on the initial morphology of the surface, the same growth condition resulted in very different surface morphologies. Two types of initial surfaces were used. One was an atomically flat surface with very large terraces. The other, characterized by a roughness exponent α=1, had a high density of steps. Deposition on the flat surfaces resulted in a fairly smooth surface, but with a graded crystalline density below the surface. Deposition on the α=1 surfaces resulted in a more jagged surface characterized by an increase in the average height–height correlation function and a final roughness exponent of α=1/2. Additional and complementary information about the surface structure was obtained by scanning tunneling microscopy observations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 861-863 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface chemistry and band bending of the ammonium sulfide-treated GaAs (100) surface has been studied using surface-sensitive synchrotron radiation photoemission spectroscopy. We find that the treatment leaves the GaAs surface terminated with roughly a monolayer of sulfur bonded to both As and Ga atoms. An n-type barrier height of 0.8 eV is measured. The thermal stability of the various chemical components is studied and various issues of the passivating mechanism are discussed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 985-987 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature (490 °C)GaAs epitaxial growth on (100) silicon by molecular beam epitaxy is reported in this letter. Silicon wafers were cleaned by spin-etch technique to passivate silicon surface with hydrogen, by which the conventional high-temperature ((approximately-greater-than)850 °C) oxide desorption step for pre-epitaxial substrate preparation is eliminated. The possibility of epitaxial growth on such a passivated surface to obtain good quality epitaxy is investigated. Epitaxial films are characterized by cross-sectional transmission electron microscopy (XTEM), plan-view transmission electron microscopy, and double crystal diffraction (DCD).
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 3127-3129 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of a Si(111)-(7×7) surface capped by a 200 A(ring) film of C60 was studied by grazing-incidence x-ray diffraction. The Si(111)-(7×7) reconstruction prepared in vacuum, including the loosely bonded "adatoms'' on the surface, is preserved under the C60 overlayer. This result illustrates that C60 can be used as an inert cap for surfaces and suggests potentially interesting applications in surface science research and electronic device engineering.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 820-822 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhanced growth of CoSi2 on epitaxial Si0.7Ge0.3 has been achieved with an interposing amorphous-Si (a-Si) layer. The a-Si layer was used as a sacrificial layer to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming CoSi2 on Si0.7Ge0.3 grown by molecular beam eptiaxy. The process promises to be applicable to the fabrication of high-speed Si–Ge devices. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface morphological and compositional evolution during the initial stages of Si growth on Ge(001)2×1 by cyclic gas-source molecular beam epitaxy from Si2H6 has been investigated using in situ reflection high-energy electron diffraction (RHEED), Auger electron spectroscopy, electron-energy-loss spectroscopy, and scanning tunneling microscopy, combined with post-deposition high-resolution cross-sectional transmission electron microscopy. The layers were deposited using repetitive cycles consisting of saturation Si2H6 dosing at room temperature, followed by annealing for 1 min at 550 °C. Film growth was observed to proceed via a mixed Stranski–Krastanov mode. Single-step-height two-dimensional growth was obtained for nominal Si deposition thicknesses tSi up to (approximately-equal-to)1.5 monolayers (ML). However, the upper layer remained essentially pure Ge which segregated to the surface through site exchange with deposited Si as H was desorbed. At higher tSi, the Ge coverage decreased slowly, the surface roughened, and two-dimensional multilayer island growth was observed for tSi up to (approximately-equal-to)7.5 ML, where bulk reflections in RHEED patterns provided evidence for the evolution of three-dimensional island formula.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 69 (1965), S. 2715-2719 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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