ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We have investigated the influence of several growth parameters on the incorporation ofdoping species in the case of 3C-SiC layers grown by CVD on silicon. This includes nitrogen (bothintentional and residual) as well as residual aluminum. All concentrations have been determined bySIMS (Secondary Ion Mass Spectrometry). First, we investigated the effect of the growthtemperature, growth rate and C/Si ratio on the doping level of (100) oriented layers. Then, wecompared the change in nitrogen incorporation versus nitrogen flow rate for layers grown on (100),(111), (110) and (211) oriented wafers
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.207.pdf
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