ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We investigate the possibility of controlling formation of stacking faults (SFs) at theinterface region by implanting the 4H-SiC substrate with low-energy antimony ions (75 keV Sb+)prior to conventional CVD growth of the homoepitaxial layers. This approach is based on the solidsolutionhardening concept, according to which interaction of impurity atoms with dislocationsmakes the motion of the latter more difficult. Photoluminescence imaging spectroscopy is employedto investigate incorporation of Sb+ implants at the buried interface and also to assess its impact onstructural degradation. Spectral results are analyzed considering both the onset of n-type doping andirradiation damage. The latter factor was estimated separately from supplementary measurements ofhigh-energy (2.5 MeV H+) proton-irradiated 4H-SiC epilayers. We compare results of opticallystimulated SF formation in virgin and Sb implanted regions and provide a comprehensive picture ofthe defect evolution, including microscopic details of the imminent nucleation sites
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.395.pdf
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