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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 54 (1989), S. 5424-5426 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 776-778 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputtered spin valve heterostructures of NiFeCo/Cu/NiFeCo/FeMn were prepared to examine the effect of the argon sputtering pressure on the interlayer coupling between two ferromagnetic layers. The coupling strength was found to be closely related to the argon sputtering pressure. As the argon sputtering pressure is varied from 6 to 1 mTorr, the coupling field is reduced from 13.6 to 0.5 Oe. In particular, the sample deposited at 1 mTorr exhibits a coupling field of 0.5 Oe and a resistance change of 1.7% for the field step of 0.1 Oe leading to a sensitivity as large as 17% Oe. The reduced interlayer coupling is attributed to the modified topography of NiFeCo/Cu/NiFeCo interfaces. Atomic force microscope analyses support the dominant role of a topography-related effect in reducing the interlayer coupling strength. © 1997 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1249-1251 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mechanism on the formation of two-dimensional electron gas (2DEG) at the interface of undoped AlxGa1−xN with undoped GaN was interpreted through surface band bending observed using synchrotron radiation photoemission spectroscopy. The surface Fermi level was independent of AlxGa1−xN thickness and Al content in AlxGa1−xN, showing Fermi pinning to surface states at 1.6 eV below conduction band minimum. Oxygen donor impurities in undoped AlxGa1−xN, unintentionally doped during the growth, led to the formation of large density of 2DEG (〉∼1013/cm3) at the AlxGa1−xN/GaN interface via electron generation. © 2002 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2015-2017 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A room-temperature Ti/Al Ohmic contact on n-type GaN was obtained by surface treatment using Cl2 inductively coupled plasma treatment. The specific contact resistivity was dramatically decreased from the Schottky behavior to 9.4×10−6 Ω cm2 by the treatment. The binding energy of the Ga–N bond and the atomic ratio of Ga/N were simultaneously increased after the plasma treatment. This provides evidence that N vacancies, acting as donors for electrons, were produced at the etched surface, resulting in a shift of the Fermi level near to the conduction band. This leads to the reduction in contact resistivity through the decrease of the Schottky barrier for the conduction of electrons. © 2001 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 744 (1994), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A ceramic plasma-coating method that reduces damage from particle impact in a ceramic material is suggested. A steel-ball impact test was performed to investigate and compare the damage behavior of uncoated and ceramic-coated glass. Cone and lateral crack lengths were compared and damage volume analyzed and compared for different steel-ball diameters and types of coating materials, Al2O3-TiO2, Al2O3, and Cr2O3. Damage resistance of the coating and Al2O3-TiO2 was found to be best because of its mechanical properties and microstructure.
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  • 7
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 159 (1947), S. 602-603 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] WE are indebted to Ivanov1,2, Walton3,4, and Hammond5 for the demonstration that mammalian spermatozoa can be kept at low temperature for some length of time without loss of fertilizing capacity. These observations gave rise to the new technique of ...
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Optical and quantum electronics 30 (1998), S. 133-140 
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The modified switching conditions of directional coupler optical switches, in the presence of parasitic couplings in bending sections, are discussed by means of the coupled mode theory. As expected, a parallel section's length needs to be adjusted by less than the coupling length lc (=pi/2kappa0), depending on the amount of parasitic coupling. For weak parasitic coupling, however, the switching voltage does not need to be altered but maintains the same value as without parasitic coupling.
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Journal of polymer research 6 (1999), S. 231-236 
    ISSN: 1572-8935
    Keywords: Polyacrylamide ; Dodecylbenzenesulfonic acid ; Complex ; Mesomorphic structure ; Undulated lamellae
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The solid-state complexes of a flexible polymer, polyacrylamide (PAA), and an amphiphilic surfactant, dodecylbenzenesulfonic acid (DBSA), have been investigated. Complexation between PAA and DBSA occurred via proton transfer from DBSA to the carbonyl group in PAA, giving rise to a “supramolecular comb-like polymer” with ionic bonding. The mesomorphic phase in the complexes was identified by the birefringent patterns under polarized optical microscopy. Wide angle X-ray diffraction (WAXD) and small-angle X-ray scattering (SAXS) revealed that the complexes microphase separated into a lamellar morphology consisting of alternating polar and nonpolar layers with the long period of ca. 3 nm. As the composition x (the average number of DBSA molecules bound with a PAA repeating unit) ≥ 0.7, the SAXS profiles were characterized by a major scattering peak associated with the flat lamellar structure. Multiple scattering peaks were observed at lower degree of complexation (x ≤ 0.6), which were ascribed to the formation of undulated lamellae that organized into a macrolattice with the diffraction patterns observable by SAXS. Preliminary assignments of the lattice planes suggested that the lobes of the undulated lamellae organized into body centered cubic (bcc) or simple cubic (sc) types of unit cell. The glass transition temperature of the polar layers in PAA(DBSA) complexes increased with increasing degree of complexation owing to the stiffening of polymer chains. Complexation with DBSA also enhanced the thermal stability of PAA, where the thermal decomposition temperature can be raised by as much as 35 °C.
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 875-878 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: This paper describes magnetron reactive ion etching (RIE) characteristics of polycrystalline(poly) 3C-SiC thin films grown on thermally oxidized Si substrates by atmosphericpressure chemical vapor deposition (APCVD). The best vertical structures were obtained by theaddition of 40 % O2, 16 % Ar, and 44 % CHF3 reactive gas at 40 mTorr of chamber pressure. Stableetching was achieved at 70 W and the poly 3C-SiC was undamaged. These results show that in amagnetron RIE system, it is possible to etch SiC with lower power than that of the commercial RIEsystem. Therefore, poly 3C-SiC etched by magnetron RIE has the potential to be applied tomicro/nano electro mechanical systems (M/NEMS)
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