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  • 1
    Electronic Resource
    Electronic Resource
    Resonant level lifetime in GaAs-AlAs double-barrier structures including Γ-X mixing (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8387-8391 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantitative model for calculation of the lifetime of quasibound states, including the Γ-X transfer, in a AlAs-GaAs-AlAs double-barrier structure is presented. When device is designed that a Γ-like energy level approaches to an X-like energy level, anticrossing of the Γ-X transition occurs and the lifetime of the state can be several orders larger than that of a pure Γ system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348923
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  • 2
    Electronic Resource
    Electronic Resource
    Molar fraction and substrate orientation effects on carbon doping in InGaAs grown by solid source molecular beam epitaxy using carbon tetrabromide (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4281-4284 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon incorporation in InGaAs and GaAs is systematically studied in solid-source molecular beam epitaxy (MBE) as a function of carbon tetrabromide pressure, indium molar fraction, and substrate orientation. The maximum attainable free carrier concentration in GaAs and InGaAs lattice matched with InP was 2×1020 cm−3. The etching effect of CBr4 on growth rate reduction, surface morphology, and growth mechanism is clarified. A comparative study of carbon incorporation as function of substrate orientation and polarity was undertaken by the growth of GaAs and In0.53Ga0.47As on (n11)A and B (n=2, 3, 5) and (100) oriented substrates. Free carrier concentration and mobility measurements showed no carbon autocompensation in GaAs but strong amphoteric behavior for In0.53Ga0.47As grown on arsenic terminated planes. Measurement of hole concentration as function of indium molar fraction in InxGa1−xAs shows that carbon tetrabromide can be used as an effective acceptor doping percursor for indium molar fraction x less than 80% in solid-source MBE. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368646
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  • 3
    Electronic Resource
    Electronic Resource
    A mild electrochemical sulfur passivation method for GaAs(100) surfaces (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2764-2766 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a mild electrochemical sulfurization technique which can form a very thick sulfide layer on GaAs(100) surface. This sulfide layer is quite stable in air. The photoluminescence spectrum of such anodic sulfurized GaAs surface shows a large intensity enhancement as compared with that of as-etched GaAs samples. No visual intensity decay occurs under the laser beam illumination after the sample has been maintained in air for more than seven months. The structure and composition of the passivation layers are investigated by x-ray photoelectron spectroscopy and the mechanism of layer formation is discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360074
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  • 4
    Electronic Resource
    Electronic Resource
    S2Cl2 treatment: A new sulfur passivation method of GaAs surface (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3425-3427 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a new sulfur passivation method—S2Cl2 treatment, which is quite effective for removing the surface oxide layer of GaAs and passivating the surface with monolayer thick sulfides. Photoluminescence (PL) spectroscopy, Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy (XPS) are used to study the passivated GaAs (100) surfaces. The results of PL reveal that the PL intensity increases by two orders of magnitude, which is indicative of the reduction of surface recombination velocity of GaAs by this treatment. AES data prove that the sulfurized surface contains S, Ga, As, C, and small amount of Cl atoms but no oxygen signal at all. XPS study shows that sulfur atoms bond to both Ga and As atoms more effectively on S2Cl2 treated surfaces than those passivated by (NH4)2Sx.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111261
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  • 5
    Electronic Resource
    Electronic Resource
    Electrochemical sulfur passivation of GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2252-2254 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An anodic sulfurized treatment of GaAs has been developed to passivate its surfaces preventing oxidation. The photoemission core level spectra show that the surface Ga and As atoms are bonded to S atoms to form a thick sulfurized layer. No oxygen uptakes on the sulfurized GaAs surface as illustrated by the high resolution electron energy loss spectroscopy. The results of photoluminescence spectra verify that the passivated surface has low surface recombination velocity and can protect the photoassisted oxidation under laser illumination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107475
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  • 6
    Electronic Resource
    Electronic Resource
    Raman scattering characterization of the crystalline qualities of ZnSe films grown on S-passivated GaAs(100) substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2043-2045 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparative study of the Raman spectra of ZnSe films grown by molecular beam epitaxy on GaAs(100) substrates passivated by NH4)2)Sx and S2Cl2 solutions is presented. Based on the analysis of the line shape of the first-order longitudinal-optical phonon of ZnSe with spatial correlation model of Raman scattering, it is shown that the ZnSe films grown on the GaAs substrates passivated by S2Cl2 solutions have longer coherence lengths, which indicate that their crystalline qualities are better than those passivated by NH4)2Sx solutions. In addition, the barrier heights of ZnSe/GaAs interfaces for different S passivations have been obtained from the ratios of the intensity of the coupled longitudinal-optical phonon-plasmon mode to that of the longitudinal-optical mode of GaAs Raman peak. The results show that the ZnSe/GaAs samples passivated by S2Cl2 solutions have lower density of interfacial states. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115072
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  • 7
    Electronic Resource
    Electronic Resource
    Preparation and photoluminescence of alumina membranes with ordered pore arrays (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2951-2953 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Porous alumina membranes with ordered pore arrays were prepared electrochemically from Al metal in C2H2O4 or H2SO4. Photoluminescence (PL) measurements show that a blue PL band occurs in the wavelength range of 400–600 nm. This band originates from singly ionized oxygen vacancies (F+ centers) in porous alumina membranes. Tentative reasons for the changes in intensity and peak position of the PL band with increasing heat-treatment temperature are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123976
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  • 8
    Electronic Resource
    Electronic Resource
    COUPLING BETWEEN 2-D ELECTRONS IN QUANTUM WELLS AND 3-D PHONONS (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 581 (1990), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1990.tb22717.x
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  • 9
    Electronic Resource
    Electronic Resource
    Moisture Sorption Isotherms of Canola Meals, and Applications to Packaging (1996)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 61 (1996), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Moisture sorption isotherms were determined for defatted canola meal at 16, 22, and 34°C. The isotherms were fitted to the Guggenheim-Anderson-deBoer (GAB) sorption equation. This equation was then used to develop a packaging model that predicted the changes of moisture con-tent of canola meal under stated environmental and packaging conditions. The model was tested using Melinex 813 (12 μm) and Propafilm C (28 μm) packaging films at 86% relative humidity and 23°C. The GAB equation provided a good fit to experimental data (〈3% RMS). The monolayer moisture content of the meal was 9.5%. The enthalpy of sorption of the monolayer at 22°C was 84.61 KJ/mol. The model predicted the time required by packaged canola to attain a selected moisture content ± 0.5 days.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1996.tb14760.x
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  • 10
    Electronic Resource
    Electronic Resource
    Model for Gelatinization of Wheat Starch in a Twin-Screw Extruder (1993)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 58 (1993), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Wheat starch was processed in a co-rotating twin-screw extruder, at moisture contents 25% and 30%, screw speeds 200 and 300 rpm, feed rate 30 kg/hr, and barrel temperature settings 100, 120, 140, and 160°C. Degree of starch gelatinization at each point along the extruder channel was determined by sampling and analyzing material inside the extruder. Kinetics of the gelatinization during extrusion was investigated. A first-order rate equation was developed to predict degree of starch gelatinization during extrusion. The rate constant was a function of both temperature and shear stress.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1993.tb09380.x
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