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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4313-4318 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interfacial reaction in Ni and amorphous Si (a-Si) multilayers (Ni/a-Si) has been studied. Transmission electron microscope observation was used to monitor the progress of the solid-state reaction. It was found that amorphous Ni-silicide phase [a-(Ni,Si)] is the first phase formed in the Ni and a-Si interfacial reaction. A relatively large composition range for the amorphous phase exists in these Ni/a-Si multilayers. In the as-deposited Ni/a-Si multilayers with shorter modulation period, the uniform a-(Ni,Si) phase forms at least in the composition range of 25–62 at. % Ni. These results are consistent with predictions from the calculated Gibbs free-energy diagram. The δ-Ni2Si phase is the preferred phase in the crystallization process of a-(Ni,Si) even for the equiatomic Ni/a-Si multilayers. The mechanism that controls phase selection in the Ni/a-Si interfacial reaction is discussed using nucleation theory. A nucleation control model for phase selection is proposed.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 149-152 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction, photoemission, and Auger electron spectroscopy studies are reported of the interactions between the interface of titanium and C60 solid film during low-temperature annealing. The structure of C60 at the Ti/C60 interface is disrupted by the Ti atoms when Ti is deposited onto the surface of C60 film. Titanium atoms react with carbon atoms to form amorphous Ti carbide during low-temperature annealing. This interaction is related to the solid state amorphization reaction of the deposited Ti layer with C60 film, which occurs with a driving force of a negative heat of formation in the Ti–C system and a dominant diffusion of carbon into the Ti overlayer. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7217-7221 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interdiffusion-induced solid-state amorphization reaction (SSAR) in polycrystalline Ni/amorphous Si multilayers has been studied using an in situ x-ray diffraction technique together with transmission electron microscope observations. The amorphization reaction was found to occur both on the Ni/Si interfaces in terms of a planar-layer growth model and along the grain boundaries in the Ni sublayers. Thermodynamic and kinetic interpretations for the SSAR at grain boundaries are presented and an amorphous growth model is also suggested for elucidating the SSAR in polycrystalline Ni/amorphous Si multilayers.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1578-1584 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied interfacial reactions in Co/amorphous Si(a-Si) multilayers by transmission electron microscopy. We found that an intermixed layer of amorphous cobalt silicide formed in the as-deposited state. To explain the solid-state amorphization reaction, two parameters were used. They were the thermodynamic driving force (heat of formation) and the interfacial energy. The initial amorphization reaction in Co/a-Si multilayers was thermodynamically and kinetically favored. However, the formed amorphous interlayer remained about 1 nm thick and did not grow thicker with increasing modulation period and annealing temperature. The reason for this phenomenon was that the amorphous interlayer acted as a diffusion barrier to impede the amorphization reaction in Co/a-Si multilayers. Co2Si phase was always the preferred phase in the crystallization process for different average compositions of the multilayers. The mechanism that controlled the phase selection in Co/a-Si interfacial reaction was interpreted by using the model of modified heat of formation.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2471-2474 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Little is known about the interdiffusion in the amorphous Ni–Si multilayer due to the lack of suitable experimental method. In this paper, the interdiffusion phenomena in the amorphous Ni–Si multilayer are investigated by an in situ x-ray diffraction technique. The temperature-dependent interdiffusivity obtained by monitoring the decay of the first-order modulation peak as a function of annealing time can be described in terms of the Arrhenius relation. The effective interdiffusivities can be expressed as De(T)=2.13 ×10−17 exp[−(0.61±0.02)/kBT] m2/s (423–613 K). A retarded interstitial diffusion mechanism is suggested to explain the diffusion process in the amorphous multilayer films.
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  • 6
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1147-1149 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Acoustic velocities of Pd39Ni10Cu30P21 bulk metallic glass (BMG) are measured by an ultrasonic technique upon annealing. The elastic constants and the Debye temperature are obtained. A large softening of the transverse phonon is exhibited in the as-quenched BMG relative to its crystallized state. Upon crystallization, the shear modulus and the Debye temperature increase by ∼30% and ∼12%, respectively; however, the density increases by only ∼0.6%. Some anomalous acoustic and elastic behaviors are observed near the glass transition temperature and in the supercooled liquid region of the BMG. The anomalies are explained with regard to the structural changes. © 2000 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2874-2876 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reversible phase transition between amorphous and crystalline in bulk metallic glass (BMG) Zr41.2Ti13.8Cu12.5Ni10Be22.5 has been investigated under high pressure at room temperature. The BMG displayed a structure memory under high pressure as detected by in situ synchrotron radiation of x-ray diffraction and resistance measurement in a diamond anvil cell. Direct experimental observations found that the crystallization of the BMG occurred at 24 GPa on uploading and the crystalline phase reverted back to the amorphous state during downloading. This unusual phenomenon was discussed thermodynamically. © 2000 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 974-976 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lateral thermal wet oxidization of the AlAs layer in a GaAs/AlAs/GaAs sandwiched structure is studied by Raman spectroscopy and Nomarski microscopy. A significant improvement in thermal stability of the oxidized AlAs layer has been achieved by optimizing the oxidation conditions, which can be used to fabricate reliable devices. We show that the thermal stability is strongly related to the removal of volatile products, such as As and As2O3, as evidenced by the Raman spectroscopy measurement. © 2002 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3734-3736 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pressure-dependent acoustic velocities of a Pd39Ni10Cu30P21 bulk metallic glass (BMG) have been measured up to 0.5 GPa by using an ultrasonic technique with the pulse echo overlap method. The elastic constants, the Debye temperature, and their pressure dependence are obtained. The isothermal equation of state (EOS) of the BMG is established in terms of the Murnaghan form. The atomic configurations of the BMG are discussed by comparing the elastic constants and the EOS with those of its metallic component and of other amorphous materials. © 2000 American Institute of Physics.
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