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  • 1
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    First insights into the evolutionary history of the Davallia repens complex (2014)
    In:  Blumea - Biodiversity, Evolution and Biogeography of Plants (0006-5196) vol.59 (2014) nr.1 p.49
    Details
    Publication Date: 2015-03-06
    Description: Davallia repens and its close relatives have been identified as a species complex in this study because of the existence of continuously morphological variation. To decipher its evolutionary history, integrated methodologies were applied in this study including morphology, cytology, reproductive biology and molecular phylogeny. Analysis of morphological characters reveals several important discriminating characteristics, such as the shape of stipe scales, frond and indusium. Both diploid and polyploid forms are present in the complex and reproduce sexually and by apogamy, respectively. The incongruence between cpDNA and nDNA phylogeny indicates a hybrid origin for most polyploid individuals. Based on the present results, we hypothesize that there were at least two ancestral lineages distributed in the Malesian region. Through hybridization, polyploidization and apogamy, some polyploid genotypes dispersed outwards to shape the extant distribution.
    Keywords: Apogamy ; Davallia repens ; hybridization ; polyploidization
    Repository Name: National Museum of Natural History, Netherlands
    Type: Article / Letter to the editor
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  • 2
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    First insights into the evolutionary history of the Davallia repens complex (2014)
    In:  Blumea: Biodiversity, Evolution and Biogeography of Plants vol. 59 no. 1, pp. 49-58
    Details
    Publication Date: 2024-04-10
    Description: Davallia repens and its close relatives have been identified as a species complex in this study because of the existence of continuously morphological variation. To decipher its evolutionary history, integrated methodologies were applied in this study including morphology, cytology, reproductive biology and molecular phylogeny. Analysis of morphological characters reveals several important discriminating characteristics, such as the shape of stipe scales, frond and indusium. Both diploid and polyploid forms are present in the complex and reproduce sexually and by apogamy, respectively. The incongruence between cpDNA and nDNA phylogeny indicates a hybrid origin for most polyploid individuals. Based on the present results, we hypothesize that there were at least two ancestral lineages distributed in the Malesian region. Through hybridization, polyploidization and apogamy, some polyploid genotypes dispersed outwards to shape the extant distribution.
    Keywords: Apogamy ; Davallia repens ; hybridization ; polyploidization
    Repository Name: National Museum of Natural History, Netherlands
    Type: info:eu-repo/semantics/article
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  • 3
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    A new species of Chingia (Thelypteridaceae) from Vanikoro, Solomon Islands (2021)
    Naturalis Biodiversity Center
    In:  Blumea: Biodiversity, Evolution and Biogeography of Plants vol. 66 no. 3, pp. 223-226
    Details
    Publication Date: 2024-05-03
    Description: A new species of Chingia, known only from Vanikoro in the Solomon Islands, is described and illustrated. It is distinctive in having flat, thickened, tortuous stipe scales. It is most closely related to an accession of Chingia clavipilosa from Mount Kinabalu, from which it is distinguished by its lack of hyaline acicular hairs on the abaxial laminar axes. Other Chingia species in the Solomon Islands are distinguished by having abundant stiff, terete stipe scales.
    Keywords: Plant Science ; Ecology ; Evolution ; Behavior and Systematics ; Chingia ; endangered species ; endemic ; fern ; Papuasia ; Solomon Islands ; Thelypteris
    Repository Name: National Museum of Natural History, Netherlands
    Type: info:eu-repo/semantics/article
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  • 4
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    Asplenium alleniae (Aspleniaceae), a new fern species from Borneo and New Guinea (2021)
    Naturalis Biodiversity Center
    In:  Blumea: Biodiversity, Evolution and Biogeography of Plants vol. 65 no. 3, pp. 219-223
    Details
    Publication Date: 2024-06-06
    Description: A new species, Asplenium alleniae, is described from high elevation habitats in Sabah (Malaysia) and Papua New Guinea. Previous phylogenetic analyses of chloroplast loci determined that A. alleniae was most closely related to A. pauperequitum from New Zealand. Asplenium alleniae differs from A. pauperequitum most obviously by the acuminate apices of its longer pinnae. The combination of pinnate fronds with few pairs of primary pinnae and dark red-brown axes distinguishes A. alleniae from superficially similar species of Asplenium in Malesia. Asplenium alleniae is provisionally assessed as Endangered.
    Keywords: Plant Science ; Ecology ; Evolution ; Behavior and Systematics ; conservation ; Malaysia ; Malesia ; Mount Kinabalu ; Papua New Guinea ; Sabah ; taxonomy
    Repository Name: National Museum of Natural History, Netherlands
    Type: info:eu-repo/semantics/article
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  • 5
    Electronic Resource
    Electronic Resource
    Ratio matching. Comments (1974)
    s.l. : American Chemical Society
    Analytical chemistry 46 (1974), S. 1876-1878 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60348a010
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  • 6
    Electronic Resource
    Electronic Resource
    Study and improvement of anomalous interface states of metal-oxide-semiconductor structures induced by rapid thermal post-oxide annealing (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5038-5042 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anomalous interface states were caused by post-oxide rapid thermal annealing in an n+ polycrystalline silicon metal-oxide-semiconductor capacitor. These anomalous interface states have been investigated using high/low frequency capacitance/gate voltage (C/V) measurements. An additional annealing process (450 °C, 30 min in 90% N2/10% H2 mixed gas) was found to improve the anomalous interface states. The improved results were identified using a constant current injection stress test.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353774
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of rapid thermal annealing on gate induced drain leakage in a n-channel metal-oxide-semiconductor field effect transistor (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3058-3059 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Significant gate induced drain leakage caused by post-oxide rapid thermal annealing (RTA) was studied in this letter in comparison with the non-RTA process for n-channel metal-oxide- semiconductor field effect transistor. It is found that the sub-breakdown leakage increases with increasing RTA temperature. We proposed that interface states and recombination centers generated after RTA are the dominant factors in the enhancement of the leakage current. In addition, it is found that RTA has no effect on the avalanche breakdown voltage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110257
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  • 8
    Electronic Resource
    Electronic Resource
    Extra interface state generation enhanced by fluorine in tungsten-polycided metal-oxide-semiconductor devices with nitrided oxide gate dielectric (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1456-1458 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interface state generation in oxynitride gate dielectric devices with tungsten-polycide (W-polycide) and polycrystalline silicon (poly-Si) gate structures were investigated. A significant amount of fluorine-induced interface states were detected in W-polycide gate device with nitridation of thermal gate oxide by both the charge pumping technique and capacitance/gate voltage (C/V) measurement. Re-oxidation of oxynitride gate oxide results in partial annealing of these interface states. A model of the fluorine induced strain gradient between silicon dioxide and silicon (SiO2/Si) interface was proposed to explain the extra interface state generation mechanism. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114493
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  • 9
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing and the anomalous threshold voltage shift of metal-oxide-semiconductor structure in n+ polycrystalline silicon gate complementary metal-oxide-semiconductor technology (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 447-449 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An anomalous different threshold voltage shift between P-channel metal-oxide-semiconductor field effect transistor (P-MOSFET) and N-channel MOSFET under high temperature rapid thermal annealing (RTA) borophosphosilicate glass reflow has been studied using 1 μm n+ polygate complementary MOS technology. The boron transient enhanced outdiffusion and phosphorus pileup at channel surface, as well as the interface states generated due to the degradation of thin gate oxide under high RTA process, are proposed as the main sources of this anomalous shift. A detailed model is proposed to interpret the mechanism and some methods to solve the anomalous shift are suggested.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107910
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  • 10
    Electronic Resource
    Electronic Resource
    Electronic structure of the ferroelectric layered perovskite SrBi2Ta2O9 (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1704-1706 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The band structure of the layered perovskite SrBi2Ta2O9 (SBT) was calculated by tight binding and the valence band density of states was measured by x-ray photoemission spectroscopy. We find both the valence and conduction band edges to consist of states primarily derived from the Bi–O layer rather than the perovskite Sr–Ta–O blocks. The valence band maximum arises from O p and some Bi s states, while the conduction band minimum consists of Bi p states, with a wide band gap of 5.1 eV. It is argued that the Bi–O layers largely control the electronic response whereas the ferroelectric response originates mainly from the perovskite Sr–Ta–O block. Bi and Ta centered traps are calculated to be shallow, which may account in part for its excellent fatigue properties. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118003
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