Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
64 (1988), S. 3290-3292
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The sheet resistance, Hall mobility, and carrier concentration as a function of He ion dose have been measured across the In1−x−yGaxAlyAs system. Starting with heavily doped n-type epitaxial layers (n∼1018 cm−3), except for the lowest band-gap constituent In0.53Ga0.47As, the sheet resistance can be increased more than five orders of magnitude for He doses above 2.5×1013 cm−2. For the other constituents, the sheet resistance can be made high enough and sufficiently thermally stable to be potentially useful for device applications.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.341520
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