ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Carrier transport properties of AlGaN/GaN heterostructures have been analyzed with thequantitative mobility spectrum analysis (QMSA) technique. The nominally-undopedAl0.15Ga0.85N/GaN sample was grown by metal-organic vapor phase epitaxy. Variable-magneticfieldHall measurements were carried out in the temperature range of 4-160 K and magnetic fieldrange of 0-6.6 T. QMSA was applied to the experimental variable-field data to extract theconcentrations and mobilities associated with the high-mobility 2DEG and the relatively lowmobilitybulk electrons for the temperature range investigated. For temperatures below 100 K thecalculated mobility and carrier density values were close to the experimental results. No bulkconduction was observed in this temperature range. At 160 K, QMSA results show that parallelconduction in 3 mm thick GaN layer started to affect the average electron mobility
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1533.pdf
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