ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Vertical-cavity surface emitting lasers (VCSELs) were grown by molecular beam epitaxy over openings in a SiN4 mask, deposited on a GaAs wafer. We obtained ready to use lasers and laser arrays, laterally defined by the polycrystalline, highly resistive material grown over the SiN4 laser. The performance of the lasers (e.g., 20×20 μm2 by size) were similar to that of VCSELs defined by post growth processing methods. Special transverse modes characteristics and a well defined polarization were observed in square shaped lasers and it was attributed to selective growth induced anisotropy. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117451
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