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  • 1
    Electronic Resource
    Electronic Resource
    Current heating in polymer light emitting diodes (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 732-734 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an investigation of current-induced heating in polymer light emitting diodes. Using short electrical pulse measurements, we were able to quantify the temperature rise in the active region. We consider that heating effects play a major role in limiting the maximum efficiency of devices and in initiating degradation mechanisms. Heating and heat sinking are also discussed in the context of electrically pumped polymer lasers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121983
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  • 2
    Electronic Resource
    Electronic Resource
    Role of optical properties of metallic mirrors in microcavity structures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2825-2829 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In thin metal films the phase change on reflection of incident light is dependent on the wavelength, the angle of incidence, the type of metal, and the metal thickness. These properties have been exploited to improve the performance of planar metal mirror microcavities. We model substantial alteration of peak emission wavelength and linewidth with mirror thickness. This allows the tuning of the cavity resonance wavelength by variation of metal mirror thickness. The dependence of the phase change on wavelength and angle of incidence can also be used to suppress the angular dependence of the cavity resonance wavelength. These effects are observed in silver-mirrored cavities containing the polymers poly(p-phenylene vinylene), (PPV), and a cyano-substituted derivative of PPV, MEH-CN-PPV. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363940
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  • 3
    Electronic Resource
    Electronic Resource
    Transient electroluminescence of polymer light emitting diodes using electrical pulses (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5116-5130 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed experimental and theoretical analysis of the pulsed excitation of polymer light emitting diodes is presented. We find a set of universal transient features for a variety of device configurations (different polymers/cathodes) which can be reproduced using our phenomenological numerical model. We find that the temporal evolution of the electroluminescence in response to a step voltage pulse is characterized by: (i) a delay followed by; (ii) a fast initial rise at turn-on followed by; (iii) a slow rise (slower by at least one order of magnitude). The large mobility mismatch between holes and electrons in conjugated polymers allows us to separately time resolve the motion of holes and electrons. We suggest a method for extracting mobility values that takes into account the possible field-induced broadening of carrier fronts, and which is found to be compatible with mobilities determined from constant wave measurements. By using appropriate device configurations it is possible to determine the mobilities of both holes and electrons from a single device. Mobilities for holes and electrons are extracted for a poly(p-phenylenevinylene) copolymer and poly(di-octyl fluorene). © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371488
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  • 4
    Electronic Resource
    Electronic Resource
    Structures of polymer field-effect transistor: Experimental and numerical analyses (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 151-153 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We compare two basic organic field-effect transistor structures both experimentally and theoretically. By using time-resolved analysis, we gain insight into the mechanisms affecting the performance of these structures. Using a two-dimensional numerical model, we focus on the top contact structure and analyze the difference between the two structures. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1431691
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  • 5
    Electronic Resource
    Electronic Resource
    Two-dimensional simulation of polymer field-effect transistor (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2987-2989 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-dimensional simulation of intrinsic top-contact field-effect transistor is presented. The simulated structure is unique to organic transistors and hence is most relevant. By time resolving the operation of such a transistor, the mechanisms underlying its operation are resolved. The effect of this device configuration on the measured "intrinsic" material properties is also discussed and shown to explain previously reported features. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415374
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  • 6
    Electronic Resource
    Electronic Resource
    Transport and optical modeling of organic light-emitting diodes (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1897-1899 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present detailed theoretical modeling of organic light-emitting diodes. We incorporate both optical and electrical modeling into one and thus achieve a more comprehensive picture of the device operation. The importance of including the exciton generation and emission rate in a transport model is highlighted and we find that in such devices the charge recombination zone is not necessarily identical to the exciton emission zone. Moreover, both the electrical and optical structure affect the exciton density distribution and thus also the externally measured light. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1310630
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  • 7
    Electronic Resource
    Electronic Resource
    Analysis of the turn-off dynamics in polymer light-emitting diodes (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1137-1139 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present experimental techniques to analyze the electroluminescence (EL) of polymer light-emitting diodes following the removal of an applied voltage pulse. We explain the fast modulation of the EL intensity at turn-off in terms of the sudden reduction of the Langevin recombination rate, and extract the time evolution the device's internal electric field at the recombination zone during the application of a voltage pulse. The results are compared to, and found to be consistent with, those of simple numerical modeling. The subsequent long-lived EL tail is analyzed to give the time evolution of the carrier distributions at the recombination zone once the voltage pulse has been removed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125962
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  • 8
    Electronic Resource
    Electronic Resource
    Pulsed excitation of low-mobility light-emitting diodes: Implication for organic lasers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2764-2766 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a theoretical and experimental study of electrical pulsed excitation in polymer light-emitting diodes (LEDs). We find that the low mobility results in a relatively high charge density within an electrically pumped structure. The broad spectrum of the charge-induced absorption and its overlap with the ground-state absorption pose a significant barrier for achieving net gain and lasing. We suggest an approach that might circumvent this problem using suitable emitters and an appropriate driving scheme. We also suggest methods for ultrafast modulation of LEDs as well as direct determination of the space charge within the recombination zone. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124007
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  • 9
    Electronic Resource
    Electronic Resource
    Suppressed angular color dispersion in planar microcavities (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 556-558 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an improved microcavity design which allows the suppression of the viewing angle dependence of the color emitted by a planar device. This is demonstrated for luminescent conjugated polymer based cavities, for which the wavelength change is reduced from ∼60 to 10 nm at an angle of 60°. We introduce the concept of cavity optical length dispersion and suggest structures for which the wavelength change with viewing angle is reduced to 5 nm at a viewing angle of 60° irrespective of the emissive material. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118207
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  • 10
    Electronic Resource
    Electronic Resource
    Near-infrared contact mode collection near-field optical and normal force microscopy of modulated multiple quantum well lasers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2337-2339 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Contact near-field and far-field imaging of multiple quantum well (MQW) structures emitting at 1.54 μm is reported using bent normal force/near-field optical elements for simultaneous imaging of the light distribution, topography, and modulation of the normal force signal with laser modulation. Excellent registration and correlation of each of these images is reported. Alterations in the distribution of the light emission in going from the near to the far-field is detected in agreement with theoretical deductions. Nonetheless, differences are also noted in this light distribution from standard understandings. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115850
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