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  • 1
    Electronic Resource
    Electronic Resource
    Patterning method for silicides based on local oxidation (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3459-3461 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxidation of CoSi2 layers on Si(100) using oxidation masks has been investigated. It is shown that local oxidation can be used to pattern the silicide layer. This method allows the formation of buried interconnects and metallized silicon mesa structures. Epitaxial CoSi2 silicide layers were grown by molecular beam epitaxy on Si(100). The SiO2/Si3N4 oxidation mask was patterned photolithographically with linewidths of typically 1.5 μm. During thermal oxidation, SiO2 forms in the unprotected regions of the silicide layer. The silicide is pushed into the substrate in these regions. At a critical oxide thickness, the oxidized region of the silicide layer separates from the unoxidized, in conformance with the structure of the oxidation mask. The oxide capped silicide maintains its uniform layer structure and its single crystallinity in spite of the large shift into the substrate. The method should be applicable also to polycrystalline silicides, such as TiSi2. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115246
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  • 2
    Electronic Resource
    Electronic Resource
    An investigation of laser-induced fluorescence for measuring velocity distributions of neutral atoms using a CW dye laser (1984)
    Springer
    Applied physics 35 (1984), S. 83-93 
    Details
    ISSN: 1432-0649
    Keywords: 32.80 ; 42.60 ; 6.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The velocity distribution of evaporated Zr atoms has been measured by means of laser-induced fluorescence using a cw dye laser by scanning the laser line across the Doppler-broadened absorption line profile of the atoms. It is shown that the experimental data can be explained on the basis of an excitation theory for a three-level system developed from basic principles. It was calculated that the probability for an atom to be in the excited state mainly depends on the radiation-power density of the laser and on the residence time of the atom in the exciting laser light. It was found that the laser frequency must be well stabilized in order to meet the assumptions in the excitation calculation. Otherwise deviations to the theoretical predictions appear in the experimental results due to the jitter of the dye laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00697427
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  • 3
    Electronic Resource
    Electronic Resource
    Low energy selfsputtering yields of nickel (1978)
    Springer
    Applied physics 16 (1978), S. 147-150 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 Nc
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The selfsputtering yield of nickel has been measured by the mass change method for normal incidence in the energy region from 75eV–3.0keV. In this energy region the yield varies from 0.07–3.0atmos/ion. The results are discussed in view of their importance to the plasma-wall interaction in fusion devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00930378
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  • 4
    Electronic Resource
    Electronic Resource
    Energy transfer to a copper surface by low energy noble gas ion bombardment (1992)
    Springer
    Applied physics 55 (1992), S. 274-278 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The energy transferred to a copper surface by bombardment with Xe+, Ar+, and He+ ions with kinetic energies in the range 100–4000 eV has been studied by our group in previous experiments. There were significant experimental uncertainties for that data at energies below about 200 eV. The present investigation overlaps the previous work, extends the energy range to 10 eV, and includes data for Ne+. Particular emphasis is placed on the energy range below 200eV. A specially designed ion source was employed in these experiments. A polycrystalline copper film deposited onto a highly sensitive calorimeter was used as the target material. The results show that the Xe+ ion deposits more than 97% of its energy over the entire range investigated whereas the lighter ions deposit a decreasing fraction of their energy below about 1 keV. The decrease is largest for the lightest ion (He+). In all cases the deposited energy is about or more than 70% of the incident energy. It will be shown that the present results are in agreement with previous measurements for copper and are qualitatively in good agreement with computer calculations using the TRIM.SP code.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348397
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  • 5
    Electronic Resource
    Electronic Resource
    On the velocity distribution of excited Fe-atoms by sputtering of iron (1982)
    Springer
    Applied physics 29 (1982), S. 53-55 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 32.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract From the velocity distribution of excited sputtered particles detailed information on the excitation process can be obtained. In the present paper the first direct measurement of velocity distribution of excited atoms sputtered from a metal target is presented. The irradiation of the Fe-target was performed with 10keV Ar+-ions. The sputtered atoms were detected using pulsed laser induced fluorescence (LIF). The sputtered Fe atoms in the metastable statea 5 F 5 at 0.86 eV shows a much broader distribution, than found for the ground-state atoms, but no energy threshold, implied in the statistical excitation models, was found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00632425
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  • 6
    Electronic Resource
    Electronic Resource
    Transmission sputtering yields of gold at 6.8 MeV (1976)
    Springer
    Applied physics 11 (1976), S. 289-293 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The transmission sputtering yield of gold for 6.8-MeV Au– bombardment has been measured on targets of thicknesses from 250 to ∼ 7000 Å. The results are compared to Sigmund's theory and to recent calculations of deposited-energy depth distributions by Winterbon. Good agreement between experimental data and theory is found except for target thicknesses around 4000 Å, where the experimental yield rises by up to a factor two higher than predicted by theory. This discrepancy is interpreted in terms of collision spikes, which have been observed previously in backsputtering experiments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00897068
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  • 7
    Electronic Resource
    Electronic Resource
    Angular distribution and differential sputtering yields for low-energy light-ion irradiation of polycrystalline nickel and tungsten (1980)
    Springer
    Applied physics 21 (1980), S. 327-333 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 N
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Angular differential and total sputtering yields of polycrystalline nickel and tungsten have been measured for 1 and 4 keV H+ and 4 keV He+ ion bombardment at incidence angles between 0° and 80°. The differential sputtering yields (dY/dΩ) were determined with the aid of the collector technique, whereas the total yieldY was determined from the weight loss of the target during irradiation. Asymmetric angular distributions are observed at oblique angles of incidence, the emission maximum being shifted in forward direction (with respect to the incident ions). Even more pronounced than the change in shape of the emission distribution is an increase in the differential yield:dY/dΩ rises with increasing incidence angle over the whole range of ejection angles, the increase being most prominent in the direction of primary recoil emission. This effect is therefore ascribed to emission of surface atoms in direct projectile-surface atom collisions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00895923
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  • 8
    Electronic Resource
    Electronic Resource
    Sputtering yields for light ions as a function of angle of incidence (1979)
    Springer
    Applied physics 19 (1979), S. 421-426 
    Details
    ISSN: 1432-0630
    Keywords: 79 ; 20-m
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The sputtering yield of Ni, Mo, and Au have been measured at oblique angles of incidence for H+-, D+-, and4He+-ion irradiation in the energy region from 1 to 8 keV. The yields were determined from the weight loss of the targets. For Ni and Mo the dependence of the sputtering yield on the angle of incidence was found to be much stronger for H+- and D+-ion than for4He+-ion irradiation. In all cases the maximum in the yield was found at angles of incidence ϑ≧80°, where ϑ is the angle measured from the surface normal. Furthermore the ratio of the maximum yield to the yeild at normal incidence increases with increasing surface binding energy of the target material as well as with increasing ion energy in the energy region inveestigated. The results are discussed qualitatively in view of a model for the sputtering mechanism for light ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00930106
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  • 9
    Electronic Resource
    Electronic Resource
    The velocity distribution of sputtered Zr atoms for irradiation at normal and oblique angle of incidence (1984)
    Springer
    Applied physics 33 (1984), S. 235-241 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 32.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Laser-induced fluorescence by means of a cw dye laser has been used for investigating the velocity distribution of sputtered Zr atoms in the ground state. In order to evaluate the data the excitation probability of the atoms in the observation volume has been measured. The velocity distribution of Zr atoms for irradiation with Ar+-ions as well as light ions at normal and oblique angle (70°) of incidence is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614664
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  • 10
    Electronic Resource
    Electronic Resource
    Investigation of partial sputtering of lithium from a binary Al/Li alloy with laser induced fluorescence (1987)
    Springer
    Applied physics 43 (1987), S. 147-151 
    Details
    ISSN: 1432-0630
    Keywords: 79.20N ; 32.50 ; 66.30F
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Sputtering investigations of an Al/Li alloy containing 9.1 at-% of lithium have been performed for 6 keV helium ion bombardment. Absolute particle densities and velocity distributions of the sputtered neutral lithium atoms were measured with laserinduced fluorescence. The amount of sputtered lithium was found to be constant for target temperatures ranging from room temperature up to 500° C. The mean transport velocity and the sputtering yield of the Li component have been calculated from the measurements. Thermal evaporation of neutral Li atoms could be measured independently of the presence of the helium beam for target temperatures above 300° C. The experimental results indicate that the surface is covered by lithium with at least several atomic layers even under highcurrent ion irradiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617969
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