ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Al-doped 4H and 6H epitaxial layers have been implanted with 200 keV hydrogen orirradiated with 1 MeV electrons. Heat treatments have been carried out up to 1000 °C and electricalcharacterization, by means of deep level transient spectroscopy (DLTS), has been performed afterevery annealing treatment in the 100-750 K temperature range. We have detected several deeplevels and the possible involvement of hydrogen in the microscopic structure of these defects isdiscussed in the light of their thermal stability and previous results found in the literature. All thedetected defects, except for a level located at 0.55 eV above the valence band (Ev), do not displayany electric field dependence of their emission time constant
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.421.pdf
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