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1

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Boron-enhanced diffusion of boron from ultralow-energy ion implantation (1999)

Agarwal, Aditya ; Gossmann, H.-J. ; Eaglesham, D. J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 74 (1999), S. 2435-2437

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050 °C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1% and 10%, though it appears to be closer to 1% for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3×1014 and 1×1015 cm−2. It is proposed that the excess interstitials responsible for BED are produced during the formation of a silicon boride phase in the high B concentration layers. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.123872

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2

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Oxygen gettering and precipitation at MeV Si+ ion implantation induced damage in silicon (1996)

Agarwal, Aditya ; Christensen, K. ; Venables, D. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 69 (1996), S. 3899-3901

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The interaction of intrinsic oxygen in Czhochralski silicon with implantation damage induced by 2.0 MeV Si+ ions has been investigated as a function of annealing temperature and time. Four distinct regions of oxygen localization are revealed by secondary ion mass spectrometry following sample annealing. The different regions are correlated with either a near surface vacancy-rich region or the buried layer of extended defects near the projected range. The relative concentration of oxygen in each region depends on the competition between oxygen gettering in each region and out-diffusion to the surface. It has been established, using quasikinematical and dynamical contrast transmission electron microscopy imaging techniques, that the oxygen in regions containing extended dislocations is in the form of fine precipitates. The precipitates decorate both the dislocations and, for faulted loops, the stacking fault planes. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.117563

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3

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Efficient production of silicon-on-insulator films by co-implantation of He+ with H+ (1998)

Agarwal, Aditya ; Haynes, T. E. ; Venezia, V. C. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 72 (1998), S. 1086-1088

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have investigated the process of thin film separation by gas ion implantation and wafer bonding, as well as the more basic phenomenon of blistering, on which the technique is based. We show that when H and He gas implants are combined they produce a synergistic effect which enables thin-film separation at a much lower total implantation dose than that required for either H or He alone. By varying the H and He implantation doses we have been able to isolate the physical and chemical contributions of the gases to the blistering processes. We find that the essential role of H is to interact chemically with the implantation damage and create H-stabilized platelet-like defects, or microvoids. The efficiency of H in this action is linked to its effective lowering of the silicon internal surface energy. The second key component of the process is physical; it consists of diffusion of gas into the microvoids and gas expansion during annealing, which drives growth and the eventual intersection of the microvoids to form two continuous separable surfaces. He is more efficient than H for this process since He does not become chemically trapped at broken bonds and thus segregates into microvoids more readily. In particular, we have demonstrated that a 1×1016 cm−2 He dose in combination with a 7.5×1015 cm−2 H dose are sufficient to shear and transfer a thin silicon film onto a handle wafer after bonding the two wafers together. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.120945

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4

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Interstitial defects in silicon from 1–5 keV Si+ ion implantation (1997)

Agarwal, Aditya ; Haynes, Tony E.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 70 (1997), S. 3332-3334

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Extended defects from 5-, 2-, and 1-keV Si+ ion implantation are investigated by transmission electron microscopy using implantation doses of 1 and 3×1014 cm−2 and annealing temperatures from 750 to 900 °C. Despite the proximity of the surface, {311}-type defects are observed even for 1 keV. Samples with a peak concentration of excess interstitials exceeding ∼1% of the atomic density also contain some {311} defects which are corrugated across their width. These so-called zig-zag {311} defects are more stable than the ordinary {311} defects, having a dissolution rate at 750 °C which is ten times smaller. Due to their enhanced stability, the zig-zag {311} defects grow to lengths that are many times longer than their distance from the surface. It is proposed that zig-zag {311} defects form during the early stages of annealing by coalescence the high volume density of {311} defects confined within a very narrow implanted layer. These findings indicate that defect formation and dissolution will continue to control the interstitial supersaturation from ion implantation down to very low energies. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.119161

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5

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Transient enhanced diffusion from decaborane molecular ion implantation (1998)

Agarwal, Aditya ; Gossmann, H.-J. ; Jacobson, D. C. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 73 (1998), S. 2015-2017

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Transient enhanced diffusion (TED) from implantation of 5 keV B10H14 and 0.5 keV B ions has been quantified and compared for nominal boron doses of 1014 and 1015 cm−2. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 1015 cm−2 B dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess interstitials approximately equal to the number of implanted atoms which can become substitutional in the silicon lattice. Accordingly, no contribution to TED is expected from the hydrogen in the B10H14 ions and none is observed. Furthermore, there is no detectable effect in the diffusion profiles which can be attributed to a difference in the ion damage produced by the decaborane molecule and the boron atom. In both cases the reduction in diffusivity enhancement is due only to proximity of the implantation-induced excess interstitials to the wafer surface. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.122353

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6

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Gettering of iron in silicon-on-insulator wafers (1997)

Beaman, Kevin L. ; Agarwal, Aditya ; Kononchuk, Oleg ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 71 (1997), S. 1107-1109

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Gettering of Fe in silicon-on-insulator material has been investigated on both the bonded and separation by implantation of oxygen (SIMOX) platforms. Reduction of electrically active iron in intentionally contaminated and annealed wafers has been measured by deep level transient spectroscopy. These data, coupled with structural characterization techniques, such as transmission electron microscopy and preferential chemical etching, provide evidence that structural postimplantation damage below the buried oxide (BOX) in SIMOX wafers is an effective site for gettering of iron with the iron gettering efficiency varying with the SIMOX processing. Gettering was not observed in bonded wafers, and the lower BOX interface did not provide any iron gettering in either bonded or SIMOX wafers. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.119741

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7

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Reduction of transient diffusion from 1–5 keV Si+ ion implantation due to surface annihilation of interstitials (1997)

Agarwal, Aditya ; Gossmann, H.-J. ; Eaglesham, D. J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 71 (1997), S. 3141-3143

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1×1014 cm−2 Si+ was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050 °C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si+ ion range is observed at all temperatures, extrapolating to ∼1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of 〈10 nm. The data presented here demonstrate that in the range of annealing temperatures of interest for p-n junction formation, TED is reduced at smaller ion implantation energies and that this is due to increased interstitial annihilation at the surface. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.120552

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8

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Boron-enhanced diffusion of boron: Physical mechanisms (1999)

Agarwal, Aditya

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 74 (1999), S. 2331-2333

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Silicon layers containing B in excess of a few atomic percent create a supersaturation of Si self-interstitials in the underlying Si, resulting in enhanced diffusion of B in the substrate [boron-enhanced diffusion (BED)]. The temperature and time dependence of BED is investigated here. Evaporated boron as well as ultralow energy 0.5 keV B-implanted layers were annealed at temperatures from 1100 to 800 °C for times ranging from 3 to 3000 s. Isochronal 10 s anneals reveal that the BED effect increases with increasing temperature up to 1050 °C and then decreases. In contrast, simulations based on interstitial generation via the kick-out mechanism predict a decreasing dependence leading to the conclusion that the kick-out mechanism is not the dominant source of excess interstitials responsible for BED. The diffusivity enhancements from the combined effects of BED and transient-enhanced diffusion, measured in 2×1015 cm−2, 0.5 keV B-implanted samples, show a similar temperature dependence as seen for evaporated B, except that the maximum enhancement occurs at 1000 °C. The temperature-dependent behavior of BED supports the hypothesis that the source of excess interstitials is the formation of a silicon boride phase in the high-boron-concentration silicon layer. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.123841

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