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  • 11
    Electronic Resource
    Electronic Resource
    Strain-induced nonlinear energy-band splitting of Si1−xGex alloys coherently grown on (111) and (110) oriented Ge substrates (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1184-1186 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A multi-band semi-empirical tight-binding method was used to calculate the band structures of Si1−xGex alloys coherently grown on (111) and (110) oriented Si1−yGey substrates. The results show that the lowest conduction band X5 at point X in the [001] directions of the Si1−xGex alloy is split into two bands with even and odd parities, due to the reduction of symmetry by strain. This is the first calculation that shows a kind of nonlinear band-edge splitting in the coherently grown Si1−xGex alloys. The results here can be approximated by adding a new deformation potential Xi'u to the linear deformation potential formula, which was used earlier for bulk Si under external [111] and [110] uniaxial stress cases. For coherently grown layers with a large lattice mismatch, the nonlinear splittings should not be neglected when analyzing the electronic properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104359
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  • 12
    Electronic Resource
    Electronic Resource
    Observation of ion gettering effects in high-temperature superconducting oxide material (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1629-1630 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion gettering effect has been observed in high-temperature superconducting YBa2Cu3O7 material. Silicon ions were implanted into the material and subsequent high-temperature annealing produced ion movement from a low concentration region to a higher concentration region where the damage of the crystal structure is severe. This gettering effect could be used to make a superconductor-nonsuperconductor-superconductor trilayer structure within a single YBCO film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117053
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  • 13
    Electronic Resource
    Electronic Resource
    Novel method of patterning YBaCuO superconducting thin films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 896-898 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A unique method of patterning YBaCuO thin films based on the inhibition of superconductivity by Si-YBaCuO intermixing has been developed. In the experiment, a thin Si film was first evaporated on a MgO substrate and subsequently patterned using laser direct-write etching. Multilayered YBaCuO thin films were then deposited by e-beam evaporation and annealed in a rapid thermal annealing system for 30–90 s at 980 °C. The YBaCuO film deposited on the silicon regions became insulating. Auger depth profiling measurements indicate that Si-YBaCuO intermixing had occurred in these areas. Between the insulating regions, narrow YBaCuO superconducting lines were formed. For both 10-μm-wide, 1-mm-long and 2.5-μm-wide, 80-μm-long lines, the Tc was observed above 76 K. The critical current density of the lines was measured to be 300 A/cm2 at 75 K. This patterning technique may be useful for fabrication of high Tc superconducting interconnects and devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102448
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  • 14
    Electronic Resource
    Electronic Resource
    High Tc superconducting thin films by rapid thermal annealing of Cu/BaO/Y2O3 layered structures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2229-2231 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting thin films of YBaCuO have been formed using rapid thermal annealing of Cu/BaO/Y2 O3 layered structures, which were deposited on MgO substrates by electron beam evaporation. The best film has an onset temperature of 94 K and zero resistance at 84 K. The dependence of the film characteristics and superconducting transition temperature on the annealing conditions has been studied. Auger depth profiling was used to examine the interdiffusion between the film and the MgO substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100510
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  • 15
    Electronic Resource
    Electronic Resource
    Effect of Schottky barrier height on EL2 measurement by deep-level transient spectroscopy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2469-2472 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of EL2 midgap trap in GaAs using deep-level transient spectroscopy (DLTS) is reported for contacts having a large range of Schottky barrier height. The results show that the DLTS signal of EL2 increases as the barrier height rises from 0.62 eV and saturates for barrier height above 0.83 eV. It is found, for the first time, that for Schottky barrier height lower than 0.62 eV the EL2 signal disappears. A model for calculation of the quasi-Fermi level in the depletion region is used to explain the variation and disappearance of the EL2 signal. This model may also apply to other electron traps near midgap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341655
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  • 16
    Electronic Resource
    Electronic Resource
    A planar method for patterning of high-temperature superconducting films and multilayers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 240-242 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a novel technique for patterning high-temperature superconducting (HTS) film and multilayer device structures. In the process an impurity ion (e.g., Si) is implanted into HTS films through a photoresist mask. The impurity ions convert the irradiated portion of the film into an insulating form by chemical reaction between the ions and the oxygen in the film, without altering the overall crystalline structure of the film. Removal of the photoresist results in a flat surface, which allows the epitaxial growth and implantation patterning of subsequent films so that a complete multilayer device structure can be fabricated. We show in detail the patterning process, as well as the properties of patterned and regrown films. Some simple device structures, such as a vertical contact and a crossover, are demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112613
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  • 17
    Electronic Resource
    Electronic Resource
    Inhibition of superconductivity in Y-Ba-Cu-O films by Si ion implantation (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3633-3635 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method of converting an oxide Y-Ba-Cu-O (YBCO) film from superconducting into insulating film is presented. With implanted Si ions, the film loses its electrical conductivity and diamagnetism while its crystalline structure is preserved. The process allows the growth of an epitaxial YBCO film on top of the inhibited area, thus providing an effective method of patterning high temperature superconducting multilayer structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110072
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  • 18
    Electronic Resource
    Electronic Resource
    Inhibition of superconductivity in YBaCuO films by aluminum ion implantation (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2717-2719 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the inhibition of superconductivity in high-temperature superconductors oxide films by aluminum ion implantation. Aluminum ions, with doses ranging from 1×1015–1×1016/cm2, were implanted into epitaxial YBa2Cu3O7−x (YBCO) films with an injection energy of 100 keV. Doses of 1×1016/cm2 completely suppressed the diamagnetism of the YBCO film without the need for annealing. Lower doses of 1×1015/cm2 inhibited the superconductivity after low-temperature annealing. The results of the aluminum implantation are compared with previous silicon and boron implantations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114303
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  • 19
    Electronic Resource
    Electronic Resource
    Planar microwave devices fabricated by ion-implantation patterning of high-temperature superconductors (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2119-2121 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have applied ion-implantation inhibit patterning as a new method of fabricating low-loss microwave transmission lines in high-temperature superconductor thin films. To determine the effectiveness of this technique, we fabricated coplanar waveguide transmission lines in YBa2Cu3O7−δ thin films that had been deposited on LaAlO3 substrates using pulsed laser deposition. Microwave characterizations of these lines are compared to a reference line fabricated with conventional ion milling. At 76 K and 12 GHz, the attenuation constants of the ion-implanted transmission lines are approximated 0.02 dB/mm, and the overall loss response is indistinguishable from that of the ion-milled device. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116899
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  • 20
    Electronic Resource
    Electronic Resource
    Precipitate drifting and coarsening caused by electromigration (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5457-5462 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A mechanism is proposed to explain electromigration-enhanced precipitate coarsening in Al-Cu alloy interconnects. The interface between the α-phase matrix and a θ-phase Al2Cu precipitate is incoherent, along which both Al and Cu atoms diffuse under an applied electric field. Depending on the relative mobility of Al and Cu, the diffusion causes the precipitate to migrate toward either the positive or the negative electrode. The velocity of a spherical precipitate is proportional to the electric field and the mobilities and inversely proportional to its radius. A critical electric field or precipitate radius exists, above which the precipitate can penetrate a grain boundary. Consequently, the precipitates agglomerate by the synergism between the Ostwald ripening and the current-induced migration. The resulting particles are distantly separated, depleting Cu atoms from the rest of the interconnect. The mechanism appears to limit the lifetime of interconnects having bamboo-like grains, tested below 300 °C, less than half of the melting temperature of Al. Experiments taking advantage of migration of various inhomogeneities are suggested which may illuminate several basic issues in the field of electromigration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354225
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