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  • 1
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2227-2229 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi-Pb-Sr-Ca-Cu-Ag alloy coatings were made by vacuum induction melting followed by melt dipping on substrates of MgO, SrTiO3, and Al2O3. The metallic precursor layers were then subjected to a controlled atmosphere oxidation and annealing to produce oxide superconductors. Superconducting coatings with onset temperatures of 112 K and zero resistance temperatures of 80 K were obtained in this way. The addition of Ag aided in the alloy melting and dipping processes, and produced a superconducting oxide/noble metal composite after oxidation. The resulting superconducting phases were analyzed by x-ray powder diffraction. The influence of the substrate, dipping processes, oxidation, and annealing conditions on the superconducting properties are discussed.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1341-1349 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase formation kinetics in Nb/Al multilayered thin films having overall compositions of 25, 33, 50, and 75 at. % Al have been investigated using scanning calorimetry, x-ray diffraction, and cross-sectional transmission electron microscopy. The first phase to form upon annealing the Nb/Al layered structure of all samples is the NbAl3 intermetallic. Calorimetry clearly identifies the NbAl3 formation to be a two-stage process. The first stage is the formation of a planar layer by nucleation and growth to coalescence while the second stage is the thickening of the planar layer. The large amount of heat released (and hence large volume fraction of NbAl3 formed) during the first reaction stage is consistent with heterogeneous nucleation at well-isolated sites in the Nb/Al interface. This is surprising in light of the large thermodynamic driving force expected for nucleation and suggests that the local nonequilibrium nature of the Nb/Al interface greatly reduces the driving force for nucleation. The next phase observed in samples of 25 and 33 at. % Al is the A15 superconducting phase, Nb3Al. The Nb3Al growth completes a first reaction stage similar to the NbAl3, but the subsequent thickening reaction stage is not observed without simultaneous Nb2Al growth. The high interface velocities derived from the calorimetry for formation of both NbAl3 and the A15 Nb3Al indicate that atomic transport must be by grain boundary diffusion.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7313-7322 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the phase formation sequence for the reaction of Nb and Al in multilayer films using cross-sectional transmission electron microscopy and x-ray diffraction. NbAl3 is the first intermetallic phase to form. Contrary to previous reports, we find evidence from cross-sectional transmission electron microscopy that the sigma phase, Nb2Al, is not bypassed in the reaction sequence. Instead, its formation is concurrent with the formation of the superconducting A15 phase, Nb3Al. However, depending on the periodicity and the composition of the film, the Nb2Al phase can be consumed by the Nb3Al phase for long annealing times. The significance of this phase formation sequence to powder metallurgically processed magnet wire is discussed.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3136-3143 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: NbN thin films cosputtered with Ta show approximately an order of magnitude enhancement in critical current density over a wide range of applied magnetic fields, while the critical fields and transition temperatures are essentially unchanged by the Ta addition. Both thin-film x-ray diffraction and cross-sectional transmission electron microscopy analyses show a highly textured structure with a second phase (also highly textured) present in these films at the grain boundaries. The Ta acts to refine the grain size of the NbN, increasing the effective pinning strength and hence the critical current density. Comparison of the global pinning force to current models of flux pinning supports individual pin breaking as the limiting mechanism for critical current in NbN films.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1020-1027 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the nature of low-power nonlinear effects in high-temperature superconducting microwave devices by measuring third harmonic generation at 76 K in coplanar waveguide transmission lines of different geometries fabricated from YBa2Cu3O7−δ thin films. The measured power in the third-harmonic signal changes systematically with film thickness, center conductor linewidth, and line length. We analyze these results using a simple model for a transmission line with a nonlinear inductance arising from a current-dependent superconducting penetration depth. This analysis describes quantitatively the observed differences in harmonic generation for transmission lines of different dimensions, and yields a single geometry-independent parameter (the nonlinear scaling current density J0) to quantify the observed nonlinear behavior. For the thin film samples studied here J0=3.0×107 A/cm2 at 76 K for all geometries investigated. These results provide the means to establish a lower limit for the expected nonlinear response of superconducting components of arbitrary geometry at microwave frequencies. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3780-3784 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of an aluminum oxide layer at the interface of Al/Nb on phase formation in thin-film binary diffusion couples was studied. Al/Nb bilayers with or without aluminum oxide at the interface were prepared by electron-beam evaporation. The samples were annealed at a constant heating rate of 50 °C/min to temperatures in the range 800–950 °C, and the progress of the reaction was monitored by x-ray diffraction and measurement of the superconducting transition temperature. The presence of an aluminum oxide layer at the interface was found to significantly retard the formation of the superconducting A15 Nb3Al phase.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting thin films of Bi-Sr-Ca-Cu-oxides have been reproducibly prepared by reactive magnetically enhanced triode sputtering using three separate metal targets (Sr, Ca, and Cu-Bi). Oxygen was introduced directly at the substrates during film growth. The films were deposited on ambient temperature substrates [Al2O3, SrTiO3, and yttria-stabilized zirconia (YSZ)] and had thicknesses of 0.5–1.5 μm. After deposition, the films were annealed at 850–900 °C in flowing oxygen. The electrical resistance of the best films on YSZ decreased approximately linearly with temperature until the onset of superconductivity at about 85 K. Zero resistance was achieved by 74 K. Critical current densities in excess of 5×105 A/cm2 at 4.2 K were also obtained. X-ray diffraction demonstrated that the best films were nearly single phase (Bi2Sr2Ca1Cu2O8+x) and textured with the c axis perpendicular to the substrate. The effect of composition and annealing on our results is discussed.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 773-775 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An antenna-coupled high-Tc superconducting microbolometer on a silicon substrate, operating at infrared wavelengths, is described. This detector incorporates a silicon-micromachined yttria-stabilized zirconia air bridge at the feed of a planar lithographic antenna to simultaneously minimize the thermal conductance and the heat capacity of the bolometer. At an operating temperature of 87.4 K, the optical responsivity measured using a 300-K blackbody source over a 0.2–2.9 THz bandwidth is 2900 V/W, the optical noise-equivalent power (NEP) is 9×10−12 W/Hz1/2, and the time constant is 〈10 μs. This NEP is nearly a factor of 2 lower than the previous record for a liquid-nitrogen-cooled thermal detector, and the time constant is several orders of magnitude shorter.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1126-1128 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed an in situ process for fabricating high transition temperature superconductor-normal metal-superconductor microbridges using a step edge to define the normal metal length. Critical current-normal resistance products over 1 mV have been measured at low temperature in devices with high-resistivity Ag-Au alloy bridges. Results on samples with Ag bridges are compared with the alloy data as an initial test of recent theories of SNS Josephson junctions. Josephson effects have been demonstrated in these devices at temperatures higher than 80 K. Clearly defined rf steps have been observed, with power dependence qualitatively similar to theoretical predictions.
    Type of Medium: Electronic Resource
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