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  • 11
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 670-672 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is found that an ordered and air-stable GaAs(111)A–(1×1)–Cl surface can be produced by chemical etching/passivation with dilute HCl solution. The synchrotron polarization-dependent Cl K-edge x-ray absorption near-edge structure and x-ray photoelectron spectroscopy studies showed that the surface is terminated with Ga–Cl bonds oriented along the surface normal. Low-energy electron diffraction studies showed a bulklike (1×1) structure on the Cl-terminated GaAs(111)A surface. The Cl termination eliminates surface band-gap states caused by surface oxides. Photoluminescence measurements showed a dramatic increase in the near-band radiative emission rate corresponding to reduction in the occupied surface band-gap states. A reduction of surface gap states by Cl termination was confirmed by surface photovoltage measurements. © 1995 American Institute of Physics.
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  • 12
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 552-554 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ x-ray photoelectron spectroscopy has been used to analyze the nature and extent of damage to the Si(100) surfaces bombarded with xenon ions in the energy range 0.25–2 keV. Dramatic changes in the Si 2p core levels were found upon ion bombardment. A curve-fitting analysis of the core level shows that an amorphous silicon overlayer is formed on the Xe+ ion bombarded surface. The results indicate that these low-energy Xe+ ions amorphize the surface in a layer-by-layer manner and that the depth of damage increases rapidly for ion doses between 1013 and 1015 ions cm−2. At about 1015 ions cm−2 the damage depth reaches a saturation for all ion energies studied. The saturated damage depth is found to increase linearly with ion energy.
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  • 13
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2941-2943 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both synchrotron radiation photoemission spectroscopy (PES) and Al Kα photoelectron spectroscopy (XPS) are used to determine the suboxide distribution at SiO2/Si (100) interfaces. High resolution PES measurements clearly resolved various suboxides with chemical shifts of 0.97, 1.80, and 2.60 eV for Si+1, Si+2, and Si+3, respectively. A total of 9.3×1014 atoms cm−2 of suboxide is found by PES measurements while only 4.2×1014 atoms cm−2 is measured by XPS on the same sample. This discrepancy is neither caused, as previously believed, by a difference in SiO2/Si (100) quality nor by a difference in methodology in data analysis. The possible factors, e.g., electron mean-free path and photoionization cross section, which contribute to the difference between PES and XPS data, are considered.
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  • 14
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2675-2677 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Techniques to determine the thickness of thin (30–200 A(ring)) anodic oxide films on p-GaAs (100) are reported. The layers were grown potentiostatically in 0.3 M NH4H2PO4 (pH 4.4) solution. By lithographic techniques, several series of squares were etched into the oxide and the step height was measured using both atomic force microscopy (AFM) and a stylus surface profiler (Dektak). Secondary ion mass spectrometry (SIMS) profiles of samples prior to and after the photolithographic treatment show that neither the thickness nor composition of the layers are affected by the treatment. The thickness values obtained in the investigated range show standard deviations better than ±9 A(ring) (AFM) and ±22 A(ring) (Dektak) and correlate well in a linear relation to SIMS sputter times to the interface. © 1996 American Institute of Physics.
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  • 15
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] THERE is a growing tendency to use the adsorption of xenon for surface area measurements, especially for small areas, because the low value of P0(Xe) enables useful values of P/P0 to be reached with conventional apparatus without incurring the penalty of large dead volume corrections. However, ...
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  • 16
    Electronic Resource
    Electronic Resource
    Springer
    Oxidation of metals 45 (1996), S. 349-374 
    ISSN: 1573-4889
    Keywords: Cr2O3 films on Cr and high-Cr-content alloys ; reactive elements ; 18O/SIMS ; transport processes
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The influence of various reactive-element (RE) oxide coatings (Y2O3, CeO2, La2O3, CaO, HfO2, and Sc2O3) on the oxidation behavior of pure Cr, Fe−26Cr, Fe−16Cr and Ni−25Cr at 900°C in O2 at 5×10−3 torr has been investigated using the18O/SIMS technique. Polished samples were reactively sputtercoated with 4 nm of the RE oxide and oxidized sequentially first in16O2 and then in18O2. The effectiveness of each RE on the extent of oxidation-rate reduction varied with the element used. Y2O3 and CeO2 coatings were found to be the most beneficial, whereas Sc2O3 proved to be ineffective, for example, for the oxidation of Cr. SIMS sputter profiles showed that the maximum in the RE profile moved away from the substrate-oxide interface during the early stages of oxidation. After a certain time the RE maximum remained fixed in position with respect to this interface, its final relative position being dependent on the particular RE. The position of the RE maximum within the oxide layer also varied with the substrate composition. For all coatings18O was found to have diffused through the oxide to the substrate-oxide interface during oxidation, the amount of oxide at this interface increasing with increasing time. The SIMS data confirm that for coated substrates there has been a change in oxidegrowth mechanism to predominantly anion diffusion. The RE most probably concentrates at the oxide grain boundaries, generally as the binary oxide (RE) CrO3. Cr3+ diffusion is impeded, while oxygen diffusion remains unaffected.
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  • 17
    ISSN: 1573-4889
    Keywords: HIGH-RESOLUTION SIMS ; TEM ; ALUMINA SCALES ; FeCrAl ; Y SEGREGATION
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The oxidation behavior of undoped and Y-dopedhigh-purity FeCrAl at 1200°C was investigated. Thescale-growth processes were studied using two-stage16O/18O experiments andhigh-resolution imaging SIMS. SEM, TEM, and scanning transmission electronmicroscopy-electron-dispersive X-ray spectrometry(STEM-EDS) studies were performed in order to determinethe microstructure of the oxide and the chemistry of the metal-oxide interface. An equiaxedα-Al2O3 scale was found togrow by simultaneous outward Al and inward oxygendiffusion on the undoped FeCrAl. In contrast, a columnarα-Al2O3 grain structure on the Y-doped FeCrAl was produced by inwardoxygen diffusion; outward Al diffusion was suppressed.Y was shown to segregate toα-Al2O3 grain boundaries andto the metal-oxide interface.
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  • 18
    ISSN: 1573-4889
    Keywords: Oxidation ; iron-aluminum alloys ; Mössbauer and Auger spectroscopy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Oxidation of a Fe-7.4 at.% Al alloy at 1173 K in oxygen at 1 atm pressure resulted in the formation of a rust-colored film, shown by Auger spectroscopy to be a duplex layer consisting of an outer Fe-rich oxide over an Al-rich oxide. Mössbauer spectroscopy revealed that the outer layer was hematite containing ∼10 at.% Al3+ and that the inner alumina layer contained some Fe3+.
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  • 19
    Electronic Resource
    Electronic Resource
    Springer
    Oxidation of metals 13 (1979), S. 255-272 
    ISSN: 1573-4889
    Keywords: oxidation ; Fe-C ; graphite deposition ; nonadherent oxide ; kinetics
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The oxidation of Fe-C alloys containing 0.5 and 1.0% C was studied in 1 atm O2 at 700° C. The oxidation rate is considerably slower than for pure Fe. The oxide scale formed is detached, multilayered, and overoxidized, containing little or no FeO. A thin film of graphite was identified at the metal-oxide interface by electron diffraction. It is proposed that the slow oxidation and abnormal scale are caused by a residue of graphite left at the metal surface from the oxidation of Fe3C. This inhibition of the oxidation of Fe by carbon at 700°C is in contrast to the stimulation observed at 500°C.
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  • 20
    ISSN: 1573-4889
    Keywords: oxidation ; segregation ; impurities ; CeO2-coated Fe-20Cr
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The interfacial segregation of sulphur and carbon during the oxidation in 1 torr O2 at 1173 K of Fe-20Cr alloy, which was either free of Ce, alloyed with 0.078 wt.% Ce, or sputter-coated with a 4 nm-thick CeO2 layer, was studied using polyatomic SIMS. Oxidation periods were up to 19 hr. During oxidation, sulphur and carbon accumulated at the alloy-oxide interface region of both uncoated and coated alloys. The amount of segregated sulphur did not vary appreciably with time, whereas carbon increased with time. The total amount of segregants was similar for both uncoated and coated alloys, although the scales formed on the sputter-coated alloy maintained adhesion and were about 10 times thinner than those on the uncoated alloys.
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