ALBERT — All Library Books, journals and Electronic Records Telegrafenberg

11

Electronic Resource

The effect of impurity content on point defect evolution in ion implanted and electron irradiated Si (1997)

Libertino, S. ; Benton, J. L. ; Jacobson, D. C. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 70 (1997), S. 3002-3004

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We compare the defect complexes generated in crystalline Si by electron irradiation and ion implantation, using irradiation fluences which deposit the same total energy in nuclear collisions. Deep level transient spectroscopy was used to monitor both vacancy-type (e.g., divacancies) and interstitial-type (e.g., carbon–oxygen complexes) defects produced on p-type Si samples. We show that identical defect structures and annealing behavior, T≤300 °C, are produced by both Si implantation and electron irradiation. After annealing at higher temperatures, we observe a higher residual damage in ion implanted samples, which is a direct consequence of the extra incorporated ions. We demonstrate that the substrate impurity content rather than the ion cascade dominates defect formation and evolution. In high purity Si, B-related instead of C-related (e.g., the carbon–oxygen complex) defects preferentially store the interstitials which escape direct recombination with vacancies, and the thermal stability of the CiOi complexes is decreased in Si containing low concentration of impurities. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.118770

Permalink

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

12

Electronic Resource

Gettering of Co in Si by high-energy B ion-implantation and by p/p+ epitaxial Si (2000)

Benton, J. L. ; Boone, T. ; Jacobson, D. C. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 77 (2000), S. 4010-4012

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Detection and gettering of Co contamination in processed Si is an important issue in integrated circuit fabrication. In this work, Co was intentionally introduced into Si by ion implantation, and its diffusion monitored by secondary ion mass spectroscopy. The surface layer recombination lifetime in p/p+ epitaxial Si is unaffected by the Co at doses of 1×1011 cm−2 or 1×1012 cm−2. In the case of 2.5 MeV, 4×1014 B/cm2 ion implanted bulk Si, two mechanisms for Co redistribution during high temperature furnace, 900 °C, 30 min, processing are evident. First, regions of high boron concentration provide gettering sites for Co contamination. Second, the final distribution of Co in Si reflects ion-implantation induced defect evolution during annealing. Both mechanisms will operate during device processing and will control the effect of the metal on the electrical properties of the Si. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1332828

Permalink

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

13

Electronic Resource

Electrical signatures and thermal stability of interstitial clusters in ion implanted Si (1998)

Benton, J. L. ; Halliburton, K. ; Libertino, S. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 84 (1998), S. 4749-4756

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Deep level transient spectroscopy (DLTS) investigations have been used to characterize the electrical properties of interstitial clusters in ion-implanted Si. Both n- and p-type samples were implanted with 145 keV–1.2 MeV Si ions to doses of 1×1010–5×1013 cm−2 and annealed at 450–750 °C. On samples annealed at temperatures above 550 °C, the residual damage is dominated by two hole traps (B lines) in p-type and five electron traps (K lines) in n-type samples. Analyses of the spectra and defect depth profiles reveal that these signatures are related to Si self-interstitial clusters, and experiments confirm that these clusters do not embody large numbers of impurities such as C, O, B, or P. Four deep level signatures exhibit similar annealing behavior, suggesting that they arise from the same defect structure. On the other hand, the remaining signatures exhibit different annealing behaviors and are tentatively associated with different cluster configurations. We have found that the thermal stability of the clusters is enhanced by either increasing the Si dose or by reducing the impurity content of the substrate. The explanation of these effects proposes that bigger and more stable clusters are formed when the concentration of free interstitials available for clustering is increased and the competing interstitial trapping at impurities is inhibited. Finally, in samples implanted at doses of ≥1×1013 cm−2, most of the DLTS signals exhibit a complex and nonmonotonic annealing behavior providing evidence that the clusters can transform between electronic configurations. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.368800

Permalink

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

14

Electronic Resource

Evolution from point to extended defects in ion implanted silicon (1997)

Benton, J. L. ; Libertino, S. ; Kringhøj, P. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 82 (1997), S. 120-125

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We present a quantitative study of the evolution of point defects into clusters and extended defects in ion-implanted Si. Deep level transient spectroscopy (DLTS) measurements are used to identify and count the electrically active defects in the damaged region produced by Si ion implantation at energies of 145 keV–2 MeV, and fluences from 1×108 to 5×1013 Si/cm2. Analyses of silicon annealed in the temperature range 100–680 °C allow us to monitor the transition from simple point defects to defect clusters and extended defects that occur upon increasing the ion fluence and the annealing temperature. At low doses, 〈1010 Si/cm2, only about 2% of the Frenkel pairs generated by the ion beam escape recombination and are stored into an equal number of interstitial and vacancy-type point defects. Thermal treatments produce a concomitant annealing of interstitial and vacancy-type defects until, at temperatures above 350 °C, only two to three interstitial-type defects per ion are left, and the DLTS spectra contain signatures of second-order point defects. Interstitial clusters at Ev+0.29 and Ev+0.48 eV are found to dominate the residual damage of silicon implanted at higher fluences, 1×1012–7×1013 Si/cm2, and at annealing temperatures, T≥600 °C. These interstitial clusters have point defect capture kinetics and are not observable in transmission electron microscopy (TEM), suggesting that they are smaller than (approximate)50 Å. Finally, for silicon implanted at higher Si doses, ≥5×1013 Si/cm2, thermal treatments at 680 °C result in a strong decrease in the concentration of the interstitial cluster signatures and in the introduction of a different DLTS signal, Ev+0.50 eV, which exhibits logarithmic rather than exponential carrier capture kinetics, a feature typical of an extended defect. Comparison of the formation and dissolution of this extended defect signature with TEM analyses indicates that this level is a signature of the rodlike {311} defects that are known to store the interstitials responsible for transient enhanced diffusion. These results suggest that the small interstitial clusters are either the precursors of the {311} defects or that they compete with {311} defects as sinks for self-interstitials. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.365583

Permalink

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

15

Electronic Resource

Position of Radical Attack during Oxidation of Long-Chain Paraffins (1953)

BENTON, J. L. ; WIRTH, M. M.

[s.l.] : Nature Publishing Group

Nature 171 (1953), S. 269-269

add to mindlist on the mindlist

Details

ISSN: 1476-4687

Source: Nature Archives 1869 - 2009

Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics

Notes: [Auszug] In our research on the mechanism of liquid-phase oxidation of paraffins, we have determined the proportion of attack on the different carbon atoms of n-decane. Pure n-decane was autoxidized at 145 C. with oxygen until the hy d roper oxide concentration had reached 2-5 per cent w/w. From previous ...

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1038/171269a0

Permalink

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

16

Electronic Resource

Amines and peptides in the brain of the American lobster: immunocytochemical localization patterns and implications for brain function (1997)

Langworthy, K. ; Helluy, S. ; Benton, J. ; [et al.]

Springer

Cell & tissue research 288 (1997), S. 191-206

add to mindlist on the mindlist

Details

ISSN: 1432-0878

Keywords: Key words: Amines ; Peptides ; Serotonin ; Supraesophageal ganglion ; Olfactory lobe ; Lobster ; Homarus americanus (Crustacea)

Source: Springer Online Journal Archives 1860-2000

Topics: Biology , Medicine

Notes: Abstract. The distributions of serotonin- (5HT-), substance P- (SP-), small cardioactive peptideb- (SCPb-), and histamine- (HA-) like immunoreactivities were examined in the adult lobster supraesophageal ganglion. Vibratome sections were labeled using avidin-biotin-peroxidase immunocytochemical methods. The localization patterns for each substance were assessed in 21 regions within the median protocerebrum, deutocerebrum, and tritocerebrum. Each immunoreactivity has a unique distribution within the brain; however, most regions are immunoreactive for more than one neurotransmitter. Of particular interest are SP-immunoreactive protocerebral neurons that contact olfactory projection neurons and appear homologous to those found in other crustaceans. Regional differences in immunolabeling within the deutocerebral olfactory and accessory lobes suggest that specific areas within individual olfactory lobe glomeruli serve distinct functions in olfactory processing, and that subpopulations of accessory lobe glomeruli are innervated by different groups of neurons. This detailed comparison of the labeling patterns also has allowed us to define the anatomical connectivity between several cell body clusters, fiber tracts, and neuropil areas in the lobster brain.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/s004410050806

Permalink

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

17

Electronic Resource

The plant growth regulator activity of the fungicide, epoxiconazole, on Galium aparine L. (cleavers) (1995)

Benton, J. M. ; Cobb, A. H.

Springer

Plant growth regulation 17 (1995), S. 149-155

add to mindlist on the mindlist

Details

ISSN: 1573-5087

Keywords: anatomy ; epoxiconazole ; Galium aparine L. ; gibberellins ; leaf growth

Source: Springer Online Journal Archives 1860-2000

Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition

Notes: Abstract The plant growth regulator activity of epoxiconazole, a new triazole fungicide, was investigated by time-course, dose-response and histology experiments with Galium aparine L. (cleavers). Seven days after treatment with 125g ai ha−1 epoxiconazole (field rate), plant height was reduced by 43%. After seventeen days, leaflet area was reduced by 27% but leaflet fresh weight was not significantly influenced. This was partly because leaflet thickness had increased by 20% following epoxiconazole application. Chlorophyll concentrations were also increased on a unit area basis. Examination of leaflet anatomy showed that epoxiconazole elongated palisade, spongy mesophyll and upper epidermal cells. For example, 125g ai ha−1 caused a 35% increase in the length of spongy mesophyll cells. Epoxiconazole also prevented cell separation as there were significantly more palisade and spongy mesophyll cells per unit area than in leaflets sprayed with water. Stem development was reduced and 125g ai ha−1 inhibited the elongation of pith cells in stem tissue by 53%. However, the simultaneous application of gibberellin A3 (GA3) with epoxiconazole resulted in stem elongation similar to that of control plants. These observations are consistent with the expected effects following the inhibition of cytochrome P-450 dependent enzyme activity.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00024175

Permalink

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

18

Electronic Resource

Results from the UN/ECE ICP-Crops indicate the extent of exceedance of the critical levels of ozone in Europe (1995)

Benton, J. ; Fuhrer, J. ; Gimeno, B. S. ; [et al.]

Springer

Water, air & soil pollution 85 (1995), S. 1473-1478

add to mindlist on the mindlist

Details

ISSN: 1573-2932

Keywords: ozone ; crops ; critical levels ; visible injury ; yield ; artificial neural networks ; Trifolium subterraneum ; Phaseolus vulgaris

Source: Springer Online Journal Archives 1860-2000

Topics: Energy, Environment Protection, Nuclear Power Engineering

Notes: Abstract The experiments of the United Nations/Economic Commission for Europe (UN/ECE) International Cooperative Programme on effects of air pollution and other stresses on crops and non-wood plants (ICP-Crops) are designed to investigate the effects of ambient ozone pollution on crops and non-wood plants. Each year, participants from approximately 17 European countries conduct a series of coordinated experiments to determine which species develop visible injury following ozone episodes and whether the biomass or yield of sensitive species is reduced. In 1993, ozone injury was only seen at two thirds of sites but in 1994 injury was detected at almost all sites. This coincides with generally higher ozone concentrations measured in that year. Injury was seen on crops including subterranean clover (Trifolium subterraneum L.), white clover (Trifolium repens L.), bean (Phaseolus vulgaris L.), tomato (Lycopersicon esculentum), soybean (Glycine max), watermelon (Citrullus lanatus) and tobacco (Nicotiana tabacum L.) at experimental sites and in some cases, in commercial fields. The application of ethylenediurea (EDU) to some crop species reduced the level of visible injury. At some sites, the yield of EDU-treated bean plants was greater than that of untreated plants where the critical level of ozone for yield reduction was exceeded. Preliminary analysis of ozone concentrations in the days preceding injury indicated a sequential ozone concentration effect. The results are discussed in relation to Level I and Level II mapping of exceedance of the short- and long-term critical levels for ozone.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00477189

Permalink