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  • 1
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    X-ray topography as a process control tool in semiconductor and microcircuit manufacture (1977)
    In:  CASI
    Details
    Publication Date: 2016-06-07
    Description: A bent wafer camera, designed to identify crystal lattice defects in semiconductor materials, was investigated. The camera makes use of conventional X-ray topographs and an innovative slightly bent wafer which allows rays from the point source to strike all portions of the wafer simultaneously. In addition to being utilized in solving production process control problems, this camera design substantially reduces the cost per topograph.
    Keywords: ENGINEERING (GENERAL)
    Type: NASA. Marshall Space Flight Center Proc. of the ASPE(MSFC Symp. on Eng. and Productivity Gains from Space Technol.; p 217-225
    Format: application/pdf
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  • 2
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    X-ray topography study of complex silicon microcircuits (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: The correlation between the yield of silicon microcircuits wafers versus defects observed in X-ray topographs produced by a high speed curved wafer X-ray topographic camera was investigated. Most of the topographs were made after final wafer probe. Results indicated that most high volume silicon wafer processing does not need X-ray topography as a routine process control. It is further indicated that in changing any existing process or developing a new process the technique can be of significant benefit.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-CR-161815
    Format: application/pdf
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  • 3
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    Bent crystal X-ray topography (1978)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: A television X-ray topographic camera system was constructed. The system differs from the previous system in that it incorporates the X-ray TV imaging system and has a semi-automatic wafer loading system. Also the X-ray diffraction is in a vertical plane. This feature makes wafer loading easier and makes the system compatible with any commercial X-ray generating system. Topographs and results obtained from a study of the diffraction contrast variation with impurity concentration for both boron implanted and boron diffused silicon are included.
    Keywords: URBAN TECHNOLOGY AND TRANSPORTATION
    Type: NASA-CR-150884
    Format: application/pdf
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  • 4
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    Cameras for semiconductor process control (1977)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: The application of X-ray topography to semiconductor process control is described, considering the novel features of the high speed camera and the difficulties associated with this technique. The most significant results on the effects of material defects on device performance are presented, including results obtained using wafers processed entirely within this institute. Defects were identified using the X-ray camera and correlations made with probe data. Also included are temperature dependent effects of material defects. Recent applications and improvements of X-ray topographs of silicon-on-sapphire and gallium arsenide are presented with a description of a real time TV system prototype and of the most recent vacuum chuck design. Discussion is included of our promotion of the use of the camera by various semiconductor manufacturers.
    Keywords: INSTRUMENTATION AND PHOTOGRAPHY
    Type: NASA-CR-150459
    Format: application/pdf
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  • 5
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    Apparatus for use in examining the lattice of a semiconductor wafer by X-ray diffraction (1978)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: An improved apparatus for examining the crystal lattice of a semiconductor wafer utilizing X-ray diffraction techniques was presented. The apparatus is employed in a method which includes the step of recording the image of a wafer supported in a bent configuration conforming to a compound curve, produced through the use of a vacuum chuck provided for an X-ray camera. The entire surface thereof is illuminated simultaneously by a beam of incident X-rays which are projected from a distant point-source and satisfy conditions of the Bragg Law for all points on the surface of the water.
    Keywords: SOLID-STATE PHYSICS
    Format: application/pdf
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  • 6
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    Gravitational effects of process-induced dislocations in silicon (1974)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: Matters pertaining to semiconductor device fabrication were studied in terms of the influence of gravity on the production of dislocations in silicon wafers during thermal cycling in a controlled ambient where no impurities are present and oxidation is minimal. Both n-type and p-type silicon wafers having a diameter of 1.25 in to 1.5 in, with fixed orientation and resistivity values, were used. The surface dislocation densities were measured quantitatively by the Sirtl etch technique. The results show two significant features of the plastic flow phenomenon as it is related to gravitational stress: (1) the density of dislocations generated during a given thermal cycle is directly related to the duration of the cycle; and (2) the duration of the thermal cycle required to produce a given dislocation density is inversely related to the equilibrium temperature. Analysis of the results indicates that gravitational stress is instrumental in process-induced defect generation.
    Keywords: PHYSICS, SOLID-STATE
    Type: NASA-CR-120477
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  • 7
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    The effect of a prior Sirtl etch on subsequent thermally induced processing damage in silicon wafers (1976)
    In:  Other Sources
    Details
    Publication Date: 2019-06-27
    Keywords: NONMETALLIC MATERIALS
    Type: Electrochemical Society; vol. 123
    Format: text
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  • 8
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    Faster X-ray analysis of semiconductor wafers (1976)
    In:  Other Sources
    Details
    Publication Date: 2019-06-28
    Description: X-ray camera, through use of vacuum chuck, significantly reduces cost per topograph by bending semiconductor wafer by at least one order of magnitude.
    Keywords: MECHANICS
    Type: MFS-23315 , NASA Tech Briefs (ISSN 0145-319X); 1; 2; P. 238
    Format: text
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  • 9
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    Effect of interfacial oxide layers on the current-voltage characteristics of Al-Si contacts (1976)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: Aluminum-silicon contacts with very thin interfacial oxide layers and various surface impurity concentrations are studied for both n and p-type silicon. To determine the surface impurity concentrations on p(+)-p and n(+)-n structures, a modified C-V technique was utilized. Effects of interfacial oxide layers and surface impurity concentrations on current-voltage characteristics are discussed based on the energy band diagrams from the conductance-voltage plots. The interfacial oxide and aluminum layer causes image contrasts on X-ray topographs.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-CR-150044
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  • 10
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    Gravitational effects on process-induced defects in single crystal silicon (1974)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: Description and discussion of a series of experiments which vary each of several important processing parameters including wafer orientation, temperature, gravity greater than 1 g, and ultimately zero gravity. These experiments are in progress and results to date are included from experiments which control temperature, duration of thermal cycle, and wafer orientation during 1 g processing. Preliminary evidence is presented which indicates that gravitational stresses play a role in defect generation during processing at 1 g.
    Keywords: PHYSICS, SOLID-STATE
    Type: AIAA PAPER 74-647 , Thermophysics and Heat Transfer Conference; Jul 15, 1974 - Jul 17, 1974; Boston, MA
    Format: text
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