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Apparatus for use in examining the lattice of a semiconductor wafer by X-ray diffractionAn improved apparatus for examining the crystal lattice of a semiconductor wafer utilizing X-ray diffraction techniques was presented. The apparatus is employed in a method which includes the step of recording the image of a wafer supported in a bent configuration conforming to a compound curve, produced through the use of a vacuum chuck provided for an X-ray camera. The entire surface thereof is illuminated simultaneously by a beam of incident X-rays which are projected from a distant point-source and satisfy conditions of the Bragg Law for all points on the surface of the water.
Document ID
19780017007
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Parker, D. L.
(Texas A and M Univ.)
Porter, W. A.
(Texas A and M Univ.)
Date Acquired
September 3, 2013
Publication Date
March 7, 1978
Subject Category
Solid-State Physics
Accession Number
78N24950
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-4,078,175|NASA-CASE-MFS-23315-1
Patent Application
US-PATENT-APPL-SN-724874
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