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  • 1
    Electronic Resource
    Electronic Resource
    Improved performance of electroluminescent devices based on an europium complex (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 67-69 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroluminescent (EL) devices using an europium complex Eu(DBM)3 bath as the electron-transport emitting layer were fabricated. The quenching effect of the metal cathode and the unstable nature of the Eu complex under EL operation markedly influence the EL efficiency. By keeping the emitting area far from the metal cathode and partly doping the Eu(DBM)3 bath layer with a hole-transport material, the EL performance was significantly improved. Sharp-band red emissions with turn-on voltage of 3 V, brightness of 820 cd/m2, and external quantum efficiency of 1% were achieved. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125658
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  • 2
    Electronic Resource
    Electronic Resource
    Laser spectroscopy of crossed molecular beams: The dissociation energy of BaI from energy-balance measurements (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 8544-8556 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Through application of energy-balance arguments to the crossed-beam reaction Ba(1S0)+HI(X 1Σ+) →BaI(X 2Σ+) +H(2S1/2), a lower limit for the BaI bond dissociation energy is determined to be D00(BaI) (approximately-greater-than)76.8±1.7 kcal/mol (3.33±0.07 eV). Based on the upper bound of D00(BaI) (approximately-less-than)78.5±0.5 kcal/mol, as determined from earlier predissociation studies [M. A. Johnson, J. Allison, and R. N. Zare, J. Chem. Phys. 85, 5723 (1986)], we recommend a BaI bond strength of 77.7±2.0 kcal/mol (3.37±0.09 eV). This dissociation energy is more than 5 kcal/mol higher than the previously accepted value of D00(BaI) as derived from mass spectrometric measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459292
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  • 3
    Electronic Resource
    Electronic Resource
    Room-temperature optical transitions in Mg-doped cubic GaN/GaAs(100) grown by metalorganic chemical vapor deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2064-2066 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of room-temperature optical transitions in a Mg-doped cubic GaN epilayer grown on GaAs(100) by metalorganic chemical vapor deposition has been investigated. By examining the dependence of photoluminescence on the excitation intensity (which varied over four orders) at room temperature, four different emissions with different origins were identified. A blue emission at ∼3.037 eV was associated with a shallow Mg acceptor, while three different lower-energy emissions at ∼2.895, ∼2.716, and ∼2.639 eV were associated with a deep Mg complex. In addition to a shallow acceptor at E≅0.213 eV, three Mg-related deep defect levels were also found at around 215, 374, and 570 meV (from the conduction band). © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372139
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  • 4
    Electronic Resource
    Electronic Resource
    Step-induced magnetic-hysteresis anisotropy in ferromagnetic thin films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3150-3153 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the quasistatic magnetic hysteresis of ferromagnetic thin films grown on a vicinal substrate, using Monte Carlo simulations within a two-dimensional XY model. Intrinsic in-plane anisotropy is assigned to surface sites according to their local symmetry. The simulated hysteresis loops show a strong anisotropy: the coercive field is the largest when the external field is along the step direction and vanishes when the external field is perpendicular to the step direction. In general, the coercivity increases with increasing step density, but displays a more complex dependence on film thickness. The simulations also suggest that the mechanism for the magnetization reversal is coherent rotation. These results are in good agreement with experiments. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1433179
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  • 5
    Electronic Resource
    Electronic Resource
    Ultrasonic attenuation in Zr41Ti14Cu12.5Ni10−xBe22.5Cx (x=0,1) bulk metallic glasses under high pressure (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3266-3268 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pressure dependence of ultrasonic attenuation in Zr41Ti14Cu12.5Ni10−xBe22.5Cx (x=0,1) bulk metallic glasses has been studied up to 0.5 GPa by using a pulse echo overlap method. The effect of carbon addition on the attenuation is also investigated. Some unique characteristics of the ultrasonic attenuation are found and compared with those of other glasses. The origin of the anomalous attenuation behavior is discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289237
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  • 6
    Electronic Resource
    Electronic Resource
    Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3762-3764 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strains in cubic GaN films grown on GaAs (001) were measured by a triple-axis x-ray diffraction method. Residual strains in the as-grown epitaxial films were in compression, contrary to the predicted tensile strains caused by large lattice mismatch between epilayers and GaAs substrates (20%). It was also found that the relief of strains in the GaN films has a complicated dependence on the growth conditions. We interpreted this as the interaction between the lattice mismatch and thermal mismatch stresses. The fully relaxed lattice constants of cubic GaN are determined to be 4.5038±0.0009 Å, which is in excellent agreement with the theoretical prediction of 4.503 Å. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288779
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  • 7
    Electronic Resource
    Electronic Resource
    Observation of electronic correlation effect in C60 adsorbed on an (0001) surface of 2H–MoS2 by scanning tunneling microscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3292-3294 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning tunneling microscopy (STM) studies of monolayer coverage of C60 molecules on a 2H–MoS2 (0001) surface reveal electronic features on the molecules that are rather different from those observed on metal and other semiconductor surfaces. The STM current contrast of the adsorbed C60 is dominated by that of the underlying crystalline lattice at low bias voltages. The observations can be understood by considering (1) a weak adsorption of C60 and (2) an electronic correlation effect between the substrate surface and the molecule. All essential aspects of the experimental STM results are quantitatively reproduced by our calculation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113734
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  • 8
    Electronic Resource
    Electronic Resource
    Elastic constants and their pressure dependence of Zr41Ti14Cu12.5Ni9Be22.5C1 bulk metallic glass (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1803-1805 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The acoustic velocities and their pressure dependence of bulk Zr41Ti14Cu12.5Ni9Be22.5C1 metallic glass (MG) have been measured up to 0.5 GPa by using a pulse echo overlap method. The elastic constants and thermodynamic parameters as well as their pressure dependence of the MG have been determined. The obtained elastic constants were compared to that of other kinds of glasses. More information about the microstructure, elastic properties, and glass forming ability of the MG was obtained. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123091
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  • 9
    Electronic Resource
    Electronic Resource
    Nanocrystallization of ZrTiCuNiBeC bulk metallic glass under high pressure (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2770-2772 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystallization of Zr41Ti14Cu12.5Ni9Be22.5C1 bulk metallic glass (BMG) under high pressure is investigated. It is found that the nanocrystallization is pressure assisted, and the primary nanocrystallization temperature decreases as the applied pressure increases. Pressure annealing of the BMG in the supercooled liquid region produces a composite with dispersion of very fine nanocrystallites in the amorphous matrix. A fully nanocrystallization is obtained by pressure annealing under 6 GPa at 723 K. The pressure also controls the phase selection during the crystallization. The mechanism for the pressure-assisted nanocrystallization is discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125144
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  • 10
    Electronic Resource
    Electronic Resource
    Photovoltaic effect of cubic GaN/GaAs(100) (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3823-3825 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the photovoltaic effect in cubic GaN on GaAs at room temperature. The photovoltaic spectra of cubic GaN epitaxial film were concealed by the photovoltaic effect from the GaAs substrate unless additional illumination of a 632.8 nm He–Ne laser beam was used to remove the interference of the GaAs absorption in the measurement. On the basis of the near-band-edge photovoltaic spectra of cubic GaN, we obtained the minority carrier diffusion lengths of about 0.32 and 0.14 μm for two undoped n-type cubic GaN samples with background concentrations of 1014 and 1018 cm−3, respectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125468
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