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  • 1
    Electronic Resource
    Electronic Resource
    Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3762-3764 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strains in cubic GaN films grown on GaAs (001) were measured by a triple-axis x-ray diffraction method. Residual strains in the as-grown epitaxial films were in compression, contrary to the predicted tensile strains caused by large lattice mismatch between epilayers and GaAs substrates (20%). It was also found that the relief of strains in the GaN films has a complicated dependence on the growth conditions. We interpreted this as the interaction between the lattice mismatch and thermal mismatch stresses. The fully relaxed lattice constants of cubic GaN are determined to be 4.5038±0.0009 Å, which is in excellent agreement with the theoretical prediction of 4.503 Å. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288779
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  • 2
    Electronic Resource
    Electronic Resource
    Room-temperature optical transitions in Mg-doped cubic GaN/GaAs(100) grown by metalorganic chemical vapor deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2064-2066 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of room-temperature optical transitions in a Mg-doped cubic GaN epilayer grown on GaAs(100) by metalorganic chemical vapor deposition has been investigated. By examining the dependence of photoluminescence on the excitation intensity (which varied over four orders) at room temperature, four different emissions with different origins were identified. A blue emission at ∼3.037 eV was associated with a shallow Mg acceptor, while three different lower-energy emissions at ∼2.895, ∼2.716, and ∼2.639 eV were associated with a deep Mg complex. In addition to a shallow acceptor at E≅0.213 eV, three Mg-related deep defect levels were also found at around 215, 374, and 570 meV (from the conduction band). © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372139
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of rapid thermal annealing on the optical properties of GaNxAs1−x/GaAs single quantum well structure grown by molecular beam epitaxy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 245-248 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of rapid thermal annealing (RTA) on the optical properties of GaNxAs1−x/GaAs strained single quantum well (SQW) was studied by low-temperature photoluminescence (PL). The GaNxAs1−x/GaAs SQW structures were prepared by dc active nitrogen plasma assisted molecular beam epitaxy. PL measurements on a series of samples with different well widths and nitrogen compositions were used to evaluate the effects of RTA. The annealing temperature and time were varied from 650 to 850 °C and 30 s to 15 min, respectively. Remarkable improvements of the optical properties of the samples were observed after RTA under optimum conditions. The interdiffusion constants have been calculated by taking into account error function diffusion and solving the Schrodinger equation. The estimated interdiffusion constants D are 10−17–10−16 cm2/s for the earlier annealing conditions. Activation energies of 6–7 eV are obtained by fitting the temperature dependence of the interdiffusion constants. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371852
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2488-2490 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy were studied. Photoluminescence measurements on a series of samples with different well widths and N compositions were used to evaluate the effects. The intermixing of GaNAs and GaAs layers was clearly enhanced by the presence of a SiO2-cap layer. However, it was strongly dependent on the N composition. After annealing at 900 °C for 30 s, a blueshift up to 62 meV was observed for the SiO2-capped region of the sample with N composition of 1.5%, whereas only a small blueshift of 26 meV was exhibited for the bare region. For the sample with the N composition of 3.1%, nearly identical photoluminescence peak energy shift for both the SiO2-capped region and the bare region was observed. It is suggested that the enhanced intermixing is mainly dominated by SiO2-capped layer induced defects-assisted diffusion for the sample with smaller N composition, while with increasing N composition, the diffusion assisted by interior defects become predominant. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367276
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  • 5
    Electronic Resource
    Electronic Resource
    Investigation of periodicity fluctuations in strained (GaNAs)1(GaAs)m superlattices by the kinematical simulation of x-ray diffraction (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 223-225 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Periodicity fluctuations of layer thickness and composition in a superlattice not only decrease the intensity, they also broaden the width of the satellite peaks in the x-ray diffraction pattern. In this letter, we develop a method that is dependent on the width of satellite peaks to assess periodicity fluctuations of a superlattice quickly. A linear relation of the magnitude of fluctuations, peak width and peak order has been derived from x-ray diffraction kinematical theory. By means of this method, periodicity fluctuations in strained (GaNAs)1(GaAs)m superlattices grown on GaAs substrates by molecular beam epitaxy have been studied. Distinct satellite peaks indicate that the superlattices are of high quality. The N composition of 0.25 and its fluctuation of 20% in a strained GaNxAs1−x monolayer are obtained from simulations of the measured diffraction pattern. The x-ray simulations and in situ observation results of reflection high-energy electron diffraction are in good agreement. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124329
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  • 6
    Electronic Resource
    Electronic Resource
    Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 214-216 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the growth of GaInNAs by a plasma-assisted molecular-beam epitaxy (MBE). It was found that the N-radicals were incorporated into the epitaxial layer like dopant atoms. In the range of 400–500 °C, the growth temperature (Tg) mainly affected the crystal quality of GaInNAs rather than the N concentration. The N concentration dropped rapidly when Tg exceeded 500 °C. Considering N desorption alone is insufficient to account for the strong falloff of the N concentration with Tg over 500 °C, the effect of thermally-activated N surface segregation must be taken into account. The N concentration was independent of the arsenic pressure and the In concentration in GaInNAs layers, but inversely proportional to the growth rate. Based on the experimental results, a kinetic model including N desorption and surface segregation was developed to analyze quantitatively the N incorporation in MBE growth. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126928
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1280-1282 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of rapid thermal annealing (RTA) on GaInNAs/GaAs quantum wells (QWs) grown by molecular-beam epitaxy using a dc plasma as the N source. It was found that RTA at low temperature (LT, 650 °C) and high temperature (HT, 900 °C) could both improve the QW quality significantly. To clarify the mechanism of quality improvement by RTA, a magnetic field perpendicular to the path of the N plasma flux was applied during the growth of the GaInNAs layers for the sake of comparison. It was found that LT-RTA mainly removed dislocations at interfaces related to the ion bombardment, whereas, HT-RTA further removed dislocations originating from the growth. LT-RTA caused only a slight blueshift of photoluminescence peak wavelength, probably due to defect-assisted interdiffusion of In–Ga at the QW interfaces. The blueshift caused by HT-RTA, on the other hand, was much larger. It is suggested that this is due to the fast defect-assisted diffusion of N–As at the QW interfaces. As defects are removed by annealing, the diffusion of In–Ga at interfaces would be predominant. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289916
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  • 8
    Electronic Resource
    Electronic Resource
    Optical characterization of high-purity cubic GaN grown on GaAs (001) substrate by metalorganic chemical vapor deposition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3025-3027 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of cubic GaN films have been investigated in the temperature range of 10–300 K. Five peaks were observed at 10 K. From the dependence of photoluminescence emissions on the temperature and excitation intensity, we have assigned two of the five peaks (2.926 and 2.821 eV) to donor–acceptor pair (DAP) transitions. Furthermore, these two peaks were found to be related to a common shallow donor involved in the peak position previously reported at 3.150 eV. The intensities of DAP transitions were much weaker than that of excitonic emission even at low temperature, indicating a relatively high purity of our samples. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126567
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  • 9
    Electronic Resource
    Electronic Resource
    On the application of input-output analysis to energy issues
    Amsterdam : Elsevier
    Energy Economics 12 (1990), S. 71-76 
    Details
    ISSN: 0140-9883
    Keywords: Impact ; Input-output model ; Multiplier
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Economics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0140-9883(90)90010-D
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  • 10
    Electronic Resource
    Electronic Resource
    Sources of change in industrial electricity use in the Taiwan economy, 1976-1986
    Amsterdam : Elsevier
    Energy Economics 16 (1994), S. 115-120 
    Details
    ISSN: 0140-9883
    Keywords: Electricity use ; Industry ; Input-output analysis
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Economics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0140-9883(94)90005-1
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