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  • PHYSICS, ATOMIC, MOLECULAR, AND NUCLEAR  (10)
  • SOLID-STATE PHYSICS  (7)
  • Aerosols  (2)
  • 1
    Publikationsdatum: 2001-02-13
    Beschreibung: The Indian Ocean Experiment (INDOEX) was an international, multiplatform field campaign to measure long-range transport of air pollution from South and Southeast Asia toward the Indian Ocean during the dry monsoon season in January to March 1999. Surprisingly high pollution levels were observed over the entire northern Indian Ocean toward the Intertropical Convergence Zone at about 6 degrees S. We show that agricultural burning and especially biofuel use enhance carbon monoxide concentrations. Fossil fuel combustion and biomass burning cause a high aerosol loading. The growing pollution in this region gives rise to extensive air quality degradation with local, regional, and global implications, including a reduction of the oxidizing power of the atmosphere.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Lelieveld, J -- Crutzen, P J -- Ramanathan, V -- Andreae, M O -- Brenninkmeijer, C M -- Campos, T -- Cass, G R -- Dickerson, R R -- Fischer, H -- de Gouw, J A -- Hansel, A -- Jefferson, A -- Kley, D -- de Laat, A T -- Lal, S -- Lawrence, M G -- Lobert, J M -- Mayol-Bracero, O L -- Mitra, A P -- Novakov, T -- Oltmans, S J -- Prather, K A -- Reiner, T -- Rodhe, H -- Scheeren, H A -- Sikka, D -- Williams, J -- New York, N.Y. -- Science. 2001 Feb 9;291(5506):1031-6.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Max-Planck-Institute for Chemistry, Post Office Box 3060, D-55020 Mainz, Germany. lelieveld@mpch-mainz.mpg.de〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/11161214" target="_blank"〉PubMed〈/a〉
    Schlagwort(e): Aerosols ; Agriculture ; *Air Pollution ; Asia ; Asia, Southeastern ; Atmosphere ; Biomass ; Carbon ; Carbon Monoxide ; Coal Ash ; Fossil Fuels ; Industrial Waste ; Nitrogen Oxides ; Oceans and Seas ; Ozone ; Particulate Matter ; Seasons
    Print ISSN: 0036-8075
    Digitale ISSN: 1095-9203
    Thema: Biologie , Chemie und Pharmazie , Informatik , Medizin , Allgemeine Naturwissenschaft , Physik
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Publikationsdatum: 2002-10-26
    Beschreibung: The Mediterranean Intensive Oxidant Study, performed in the summer of 2001, uncovered air pollution layers from the surface to an altitude of 15 kilometers. In the boundary layer, air pollution standards are exceeded throughout the region, caused by West and East European pollution from the north. Aerosol particles also reduce solar radiation penetration to the surface, which can suppress precipitation. In the middle troposphere, Asian and to a lesser extent North American pollution is transported from the west. Additional Asian pollution from the east, transported from the monsoon in the upper troposphere, crosses the Mediterranean tropopause, which pollutes the lower stratosphere at middle latitudes.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Lelieveld, J -- Berresheim, H -- Borrmann, S -- Crutzen, P J -- Dentener, F J -- Fischer, H -- Feichter, J -- Flatau, P J -- Heland, J -- Holzinger, R -- Korrmann, R -- Lawrence, M G -- Levin, Z -- Markowicz, K M -- Mihalopoulos, N -- Minikin, A -- Ramanathan, V -- De Reus, M -- Roelofs, G J -- Scheeren, H A -- Sciare, J -- Schlager, H -- Schultz, M -- Siegmund, P -- Steil, B -- Stephanou, E G -- Stier, P -- Traub, M -- Warneke, C -- Williams, J -- Ziereis, H -- New York, N.Y. -- Science. 2002 Oct 25;298(5594):794-9.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Max Planck Institute for Chemistry, Post Office Box 3060, 55020 Mainz, Germany. lelieveld@mpch-mainz.mpg.de〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/12399583" target="_blank"〉PubMed〈/a〉
    Schlagwort(e): Aerosols ; *Air Pollutants ; *Air Pollution ; Asia ; Atmosphere ; *Carbon Monoxide ; Climate ; Europe ; Mediterranean Region ; North America ; Ozone ; Weather
    Print ISSN: 0036-8075
    Digitale ISSN: 1095-9203
    Thema: Biologie , Chemie und Pharmazie , Informatik , Medizin , Allgemeine Naturwissenschaft , Physik
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    facet.materialart.
    Unbekannt
    In:  Other Sources
    Publikationsdatum: 2011-08-24
    Beschreibung: After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the area of crystal growth and device fabrication technology. High quality of single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.
    Schlagwort(e): SOLID-STATE PHYSICS
    Materialart: In: Space nuclear power systems; Proceedings of the 8th Symposium, Albuquerque, NM, Jan. 6-10, 1991. Pt. 3 (A93-13751 03-20); p. 954-959.
    Format: text
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  • 4
    Publikationsdatum: 2013-08-31
    Beschreibung: In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.
    Schlagwort(e): SOLID-STATE PHYSICS
    Materialart: NASA, Washington, Technology 2000, Volume 2; p 171-178
    Format: application/pdf
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  • 5
    Publikationsdatum: 2013-08-31
    Beschreibung: Viewgraphs on silicon carbide semiconductor technology and its potential for enabling electronic devices to function in high temperature and high radiation environments are presented. Topics covered include silicon carbide; sublimation growth of 6H-SiC boules; SiC chemical vapor deposition reaction system; 6H silicon carbide p-n junction diode; silicon carbide MOSFET; and silicon carbide JFET radiation response.
    Schlagwort(e): SOLID-STATE PHYSICS
    Materialart: Nuclear Propulsion Technical Interchange Meeting, Volume 1; p 445-452
    Format: application/pdf
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  • 6
    facet.materialart.
    Unbekannt
    In:  Other Sources
    Publikationsdatum: 2019-05-30
    Beschreibung: Radiative lifetimes of strongest vacuum UV MULTIPLETS of B I, B II, C I, C II, N I and N II measured by phase shift method
    Schlagwort(e): PHYSICS, ATOMIC, MOLECULAR, AND NUCLEAR
    Format: text
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  • 7
    facet.materialart.
    Unbekannt
    In:  CASI
    Publikationsdatum: 2019-05-30
    Beschreibung: Dipole integrals for nonmetal resonance transition probabilities
    Schlagwort(e): PHYSICS, ATOMIC, MOLECULAR, AND NUCLEAR
    Materialart: NASA-CR-78378
    Format: application/pdf
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  • 8
    Publikationsdatum: 2019-05-30
    Beschreibung: Resonance transition probabilities in intermediate coupling for neutral nonmetals
    Schlagwort(e): PHYSICS, ATOMIC, MOLECULAR, AND NUCLEAR
    Materialart: NASA-CR-78374
    Format: application/pdf
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  • 9
    facet.materialart.
    Unbekannt
    In:  Other Sources
    Publikationsdatum: 2019-06-27
    Beschreibung: The energy difference between the 2S(sub 1/2) levels in the O-16(7+) ion has been determined by means of a Stark-quenching experiment to be 2215.6 plus or minus 7.5 GHz. The uncertainty is based on measured quantities only. This result is shown to be in agreement with the results of similar measurements made by other authors.
    Schlagwort(e): PHYSICS, ATOMIC, MOLECULAR, AND NUCLEAR
    Materialart: Physical Review Letters; 28; June 19
    Format: text
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  • 10
    Publikationsdatum: 2019-06-27
    Beschreibung: Absolute absorption values of four strongest bands in molecular N dipole, determining oscillator strengths
    Schlagwort(e): PHYSICS, ATOMIC, MOLECULAR, AND NUCLEAR
    Materialart: ; L AVIV AND HAIFA, IS
    Format: text
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