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  • 81.10.Jt  (1)
  • Atom, molecule, and ion impact  (1)
  • Polymer and Materials Science  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Deuterium-deuterium fusion by an activated precursor (1991)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 13 (1991), S. 1347-1359 
    Details
    ISSN: 0392-6737
    Keywords: 2H-induced reactions and scattering ; Atom, molecule, and ion impact ; Plasma sources
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary A general scheme is proposed for the interpretation of the phenomena involving low-energy hydrogen-isotope fusion. This scheme is especially developed for the interpretation of the fusion rate observed after the impact of heavy-water clusters (D2O) n , 25≲n≲1350, onto targets of titanium deuteride TiD. It is shown that 1) the impinging energy of large clusters or molecules is equiparted among a lot of target atoms which are brought in collective motion; 2) data can conveniently be represented in an Arrhenius plot; 3) this plot suggests that fusion is a thermally activated process from a metastable precursor; 4) the activation energy for the precursor formation isE *≃2E 0 (E 0 being the electron binding energy in the hydrogen atom), and 5) the activated precursor can reasonably be identified with the metastable binuclear heliumlike (D+D+)2e− atom.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457123
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  • 2
    Electronic Resource
    Electronic Resource
    Dissociation of PtSi, NiSi and PdGe in presence of Pt, Ni and Pd films, respectively (1979)
    Springer
    Applied physics 18 (1979), S. 285-289 
    Details
    ISSN: 1432-0630
    Keywords: 81.10.Jt ; 81.30Bx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract 4He+ ions backscattering spectrometry and x-ray diffractometry were used to study interactions between PtSi and Pt, NiSi and Ni, PdGe and Pd. Due to the dissociation of the compound the formation of a phase richer in metal was observed to grow at the original compound/metal interface in the temperature range considered, 280–325°C for Pt2Si, 325°C for Ni2Si and 180–260°C for Pd2Ge. The growth kinetics of these new phases (Pt2Si and Pd2Ge) follow a parabolic relation between thickness and annealing time. At a given temperature the growth rate of Pt2Si and Pd2Ge in compound-metal structure is a factor $$\sqrt 2$$ higher than in the usual semiconductor-metal structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00885516
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  • 3
    Electronic Resource
    Electronic Resource
    Low temperature oxidation of titanium and titanium silicide (1986)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 9 (1986), S. 329-329 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740090513
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