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  • Chemistry  (4)
  • 78.70Bj  (1)
  • Electron states  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Point-defect production in arsenic-doped silicon studied with variable-energy positrons (1989)
    Springer
    Applied physics 49 (1989), S. 335-339 
    Details
    ISSN: 1432-0630
    Keywords: 68.35.Dv ; 68.55Bd ; 78.70Bj
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Silicon epilayers grown by molecular beam epitaxy and doped in-situ using low-energy implantation were examined using a variable-energy positron beam. The samples had been previously characterized using electrical measurements, ion channeling, SIMS, and electron microscopy. The positron results show that defects have been created in layers grown at 460°C and in the highly doped layers grown at 700°C. The assignment of defect structures is difficult at present, but is consistent with the formation of As clusters or Asvacancy complexes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616864
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  • 2
    Electronic Resource
    Electronic Resource
    Positron systematics in annealed metals (1976)
    Springer
    Applied physics 9 (1976), S. 259-260 
    Details
    ISSN: 1432-0630
    Keywords: Positron annihilation ; Electron states
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abtract Deconvoluted Doppler-broadened annihilation energy spectra in annealed metals are fitted by a parabola and a Gaussian function whose width and intensity vary systematically with the atomic number.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900614
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  • 3
    Electronic Resource
    Electronic Resource
    Back-side SIMS profiles of dopant redistribution under silicide films (1990)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 15 (1990), S. 451-453 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Samples suitable for sputter depth profiling of surface films from the substrate into the film have been produced by selective removal of most of the underlying silicon substrate. This procedure, which reduces problems due to collisional mixing and redeposition of sputtered material, was accomplished by the controlled growth of a boron-rich etch-stop layer using molecular beam epitaxy followed by selective chemical etching. The usefulness of this approach has been demonstrated by studying the redistribution of As during the growth of platinum and cobalt silicides with secondary ion mass spectrometry (SIMS).
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740150710
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  • 4
    Electronic Resource
    Electronic Resource
    Calibration of argon ion sputter rates using nuclear microanalysis and Auger spectroscopy (1985)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 7 (1985), S. 105-108 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Auger electron spectroscopy (AES), in conjunction with argon ion sputtering, is frequently used to obtain composition versus depth profiles. Thin film thicknesses may be estimated from such profiles if the argon ion sputtering rate of a particular material is known. For this work, a series of oxide standards was prepared and calibrated with nuclear microanalysis techniques. These standards were then used to calibrate the composition versus depth profiles obtained using AES.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740070209
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of analytical method on thickness measurements of thin oxide films (1988)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 11 (1988), S. 441-446 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The thickness of thin natural oxide films formed on silicon, nickel, aluminium, iron, tantalum and zirconium has been measured using nuclear reaction analysis (NRA) and Auger electron spectroscopy (AES) in combination with ion beam sputtering. It is shown that ion beam effects severely limit the use of AES and ion beam sputtering in measuring thin oxide thicknesses. Relatively non-destructive techniques such as NRA or angle-resolved x-ray photoelectron spectroscopy (XPS) provide more reliable information.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740110806
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  • 6
    Electronic Resource
    Electronic Resource
    Void formation at silicon nitride/silicon interfaces studied by variable-energy positrons (1994)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 21 (1994), S. 839-845 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Variable-energy positrons (VEP) were used to study the deppth distribution of defects in SiNx/Si structures fabricated using ditertiary butyl silane (CONSI 4000) as the silicon precursor in an electron cyclotron resonance plasma chemical vapour deposition system. Films were grown to thicknesses ranging from 500 to 3500 Å at substrate temperatures between room temperature and 400°C and under various plasma conditions. The VEP results give evidence for differing concentrations of very large open-volume defects at several of the SiNx/Si interfaces, confirmed by transmission and scanning electron microscopy. Their presence was correlated with non-reactive organosilicon adsorption on the substrates prior to the thin film deposition.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740211204
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