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  • 1
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    The genome of the natural genetic engineer Agrobacterium tumefaciens C58 (2001)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2001-12-18
    Description: The 5.67-megabase genome of the plant pathogen Agrobacterium tumefaciens C58 consists of a circular chromosome, a linear chromosome, and two plasmids. Extensive orthology and nucleotide colinearity between the genomes of A. tumefaciens and the plant symbiont Sinorhizobium meliloti suggest a recent evolutionary divergence. Their similarities include metabolic, transport, and regulatory systems that promote survival in the highly competitive rhizosphere; differences are apparent in their genome structure and virulence gene complement. Availability of the A. tumefaciens sequence will facilitate investigations into the molecular basis of pathogenesis and the evolutionary divergence of pathogenic and symbiotic lifestyles.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Wood, D W -- Setubal, J C -- Kaul, R -- Monks, D E -- Kitajima, J P -- Okura, V K -- Zhou, Y -- Chen, L -- Wood, G E -- Almeida, N F Jr -- Woo, L -- Chen, Y -- Paulsen, I T -- Eisen, J A -- Karp, P D -- Bovee, D Sr -- Chapman, P -- Clendenning, J -- Deatherage, G -- Gillet, W -- Grant, C -- Kutyavin, T -- Levy, R -- Li, M J -- McClelland, E -- Palmieri, A -- Raymond, C -- Rouse, G -- Saenphimmachak, C -- Wu, Z -- Romero, P -- Gordon, D -- Zhang, S -- Yoo, H -- Tao, Y -- Biddle, P -- Jung, M -- Krespan, W -- Perry, M -- Gordon-Kamm, B -- Liao, L -- Kim, S -- Hendrick, C -- Zhao, Z Y -- Dolan, M -- Chumley, F -- Tingey, S V -- Tomb, J F -- Gordon, M P -- Olson, M V -- Nester, E W -- GM19642/GM/NIGMS NIH HHS/ -- GM32618/GM/NIGMS NIH HHS/ -- New York, N.Y. -- Science. 2001 Dec 14;294(5550):2317-23.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Microbiology, University of Washington, 1959 NE Pacific Street, Box 357242, Seattle, WA 98195, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/11743193" target="_blank"〉PubMed〈/a〉
    Keywords: Agrobacterium tumefaciens/classification/*genetics/pathogenicity/physiology ; Bacterial Adhesion/genetics ; Bacterial Proteins/genetics/metabolism ; Carrier Proteins/genetics/metabolism ; Chromosomes, Bacterial/genetics ; Conjugation, Genetic ; DNA Replication ; Genes, Bacterial ; Genes, Regulator ; *Genome, Bacterial ; Membrane Proteins/genetics/metabolism ; Molecular Sequence Data ; Phylogeny ; Plants/microbiology ; Plasmids ; Replicon ; Rhizobiaceae/genetics/physiology ; *Sequence Analysis, DNA ; Sinorhizobium meliloti/genetics/physiology ; Symbiosis ; Virulence/genetics
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 2
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    High-speed graphene transistors with a self-aligned nanowire gate (2010)
    Nature Publishing Group (NPG)
    Details
    Publication Date: 2010-09-03
    Description: Graphene has attracted considerable interest as a potential new electronic material. With its high carrier mobility, graphene is of particular interest for ultrahigh-speed radio-frequency electronics. However, conventional device fabrication processes cannot readily be applied to produce high-speed graphene transistors because they often introduce significant defects into the monolayer of carbon lattices and severely degrade the device performance. Here we report an approach to the fabrication of high-speed graphene transistors with a self-aligned nanowire gate to prevent such degradation. A Co(2)Si-Al(2)O(3) core-shell nanowire is used as the gate, with the source and drain electrodes defined through a self-alignment process and the channel length defined by the nanowire diameter. The physical assembly of the nanowire gate preserves the high carrier mobility in graphene, and the self-alignment process ensures that the edges of the source, drain and gate electrodes are automatically and precisely positioned so that no overlapping or significant gaps exist between these electrodes, thus minimizing access resistance. It therefore allows for transistor performance not previously possible. Graphene transistors with a channel length as low as 140 nm have been fabricated with the highest scaled on-current (3.32 mA mum(-1)) and transconductance (1.27 mS mum(-1)) reported so far. Significantly, on-chip microwave measurements demonstrate that the self-aligned devices have a high intrinsic cut-off (transit) frequency of f(T) = 100-300 GHz, with the extrinsic f(T) (in the range of a few gigahertz) largely limited by parasitic pad capacitance. The reported intrinsic f(T) of the graphene transistors is comparable to that of the very best high-electron-mobility transistors with similar gate lengths.〈br /〉〈br /〉〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2965636/" target="_blank"〉〈img src="https://static.pubmed.gov/portal/portal3rc.fcgi/4089621/img/3977009" border="0"〉〈/a〉   〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2965636/" target="_blank"〉This paper as free author manuscript - peer-reviewed and accepted for publication〈/a〉〈br /〉〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Liao, Lei -- Lin, Yung-Chen -- Bao, Mingqiang -- Cheng, Rui -- Bai, Jingwei -- Liu, Yuan -- Qu, Yongquan -- Wang, Kang L -- Huang, Yu -- Duan, Xiangfeng -- 1DP2OD004342-01/OD/NIH HHS/ -- DP2 OD004342-01/OD/NIH HHS/ -- England -- Nature. 2010 Sep 16;467(7313):305-8. doi: 10.1038/nature09405. Epub 2010 Sep 1.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90095, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/20811365" target="_blank"〉PubMed〈/a〉
    Keywords: Calibration ; Carbon/*chemistry ; Electric Capacitance ; Electrodes ; Electronics/*instrumentation ; Nanowires/*chemistry/ultrastructure ; Temperature ; *Transistors, Electronic
    Print ISSN: 0028-0836
    Electronic ISSN: 1476-4687
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Published by Nature Publishing Group (NPG)
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