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  • American Institute of Physics (AIP)  (6)
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  • 1
    Electronic Resource
    Electronic Resource
    Gettering of Au to dislocations and cavities in silicon (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 416-418 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gettering of ion implanted Au to defects in Si has been studied using Rutherford backscattering and channeling and transmission electron microscopy. Damage from a Si implant anneals into dislocations which can efficiently trap diffusing Au. The damage introduced by a H implant evolves during annealing into cavities which getter close to 100% of the Au, leaving very little Au in solution. This process is driven by the diffusion of a supersaturated solid solution of Au to a favorable sink. The internal surfaces of cavities are the most favorable sink, followed by dislocations and then the Si surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114647
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  • 2
    Electronic Resource
    Electronic Resource
    Interferometric measurement of the pressure-enhanced crystallization rate of amorphous Si (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2583-2585 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the pressure dependence of the solid phase epitaxial growth rate of self-implanted Si (100) by using the in situ time-resolved interferometric technique in a high-temperature and high-pressure diamond anvil cell. With fluid argon as the pressure transmission medium, a clean and perfectly hydrostatic pressure environment is achieved around the sample. The external heating geometry employed provides a uniform temperature across the sample. At temperatures in the range of 530–550 °C and pressures up to 3.2 GPa (32 kbar), the growth rate is enhanced by up to a factor of 5 over that at 1 atmosphere pressure. The results are characterized by a negative activation volume of approximately −3.3 cm3/mole (−28% of the atomic volume). These results show a significantly weaker pressure dependence than does the previous work of Nygren et al. [Appl. Phys. Lett. 47, 232 (1985)], who found an activation volume of −8.7 cm3/mole. The implication of this measurement for the nature of the defects responsible for crystal growth is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101056
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  • 3
    Electronic Resource
    Electronic Resource
    Diffusivity of gold in amorphous silicon measured by the artificial multilayer technique (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2094-2096 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Artificial multilayers of amorphous Si and amorphous Si containing 0.7 at. % Au, with repeat lengths between 44 and 48A, were fabricated by ion beam sputtering. The change, with annealing time in the intensity of the first-order x-ray diffraction peak resulting from the composition modulation, is used to determine the diffusivity of Au in amorphous Si. Diffusion lengths on the order of an interatomic distance have been measured. The diffusivities over the temperature range 200–260 °C have an Arrhenius-type temperature dependence with an activation enthalpy of about 1.3 eV, and are in agreement with the extrapolation of published higher temperature data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102983
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  • 4
    Electronic Resource
    Electronic Resource
    Pressure-enhanced solid phase epitaxy of germanium (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 137-139 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the effect of pressure on the solid phase epitaxial growth rate of Ge(100) into self-implanted amorphous Ge by using in situ time-resolved infrared interferometry in a high-temperature, high-pressure diamond anvil cell. In the temperature range 300–365 °C, a rate enhancement of more than a factor of 100 over that at ambient pressure has been observed due to hydrostatic pressures of up to 5.2 GPa (52 kbar). The pressure enhancement is characterized by a negative activation volume of −6.2±0.6 cm3/mol (−45% of the atomic volume), which is of the same sign but greater in magnitude than we found in Si. We conclude that the defects controlling the solid phase epitaxy of Ge cannot be vacancies in the crystal, that mechanisms based on other point defects migrating to the interface from either phase are unlikely, and that mechanisms based on point defects residing in the interface are plausible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103053
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  • 5
    Electronic Resource
    Electronic Resource
    Impurity-stimulated crystallization and diffusion in amorphous silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 439-441 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An amorphous-to-polycrystalline silicon transformation and concomitant In redistribution have been observed in In-implanted silicon at temperatures well below those at which solid phase epitaxial growth or random crystallization is observed in undoped films. The process is extremely rapid and exhibits a strong dependence on both In concentration and temperature. It is proposed that the In redistribution and accompanying silicon crystallization are mediated by molten, In-rich precipitates in amorphous silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99436
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  • 6
    Electronic Resource
    Electronic Resource
    Ion-beam-induced epitaxial crystallization kinetics in ion implanted GaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6567-6569 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin amorphous GaAs layers on (100)-oriented substrates, generated by Si+ ion bombardment at 77 K, have been observed to recrystallize epitaxially during 1.5-MeV Ne+ bombardment in the temperature range 75–135 °C. Crystallization proceeds linearly with increasing ion fluence, except in the near-surface region, and the process is characterized by an activation energy of 0.16 eV, which is an order of magnitude smaller than that obtained for conventional thermal annealing at much higher temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342029
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