Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 1226-1228
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Thermionic emission rates are reported for electrons in GaAs epilayers, where electrostatic barriers within the layers and GaAs/AlAs heterojunctions form different sides of the potential well. Attempt times at the two barrier types were observed to differ by factors above 107 due to differing constraints on momentum conservation during emission. These emissions represent escape mechanisms for charge stored in a closed geometry, III-V compound floating gate transistor, with potential application as dynamic random access or nonvolatile memories.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101662
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