ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

You have 0 saved results.
Mark results and click the "Add To Watchlist" link in order to add them to this list.
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Publication Date: 2014-11-05
    Description: Acceleration in development of additional conventional hydropower requires tools and methods to perform laboratory and in-field validation of turbine performance and fish passage claims. The new-generation Sensor Fish has been developed with more capabilities to accommodate a wider range of users over a broader range of turbine designs and operating environments. It provides in situ measurements of three-dimensional (3D) linear accelerations, 3D rotational velocities, 3D orientation, pressure, and temperature at a sampling frequency of 2048 Hz. It also has an automatic floatation system and built-in radio-frequency transmitter for recovery. The relative errors of the pressure, acceleration, and rotational velocity were within ±2%, ±5%, and ±5%, respectively. The accuracy of orientation was within ±4° and accuracy of temperature was ±2 °C. The new-generation Sensor Fish is becoming a major technology and being deployed for evaluating the conditions for fish passage of turbines or other hydraulic structures in both the United States and several other countries.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4673-4679 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAsP/InP strained multiple quantum wells (MQWs) were grown on InP (111)B and (100) substrates by gas-source molecular-beam epitaxy. Specular surfaces were obtained under optimized growth conditions on InP (111)B substrates miscut 1° to the 〈110〉 direction. Photoluminescence, absorption and photoluminescence excitation spectra were taken for InAsP/InP strained MQWs at low temperature. Distinct optical transitions were resolved. Energy-level calculations were carried out for both (111)B and (100) MQWs by taking into account the differences in elastic deformation, strain-induced band-edge shift, valence-band anisotropy, and the piezoelectric effect. The peaks were successfully assigned as different interband excitonic transitions. The best fit of the energy-level calculation to the experimental spectra suggests that the valence-band offset ratios (Qv=ΔEv/ΔEg) for (111)B and (100) InAsP/InP heterostructures are 0.35 and 0.30, respectively. This dependence on the substrate orientation was accounted for in terms of the strain-induced band-edge shift.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 10660-10663 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a new experimental approach to the study of vibrational relaxation of highly vibrationally excited molecules at solid surfaces. We observe NO in v=13 and 15 losing up to five vibrational quanta in collisions with an O-covered copper surface. The data indicate this vibrational relaxation occurs via a direct scattering mechanism. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 9702-9705 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have determined the alignment of D2(v,J) desorbed from Cu(111). The measurements reveal a small preference for "helicoptering'' motion that increases with increasing J. At low J, the alignments are much smaller than predicted by recent calculations. We believe that the anisotropic potential may scramble the alignment as the molecules leave the surface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1645-1647 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the optical study of the interband transitions in InAsxP1−x/InP strained-layer multiple quantum wells grown by gas-source molecular beam epitaxy. Low-temperature photoluminescence, photoluminescence excitation, and room temperature photomodulated transmission measurements were performed to investigate optical interband transitions. In addition to transitions associated with the heavy-hole and the light-hole bands, a transition involved with the spin-orbit split-off band was observed. We also observed spectral linewidth broadening due to compositional inhomogeneity and layer-thickness fluctuations from the sample using short-period superlattices as the well materials. Calculations based on the envelope-function approximation and phenomenological deformation potential theory, including both band nonparabolicity and strain-induced valence-band mixing, were compared with experimental data to identify the optical transitions between quantized states in the wells. We found good agreement between theory and experiment.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 254-256 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phosphorus-controlled growth rate of homoepitaxial (100) InP, GaP, and AlP on GaP substrates by gas source molecular beam epitaxy was investigated. Elemental group-III sources and thermally cracked phosphine were used. The growth rate was monitored by the specular beam intensity oscillations of reflection high-energy electron diffraction. This technique gives exact values of V/III ratio on the surface by measuring the amount of phosphorus which is actually incorporated into the film. Here the V/III ratio is defined as P-controlled growth rate divided by group-III-controlled growth rate instead of the beam flux V/III ratio. Also the phosphorus surface desorption activation energies were measured to be 0.61 eV and in the range between 0.89 and 0.97 eV for InP and GaP, respectively.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2954-2956 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAsxP1−x/InP strained multiple quantum wells with strain as high as 2.5% were grown by gas-source molecular beam epitaxy. Successful control of the arsenic composition over a wide range was achieved by two different growth techniques. Structural and optical studies, such as high-resolution x-ray rocking curve, cross-sectional transmission electron microscopy, photoluminescence, and absorption measurement, indicate that we have obtained high quality multiple quantum wells that are suitable for optoelectronic applications.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 475-477 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the intersubband transitions on pressure in strained In0.15Ga0.85As/GaAs multiple quantum wells has been studied in two samples with well widths of 8 and 15 nm, respectively, with photomodulated transmission spectroscopy by using a diamond anvil cell. The pressure coefficients of the energies for the intersubband transitions were found to depend significantly on the well widths and to be smaller than that of the band gap of constituents in bulk form. These results suggested that the critical thickness for strained In0.15Ga0.85As/GaAs layer should be smaller than 15 nm.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3600-3602 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon doping and the parasitic growth-rate reduction with carbon-tetrachloride (CCl4) in AlxGa1−xAs was studied in the entire Al composition range for metalorganic vapor phase epitaxial growth. The doping efficiency in AlGaAs was found to increase by two orders of magnitude when the Al composition in AlxGa1−xAs changed from 0 to 1. The parasitic growth rate reduction, however, decreased by a factor of 15 when x changed from 0 to 1. This reduction of growth rate was confirmed to be caused by the etching of the material from the surface by Cl radicals cracked from CCl4. This strong compositional selectivity of the doping and etching has potential implications for lateral definition of growth on patterned surfaces. The doping and etching behaviors were also studied as a function of the growth temperature. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2870-2872 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective wet oxidation of AlGaAs layers can be used to form embedded optical elements, such as buried lenses and current control apertures in vertical cavity structures. Oxidation rates of buried Al0.94Ga0.06As layers were controlled by varying the thickness of GaAs barrier layers between layers of Al0.94Ga0.06As and Al0.98Ga0.02As. This phenomenon can be attributed to the superposition of a vertical oxidation component due to species diffusing through the barrier layer and a constant lateral oxidation component. The magnitude of the vertical component is controlled by the GaAs barrier thickness, which determines the concentration of additional oxidizing species in the Al0.94Ga0.06As layer. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...