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  • Wiley  (11,426)
  • National Academy of Sciences  (3,053)
  • American Institute of Physics (AIP)  (2,602)
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  • 1
    Electronic Resource
    Electronic Resource
    Synthesis of the superconducting thin film of HgBa2Ca2Cu3O8+δ (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1723-1725 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: HgBa2Ca2Cu3O8+δ (Hg-1223) superconducting thin films of about 0.3 μm in thickness have been successfully synthesized. The process involves depositing films (∼ 1 μm thickness) of Ba2Ca2Cu3Ox on a SrTiO3 substrate by pulse laser ablation technique and implanting mercury ions into this deposited film, followed by annealing at oxygen atmosphere. The films so obtained show a relatively wide superconducting transition temperature up to 118 K, as determined magnetically, which is similar to that of underdoping bulk Hg-1223. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115887
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  • 2
    Electronic Resource
    Electronic Resource
    Preparation of (100)-oriented metallic LaNiO3 thin films on Si substrates by radio frequency magnetron sputtering for the growth of textured Pb(Zr0.53Ti0.47)O3 (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2643-2645 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly (100)-oriented LaNiO3(LNO) thin films were grown on Si, SiO2/Si, Pt/SiSiO2/Si, as well as glass substrates by rf magnetron sputtering deposition at substrate temperatures ranging from 150 to 500 °C. As-deposited LNO films are metallic; those prepared at substrate temperature ∼150–250 °C have a resistivity of 0.4–0.5 mΩ cm and can be used as the bottom electrode for the fabrication of integrated ferroelectric capacitors on Si. A subsequent deposition of sol-gel derived Pb(Zr0.53Ti0.47)O3 (PZT) thin film on the LNO-coated substrate was also found to have a significant (100)- and (001)-oriented texture. The ferroelectric capacitor fabricated from these films displays a good P–E hysteresis characteristic. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113111
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  • 3
    Electronic Resource
    Electronic Resource
    Streaming vorticity flux from oscillating walls with finite amplitude (1993)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 5 (1993), S. 1933-1938 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: How to describe vorticity creation from a moving wall is a long standing problem. This paper discusses relevant issues at the fundamental level. First, it is shown that the concept of "vorticity flux due to wall acceleration'' can be best understood by following fluid particles on the wall rather than observing the flow at fixed spatial points. This is of crucial importance when the time-averaged flux is to be considered. The averaged flux has to be estimated in a wall-fixed frame of reference (in which there is no flux due to wall acceleration at all); or, if an inertial frame of reference is used, the generalized Lagrangian mean (GLM) also gives the same result. Then, for some simple but typical configurations, the time-averaged vorticity flux from a harmonically oscillating wall with finite amplitude is analyzed, without appealing to small perturbation. The main conclusion is that the wall oscillation will produce an additional mean vorticity flux (a fully nonlinear streaming effect), which is partially responsible for the mechanism of vortex flow control by waves. The results provide qualitative explanation for some experimentally and/or computationally observed phenomena.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.858819
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  • 4
    Electronic Resource
    Electronic Resource
    Electron transport in a resonant-tunneling diode under the effect of a transverse magnetic field: A quantum theory in the Wigner formalism (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1259-1264 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a theoretical study of electron transport in the resonant-tunneling diode under the effects of an in-plane magnetic field. We work in the Wigner formalism. We generalize the formalism to include effects of an in-plane magnetic field. The transport equation is derived for the Wigner distribution function. We solve for the function, from which the charge distribution and the tunnel current are calculated. Discussions of magnetic effects on electron tunneling are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351268
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  • 5
    Electronic Resource
    Electronic Resource
    Identification of the energy levels of Si:Rh (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2251-2255 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two thermostable levels E(0.31) and E(0.58) related to Rh in Si were observed using deep level transient spectroscopy and double correlation deep level transient spectroscopy techniques. By means of thermal annealing and electron irradiation, the microscopic natures of these levels were identified for the first time. The levels E(0.31) and E(0.58) arise from by the same impurity center but have different charge states. Their microstructures are not related to a pure substitutional Rh atom, but correspond to a complex. This result is compared to our self-consistent theoretical calculation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348704
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  • 6
    Electronic Resource
    Electronic Resource
    Physical behavior of ruthenium in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2746-2748 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the physical behavior of Ru atom in silicon in this paper. Two energy levels E(0.58) and H(0.34) were observed. The pure substitutional Ru in silicon was responsible for the H(0.34), and the E(0.58) was introduced by a complex of a Ru atom and a vacancy (or vacancies). By use of scattered wave-Xα (SW-Xα) cluster method the theoretical calculation of electronic states for substitutional Ru atom in silicon has been performed. The results obtained were compared with those of experimental measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348632
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  • 7
    Electronic Resource
    Electronic Resource
    Structure and magnetism of Co1−xMnx alloys epitaxially grown on GaAs(001) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 521-523 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure and magnetism of Co1−xMnx films grown on GaAs(001) substrates were characterized by reflection high energy electron diffraction and magneto-optical Kerr effect measurements. It is found that the Co-rich and Mn-rich films exist in body-centered-cubic and face-centered-cubic structures, respectively. Meanwhile, the Co1−xMnx films show ferromagnetism whenever the structure is bcc, but they show antiferromagnetism or paramagnetism whenever the structure is fcc. This strong correlation established between the structure and magnetism was further studied and confirmed by an ab initio electron linearized augmented-plane-wave calculation with the local-spin-density approximation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1332093
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  • 8
    Electronic Resource
    Electronic Resource
    Magnetoresistance anomaly in DyFeCo thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7209-7211 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microstructured rare-earth–transition-metal DyFeCo films have been investigated using magnetoresistance and extraordinary Hall-effect measurements. The Hall loops reveal variation of coercive fields depending on the linewidth and the composition of the films. The magnetoresistance curves, with changes up to as high as 1.3%, show positive/negative magnetoresistance peaks centered on the coercive fields depending on the linewidth of the films only. The variation of the coercivity can be attributed to the magnetic moment canting between the Dy and FeCo subcomponents and the existence of the diverged magnetization on the edges, and the anomalous magnetoresistance peaks observed are discussed with the existing theories. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357116
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  • 9
    Electronic Resource
    Electronic Resource
    Hysteresis loop of planar Hall effect in CoCr films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5795-5797 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Micrometer devices of Co85Cr15 film with Hall bar shape were made using standard electron beam lithography and lift-off process. The film was thermally deposited without bias field and the sample was kept at room temperature during evaporation. The Hall voltage, measured at room temperature, showed square hysteresis loops with an external magnetic field applied in the direction close to the film plane. Based on the variation of the Hall voltage measured under different directions of external magnetic field, the magnetic easy axis was verified to be along the long axis of the device. The formation of the easy axis along the narrow wire due to the physical confinement as an intrinsic mechanism is discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369922
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  • 10
    Electronic Resource
    Electronic Resource
    Crystallization behavior of a mechanically alloyed amorphous Fe80Zr8B11Cu1 alloy : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5473-5475 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An amorphous alloy of Fe80Zr8B11Cu1 has been prepared by mechanical alloying, milled for 72 h, and annealed in the temperature range from 673 to 1173 K. The crystallization behavior of this sample at different annealing temperatures has been investigated by x-ray diffractometry, electron microscopy, and Mössbauer spectroscopy. With the increase of annealing temperature, about a 15 nm bcc phase is formed in the amorphous base. Upon further increasing the annealing temperature to 1173 K, in addition to the metastable α -Fe (Zr,B) phase, a ZrB2 phase appears. Furthermore, the results from Mössbauer spectroscopy reveal that there are two different magnetic areas in these amorphous phases at different annealing temperatures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362279
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