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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7612-7618 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic hydrogen from plasma discharges dissolves in silicon previously amorphized by ion implantation (aSi) in the form of Si–H bonds, giving rise to infrared (IR) absorption at ∼1990 cm−1 and causing partial activation of implanted dopants. Passivation of aSi does not affect the rate at which the material subsequently undergoes solid phase epitaxy. Exposure giving rise to [H]〉6 at. % causes the appearance of an additional IR absorption band at ∼2080 cm−1 and coloration of the layer. Despite annealing, the Si–H defects, normal solid phase epitaxy does not occur during subsequent heat treatment. The structural modification by H-plasma exposure coincides with etching of the layer. The observations can be understood in terms of void formation in aSi resulting from the clustering of Si–H. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3079-3084 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of laser treatment on the bulk and interface states of the Si-SiO2 structure has been investigated. The annealing was performed prior to the gate metallization using a continuous wave Ar+ laser. For low laser powers the interface state density seems to decrease slightly in comparison with untreated samples. However, for the highest irradiating laser powers a new bulk level at 0.41 eV above the valence band with concentrations up to 1015 cm−3 arises probably due to the electrical activation of the oxygen diluted in the Czochralski silicon. Later postmetallization annealings reduce the interface state density to values in the 1010 cm−2 eV−1 range but leave the concentration of the 0.41-eV center nearly unchanged.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1873-1875 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystalline silicon films were deposited in an electron cyclotron resonance plasma of Ar+H2+SiH4 on (100) and (111) oriented Si substrates without external heating. Before deposition, the substrates were cleaned in situ in an Ar+H2 plasma. This cleaning process caused surface roughness particularly on (100) substrates. Apparently, the excessive roughness of the interface with (100) Si surface prevented complete crystallization of the subsequently deposited films. In contrast, rapid solid phase crystallization of the films deposited on (111) surfaces occurred at around 1000 °C. © 1996 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 870-872 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN photoconductive detectors have been fabricated on sapphire substrates by metal organic vapor phase epitaxy and gas-source molecular beam epitaxy on Si (111) substrates. The photodetectors showed high photoconductor gains, a very nonlinear response with illuminating power, and an intrinsic nonexponential photoconductance recovery process. A novel photoconductor gain mechanism is proposed to explain such results, based on a modulation of the conductive volume of the layer. © 1997 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2407-2409 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlxGa1−xN/GaN heterostructure field-effect transistors with different Al concentrations (0.15〈x〈0.25) and barrier widths (150 Å〈WB〈350 Å) have been fabricated and characterized. Experimental results were analyzed by using a self-consistent solution of the Schrödinger and Poisson equations with the proper boundary conditions. The total (piezoelectric and spontaneous) polarization has been included as a fitting parameter in the self-consistent calculations. From the analysis of the transistor charge-control experimental data, a linear increase of the polarization field with the Al concentration has been found. Our results indicate that the slope of such dependence, and the magnitude of the total polarization field are lower than the predicted ones using the usually accepted values of the piezoelectric and spontaneous polarization coefficients. © 1999 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 637-639 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of Al contacts on hydrogen-terminated diamond have been characterized. Capacitance–voltage experiments were carried out in order to obtain further insight into the origin of the Schottky contact behavior of Al. Schottky diodes with different areas and peripheries were fabricated and analyzed. We have found that the capacitance of these structures is not proportional to the area but to the length of the contact periphery, supporting the two-dimensional nature of the surface charge layer in hydrogen-terminated diamond. A model based on the negative electron affinity of hydrogen-terminated diamond and the work function of Al is used to explain the in-plane capacitance of the Al Schottky contacts. © 2002 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3442-3444 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The 1/f low-frequency noise characteristics of AlGaN/GaN heterostructure field-effect transistors, grown on sapphire and SiC substrates by molecular beam epitaxy and organometallic vapor phase epitaxy, are reported. The Hooge parameter is deduced taking into account the effect of the contact noise and the noise originating in the ungated regions. A strong dependence between the Hooge parameter and the sheet carrier density is obtained, and it is explained using a model in which mobility fluctuations are produced by dislocations. A Hooge parameter as low as αCH(approximate)8×10−5 is determined for devices grown on SiC substrates. © 2000 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2186-2190 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence and Hall-effect measurements on neutron transmutation doped liquid-phase-epitaxial GaAs layers were performed. The obtained results clearly point out that at least a part of the Ge atoms introduced by transmutation of Ga leave their original lattice site behaving as acceptors. The probable cause of these displacements are the recoils during γ and β emissions from the unstable Ga isotopes.
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  • 9
    Publication Date: 2016-04-12
    Description: We have determined the interfacial properties of tetrahydrofuran (THF) from direct simulation of the vapor-liquid interface. The molecules are modeled using six different molecular models, three of them based on the united-atom approach and the other three based on a coarse-grained (CG) approach. In the first case, THF is modeled using the transferable parameters potential functions approach proposed by Chandrasekhar and Jorgensen [J. Chem. Phys. 77 , 5073 (1982)] and a new parametrization of the TraPPE force fields for cyclic alkanes and ethers [S. J. Keasler et al. , J. Phys. Chem. B 115 , 11234 (2012)]. In both cases, dispersive and coulombic intermolecular interactions are explicitly taken into account. In the second case, THF is modeled as a single sphere, a diatomic molecule, and a ring formed from three Mie monomers according to the SAFT- γ Mie top-down approach [V. Papaioannou et al. , J. Chem. Phys. 140 , 054107 (2014)]. Simulations were performed in the molecular dynamics canonical ensemble and the vapor-liquid surface tension is evaluated from the normal and tangential components of the pressure tensor along the simulation box. In addition to the surface tension, we have also obtained density profiles, coexistence densities, critical temperature, density, and pressure, and interfacial thickness as functions of temperature, paying special attention to the comparison between the estimations obtained from different models and literature experimental data. The simulation results obtained from the three CG models as described by the SAFT- γ Mie approach are able to predict accurately the vapor-liquid phase envelope of THF, in excellent agreement with estimations obtained from TraPPE model and experimental data in the whole range of coexistence. However, Chandrasekhar and Jorgensen model presents significant deviations from experimental results. We also compare the predictions for surface tension as obtained from simulation results for all the models with experimental data. The three CG models predict reasonably well (but only qualitatively) the surface tension of THF, as a function of temperature, from the triple point to the critical temperature. On the other hand, only the TraPPE united-atoms models are able to predict accurately the experimental surface tension of the system in the whole temperature range.
    Print ISSN: 0021-9606
    Electronic ISSN: 1089-7690
    Topics: Chemistry and Pharmacology , Physics
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  • 10
    Publication Date: 2004-08-12
    Print ISSN: 0004-6361
    Electronic ISSN: 1432-0746
    Topics: Physics
    Published by EDP Sciences
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