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  • Copernicus  (52)
  • National Academy of Sciences  (52)
  • American Institute of Physics (AIP)  (44)
  • 1
    Electronic Resource
    Electronic Resource
    Effects of hypophosphite contents and surface treatment on electroplated Co-Ni-P thin films : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5575-5577 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article describes the effects of sodium hypophosphite (hypo) content in cobalt nickel sulfate bath, and the duration of surface treatment prior to electroplating, on the magnetic, structural, and electrical properties of Co-Ni-P thin films. The coercivity of the Co-Ni-P layer can be controlled independently either by hypo content or by surface treatment. Transmission electron microscopy microstructure indicates that the width of grain boundaries of Co-Ni-P films is influenced by hypo in the magnetic bath. The mechanism of the coercivity increase by hypo in the bath is thought to result from magnetostatic or exchange decoupling at phosphorus-rich grain boundaries. Effects of these factors on media noise can be well-explained by the microstructural change of Co-Ni-P layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353655
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  • 2
    Electronic Resource
    Electronic Resource
    Thermoelectric properties of Ag3AuTe2 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5221-5224 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic structure calculations predict Ag3AuTe2 to be a small-band-gap semiconductor. Polycrystalline samples of the pure and doped materials have been synthesized, and the physical properties are reported. Thermoelectric power measurements indicate that pure Ag3AuTe2 is a p-type material with a very large room-temperature Seebeck coefficient of 530 μV/K. The thermal conductivity is very low, and at room temperature, is lower than that of the best thermoelectrics. The transport properties were found to be very sensitive to chemical doping and nonstoichiometry. Although samples made with excess Ag resulted in improved thermoelectric performance at higher temperatures (〉500 K), the large resistivity of these materials makes them noncompetitive with state-of-the-art thermoelectrics. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1316057
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  • 3
    Electronic Resource
    Electronic Resource
    Thermoelectric properties of pure and doped FeMSb (M=V,Nb) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 317-321 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermoelectric properties of the pure and doped half-Heusler compounds FeVSb and FeNbSb are reported. The electrical resistivities are between 0.2 and 20 mΩ cm at room temperature. Thermoelectric power measurements indicate that FeVSb is an n-type material with moderate Seebeck coefficients near −70 μV/K at 300 K. The thermal conductivity at room temperature is large, approximately 0.1 W/cm K, and increases with decreasing temperature. Chemical substitutions, which have a dramatic effect on the transport properties, were performed in an effort to enhance the thermoelectric performance. Band-structure calculations are presented for the pure materials. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371863
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  • 4
    Electronic Resource
    Electronic Resource
    The melting curve of neon at high pressure (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 3835-3838 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have measured the melting curve of neon to 54.5 kbar and 328 K using a diamond-anvil cell. The measured points together with earlier low-pressure data are fitted accurately with a Simon-Glatzel function. Theoretical calculations of the melting curve using lattice dynamics and variational fluid theory with exponential-six potentials fitted to solid isotherm data are in good agreement with the experimental data. The law of corresponding states is tested for the melting curves of He, Ne, and Ar, and is found to be obeyed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.460683
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  • 5
    Electronic Resource
    Electronic Resource
    Erratum: Gabor lens focusing of a proton beam [Rev. Sci. Instrum. 61, 550 (1990)] (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 2707-2707 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141976
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  • 6
    Electronic Resource
    Electronic Resource
    Strong variation of average ion energy in oscillation frequency of sheath potential (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 766-769 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a modern plasma etching device, the plasma sheath potential is usually superposed by an externally driven oscillating voltage to enhance and control the bombarding ion energy. A collisionless particle simulation is used to study the variation of average kinetic energy 〈K〉(νrf) of bombarding ions as a function of a wide range of sheath oscillation frequency νrf (0.1νpi≤νrf≤10νpi, where νpi is the ion plasma frequency). It is found that a resonance phenomenon between the ion transit motion and the sheath oscillation can yield a strongly peaked enhancement of 〈K〉(νrf) near νrf(similar, equals)0.5νpi. Ion species with different mass show the peaks at different νrf. The relative importance of different ion molecules in an ion-enhanced etching process will be sensitive to νrf. This phenomenon may allow a reduction of the undesirable capacitive coupling by optimizing νrf to yield an enhanced 〈K〉 of desired ion species at low applied voltages. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873870
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  • 7
    Electronic Resource
    Electronic Resource
    Structural characterization of zinc stannate thin films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1464-1471 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline thin films of Zn2SnO4 were deposited by rf magnetron sputtering onto glass substrates. Films were characterized by θ–2θ x-ray diffraction and by 119Sn conversion electron Mössbauer spectroscopy. The films were randomly oriented in a cubic spinel structure. Comparison of x-ray diffraction peak intensities with structure-factor-calculated peak intensities confirmed that the films were in an inverse spinel configuration. Mössbauer studies detected two distinct Sn4+ octahedral sites. These distinct sites may be induced by distortions in the lattice associated with equally distinct Zn2+ octahedral sites. A model is suggested to explain that the relatively low electron mobility of Zn2SnO4 may be associated with disorder on the cation octahedral sites. This may disrupt transport between edge-sharing d10s0 electronically configured cations. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1429793
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  • 8
    Electronic Resource
    Electronic Resource
    Density-of-states effective mass and scattering parameter measurements by transport phenomena in thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 462-466 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A novel machine has been developed to measure transport coefficients in the temperature range of 50–350 K of thin films deposited on electrically insulating substrates. The measured coefficients—resistivity, Hall, Seebeck, and Nernst—are applied to solutions of the Boltzmann transport equation to give information about the film's density-of-states effective mass, the Fermi energy level, and an energy-dependent scattering parameter. The machine is designed to eliminate or compensate for simultaneously occurring transport phenomena that would interfere with the desired measured quantity, while allowing for all four coefficients to be measured on the same sample. An average density-of-states effective mass value of 0.29±0.04me was measured on the transparent conductive oxide, cadmium stannate (CTO), over a carrier concentration range of 2–7×1020 cm−3. This effective mass value matched previous results obtained by optical and thermoelectric modeling. The measured scattering parameter indicates that neutral impurities or a mixture of scattering mechanisms may inhibit the transport of carriers in CTO. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150224
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  • 9
    Electronic Resource
    Electronic Resource
    Evaluating the effects of optical and carrier losses in etched-post vertical cavity lasers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5871-5875 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the combined effects of optical scattering loss and surface recombination (or carrier diffusion) on the performance and scalability of etched-post vertical cavity lasers (VCLs). The size dependence of optical losses and threshold gain are determined from pulsed measurements of external quantum efficiency. Deeper etch depths result in a stronger radial dependence of the threshold gain, which quickly increases the threshold current density. With optical loss accounted for, pulsed threshold current density measurements give the extra information needed for evaluating carrier loss. Surface recombination or carrier diffusion also results in threshold current density increases, but scalability is ultimately limited by the ability of the active region to provide enough gain for smaller size, higher optical loss devices. Even with these losses, three-quantum-well VCLs with shallow etches have threshold currents as low as 420 μA. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360588
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  • 10
    Electronic Resource
    Electronic Resource
    Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum-well ridge-waveguide lasers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4479-4487 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured the increase in threshold currents due to lateral carrier diffusion in InGaAs/AlGaAs quantum-well ridge-waveguide laser diodes. The ridge stripes were fabricated by using both in situ monitored pure Cl2 reactive ion etching and selective wet etching to completely eliminate the spreading current in the conductive upper cladding layer while keeping the ridge sidewalls straight. After comparing the threshold data with a theoretical model, the ambipolar diffusion coefficient is found to be 22 cm2/s in the population-inverted InGaAs layer. This model is based on the calculated optical gain curve and the ambipolar carrier transport in the quantum-well and waveguiding layers. The dependence of carrier lifetime on the local carrier concentration is included in the calculation. Moreover, from another set of devices with the portions of the active layer outside the ridge stripes etched away, the surface recombination velocity is found to be around 1–2×105 cm/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357279
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