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  • Springer  (375)
  • American Institute of Physics (AIP)  (51)
  • Wiley-Blackwell  (17)
  • Blackwell Publishing Ltd  (9)
  • 1
    Electronic Resource
    Electronic Resource
    Structural characterization of SimGen strained layer superlattices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4305-4313 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SimGen strained layer superlattice (SLS) structures were grown by molecular beam epitaxy on GexSi1−x buffer layers on 〈100〉 Si substrates to determine the effects of buffer layer composition, SLS thickness ratio, and superlattice periodicity, on the overall quality of these structures. X-ray diffraction methods were used to determine how closely actual periodicities and compositions met targeted values, and to evaluate the quality of these samples. In most instances the as-grown structures matched the targeted values to within 10%, though in some instances deviations of 20–25% in either the period or composition were observed. The quality of the SLS structures was greatly dependent on the composition of the buffer layer on which it was grown. SimGen SLS structures grown on Si- and Ge-rich buffer layers were of much higher quality than SimGem SLSs grown on Ge0.50Si0.50 layers, but the x-ray rocking curves of the SimGen samples indicated that they were far from perfect and contained moderate levels of defects. These results were confirmed by cross sectional transmission electron microscopy, which showed that the SimGem structures contained significant numbers of dislocations and that the layers were nonuniform in thickness and wavy in appearance. SimGen structures, however, displayed fewer defects but some dislocations and nonparallelism of layers were still observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350812
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical resistivity of Co-Ni-Pd and Co-Pd alloys : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5831-5833 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three series of ferromagnetic alloys have been made: Co100−xPdx, Co25Ni75−yPdy and Co5−zNizPd95. The electrical resistivity ρ of these alloys was measured from 4 to 300 K. Their high field (H(approximately-greater-than)2 T) susceptibility χHF was obtained with superconducting quantum interference device measurements at 5 K. Comparing the residual resistivity ρ0 of Co-Ni and Co-Pd, it is found that the spin-up resistivity ρ↑ of Co-Ni follows the Nordheim's rule, while that of Co-Pd peaks at x=85. This indicates the spin-up d band of Co-Pd is not full for all the x values. Also, χHF data reveal the same tendency of the spin-up band. Based on the deviation from Matthiessen's rule of the two-current model, we estimate α=ρ0↓ /ρ0↑(approximately-equal-to)2 for the dilute PdCo alloy, where ρ0=ρ0↓ ρ0↑/(ρ0↑+ρ0↓ ), from the residual resistivity of the ternary Co5−zNizPd95 alloy and from the temperature dependence of ρ(T) of the binary Co5Pd95 alloy
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350125
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  • 3
    Electronic Resource
    Electronic Resource
    Rare-earth promoters of semiconductor oxidation: The case of GaAs(110)/Yb (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4283-4290 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synchrotron radiation photoemission studies show that thin Yb overlayers (0.3–4.1) monolayers) enhance the oxidation of GaAs(110) surfaces. The magnitude of the promotion effect varies as a function of Yb coverage. The oxidation reaction products involve several nonequivalent oxidation states of As and Ga. The specific catalytic activity of the pure divalent Yb overlayers in promoting GaAs oxidation appears lower than that of Sm overlayers containing both Sm2+ and Sm3+ species. The spectroscopic signature of the oxidation reaction products, instead, is compellingly similar for the two rare-earth promoters. We propose that the oxidation promotion mechanism is related, in both cases, to the decomposition of metal/semiconductor interface reaction products upon exposure to oxygen, and that the rare-earth atomic valence has only a limited influence on the promotion mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344943
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetic and transport properties of Fe-Mo and Fe-W alloys : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6402-6404 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two series of polycrystalline Fe100−xMox and Fe100−xWx (0≤x≤10 at. %) alloys were made. In order to preserve a single bcc phase, alloy samples, depending on the x value, were quenched from various temperatures TQ. In general, TQ is higher than 850 °C, and increases with x. X-ray diffraction was used to check the phase and the lattice constant of each sample. Magnetoresistance, electrical resistivity, and magnetic moment were measured at 4 K. Those experimental data are analyzed for Fe-Cr, Fe-Mo, and Fe-W alloys, especially the effects of moving down along the VIB column from Cr to W on the transport and magnetic properties. Comparison is made with Co-based alloys, where the changes of the spin-up resistivity from Co-Ni to Co-Pd and from Co-Pd to Co-Pt are due to the increase in s-s scattering. For Fe-based alloys, however, because the spin-down d band is partially empty (the roles of spin-up and -down bands are reversed), the spin-down resistivity is from s-d scattering instead.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352610
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  • 5
    Electronic Resource
    Electronic Resource
    Magnetic properties of FeAlMnC steels (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4835-4837 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of high yielding strength (90–180 ksi) and high-elongation (30%–45%) FeAlMnC steels have been made. The magnetic, microstructural, and thermal expansion properties of these steels have been studied. Basically, their magnetic transitions on cooling can be classified into three groups according to their microstructures: (i) For fully austenitic (γ) steels, the transition is from paramagnetic to antiferromagnetic. TN is lowered with the addition of Al; (ii) for α+γ phase steel (volume fraction of α≤0.3%), the transition is from superparamagnetic to antiferromagnetic, and (iii) for the mixed phase steel, whose α phase has percolated, it is ferromagnetic with TC(approximately-equal-to)200 C. The susceptibility of austenitic steels is low. Their nonmagnetic properties are comparable to commercial 304 or 25/12 stainless steel. An Invar-like property in the thermal expansion was observed around TN. Their volume magnetostriction values are in the range of 10−6–10−5.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346053
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  • 6
    Electronic Resource
    Electronic Resource
    Structural evolution within the one-phase region of a three-component microemulsion system: Water–n-decane–sodium-bis-ethylhexylsulfosuccinate (AOT) (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 1907-1918 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The continuous inversion from a water-in-oil (w/o) microemulsion at low temperatures to an oil-in-water (o/w) microemulsion at higher temperatures within the one-phase channel of water (0.6% NaCl)–n-decane–AOT microemulsion system is investigated by small angle neutron scattering (SANS). At constant AOT (surfactant) weight fraction γ of 12%, the structural evolution as a function of temperature takes place in different forms as the oil-to-water weight fraction α is varied from 15 to 90 %. At low o-w weight fractions (α=15 and 20 %) the microemulsions transform from a water-internal, oil-continuous structure at lower temperatures to an oil-internal, water-continuous droplet structure at higher temperatures jumping across an intermediate region of a lamellar phase (Lα). However, at higher o-w weight fractions (α=80 and 90 %) the evolution goes through a stage of percolation of the water droplets first into extended water clusters, then the structural inversion takes place probably through a transition of these water clusters into an entangled tubular structure. At equal oil-to-water volume ration (α=40%), the structure can be described as bicontinuous at both low and high temperatures. In this case we are able to extract two lengths characterizing the structure from SANS data using different models for the scattering length density fluctuation correlation function of a bicontinuous microemulsion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459068
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  • 7
    Electronic Resource
    Electronic Resource
    Mechanisms for the improved stability of C54–TiSi2 on (001)Si by the addition of N2 to Ar during Ti sputtering (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1779-1783 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Addition of N2 to Ar during Ti sputtering has been found to improve the thermal stability of TiSi2. For samples sputtered with a mixture of Ar and N2, TiSi2 was found to be stable after 1050 °C, 30 s annealing. Furthermore, the phase transformation temperature from the C49 to C54 phase was not affected with the addition of a small amount of nitrogen. The stuffing of grain boundaries of TiSi2 and TiN/TiSi2 interfaces by nitrogen atoms is thought to retard the transport of Si and Ti atoms. In addition, titanium nitride particles embedded in TiSi2 near the TiN/TiSi2 interface may also protect the TiSi2 films from plastic deformation and retard the grain growth during high temperature annealing. Smaller average grain size of C54–TiSi2 in samples prepared with the addition of N2 to Ar during Ti sputtering than that in pure Ti samples is also beneficial in enhancing the thermal stability. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385577
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  • 8
    Electronic Resource
    Electronic Resource
    Magnetism in some UCo1/3T2/3Al solid solutions (T=transition metal) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6812-6814 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the magnetic properties of UCo1/3T2/3Al (T=Ru, Rh, Pt) solid solutions which form in the hexagonal ZrNiAl structure. We performed neutron diffraction and bulk magnetization studies. All three solid solutions exhibit long-range magnetic order at low temperatures. Bulk magnetization studies indicate a ferromagnetic ground state for UCo1/3Ru2/3Al, UCo1/3Rh2/3Al, and UCo1/3Pt2/3Al below 42, 41, and 27 K, respectively. At 4.2 K, the spontaneous moment ranges from ∼0.15 μB/U-atom (UCo1/3Ru2/3Al) to ∼0.49μB/U-atom (UCo1/3Pt2/3Al). Below TC, we find additional weak magnetic contributions in the neutron diffraction data, and our refinement is consistent with magnetic moments along the c axis. The magnitudes of the moments are in good agreement with the spontaneous moments determined from bulk studies. The results are discussed in terms of f–d hybridization, which is modified by changes in the d band occupation and preferential occupation of the transition metals within the lattice. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372850
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  • 9
    Electronic Resource
    Electronic Resource
    Field inhomogeneity effects on photoreflectance spectra of ZnSe/GaAs (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3789-3792 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance measurements from ZnSe epilayers of different thicknesses were carried out. In photoreflectance spectra, the exciton line shape "rotation" is observed to be much slower than that in the reflectance spectra by increasing the epilayer thicknesses. To analyze the exciton line shape rotation quantitatively, the photoreflectance spectra were calculated considering the built-in electric field inhomogeneity effects near the interface as well as the interference effects. Calculated line shapes of the photoreflectance spectra show a good agreement with the observations. Our results imply that inhomogeneity effects of the interface built-in electric field plays an important role in the spectral rotation in photoreflectance. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372415
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  • 10
    Electronic Resource
    Electronic Resource
    Electronic properties of UIrGe in high magnetic fields (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7186-7188 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: UIrGe crystallizes in the orthorhombic TiNiSi structure and exhibits a large magnetic anisotropy. Here, we present the results of magnetoresistance and specific-heat studies of single-crystalline UIrGe in magnetic fields up to 18 T applied along the principal axes. The phase boundaries of the zero-field antiferromagnetic phase (TN(approximate)14.1 K) are established, and we find evidence of a field-induced phase above 12.5 T at 2.1 K and 14 T at 2.5 K for magnetic fields applied along the b and c axis, respectively. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357847
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